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10A01

Description
10 A, 50 V, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size31KB,2 Pages
ManufacturerEIC [EIC discrete Semiconductors]
Environmental Compliance
Download Datasheet Parametric Compare View All

10A01 Overview

10 A, 50 V, SILICON, RECTIFIER DIODE

10A01 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerEIC [EIC discrete Semiconductors]
Reach Compliance Codecompli
ECCN codeEAR99
applicationGENERAL PURPOSE
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1 V
JESD-30 codeO-PALF-W2
Maximum non-repetitive peak forward current400 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Maximum output current10 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum repetitive peak reverse voltage50 V
Maximum reverse current10 µA
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
10A01-10A07
PRV : 50 - 1000 Volts
Io : 10 Amperes
FEATURES :
* Diffused Junction
* High current capability and Low Forward
Voltage Drop
* Surge Overload Rating to 600A Peak
* Low Reverse Leakage Current
* Pb / RoHS Free
SILICON RECTIFIER DIODES
D6
1.00 (25.4)
MIN.
0.360 (9.1)
0.340 (8.6)
0.360 (9.1)
0.340 (8.6)
MECHANICAL DATA :
* Case : molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 2.049 grams
0.052 (1.32)
0.048 (1.22)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
°
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Average Rectified Output Current (Note 1) Ta = 50°C
Non-Repetitive Peak Forward Surge Current 8.3 ms
Single half sine wave superimposed on rated load
(JEDEC Method)
Maximum Forward Voltage at I
F
= 10 Amps.
Maximum DC Reverse Current
at rated DC Blocking Voltage
Thermal Resistance
Operating and Storage Temperature Range
Notes
:
SYMBOL
10A01 10A02 10A03 10A04 10A05 10A06 10A07
UNIT
V
RRM
V
RMS
V
DC
I
O
I
FSM
V
F
I
R
I
R(H)
Cj
R
θJC
T
J
, T
STG
150
0.8
- 65 to + 150
50
35
50
100
70
100
200
140
200
400
280
400
10
600
1.3
10
100
80
600
420
600
800
560
800
1000
700
1000
V
V
V
A
A
V
µA
µA
pF
°C/W
°C
Ta = 25
°C
Ta = 100
°C
Typical Junction Capacitance (Note 2)
(1) Leads maintained at ambient temperature at a distance of 9.5 mm fro, the case.
(2) Measured at 1.0 MHz and applied reverse volage of 4.0V DC.
Page 1 of 2
Rev. 01 : October 27, 2005

10A01 Related Products

10A01 10A05 10A07 10A04 10A02 10A06
Description 10 A, 50 V, SILICON, RECTIFIER DIODE 10 A, 50 V, SILICON, RECTIFIER DIODE 10 A, 50 V, SILICON, RECTIFIER DIODE 10 A, 50 V, SILICON, RECTIFIER DIODE 10 A, 50 V, SILICON, RECTIFIER DIODE 10 A, 50 V, SILICON, RECTIFIER DIODE
Is it lead-free? Lead free - - Lead free Lead free Lead free
Is it Rohs certified? conform to - - conform to conform to conform to
Maker EIC [EIC discrete Semiconductors] - - EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors]
Reach Compliance Code compli - - compli compli compli
application GENERAL PURPOSE - - GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE
Shell connection ISOLATED - - ISOLATED ISOLATED ISOLATED
Configuration SINGLE - - SINGLE SINGLE SINGLE
Diode component materials SILICON - - SILICON SILICON SILICON
Diode type RECTIFIER DIODE - - RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1 V - - 1 V 1 V 1 V
JESD-30 code O-PALF-W2 - - O-PALF-W2 O-PALF-W2 O-PALF-W2
Maximum non-repetitive peak forward current 400 A - - 400 A 400 A 400 A
Number of components 1 - - 1 1 1
Phase 1 - - 1 1 1
Number of terminals 2 - - 2 2 2
Maximum operating temperature 150 °C - - 150 °C 150 °C 150 °C
Minimum operating temperature -65 °C - - -65 °C -65 °C -65 °C
Maximum output current 10 A - - 10 A 10 A 10 A
Package body material PLASTIC/EPOXY - - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND - - ROUND ROUND ROUND
Package form LONG FORM - - LONG FORM LONG FORM LONG FORM
Peak Reflow Temperature (Celsius) NOT SPECIFIED - - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Maximum repetitive peak reverse voltage 50 V - - 400 V 100 V 800 V
Maximum reverse current 10 µA - - 10 µA 10 µA 10 µA
surface mount NO - - NO NO NO
Terminal form WIRE - - WIRE WIRE WIRE
Terminal location AXIAL - - AXIAL AXIAL AXIAL
Maximum time at peak reflow temperature NOT SPECIFIED - - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
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