10A05 datasheet, PDF - EEWORLD Datasheet

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10A05: Description10 A, 50 V, SILICON, RECTIFIER DIODE; Categorysemiconductor Discrete semiconductor; File Size31KB，2 Pages; ManufacturerEIC [EIC discrete Semiconductors]

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10A05 Overview

10 A, 50 V, SILICON, RECTIFIER DIODE

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10A01-10A07

PRV : 50 - 1000 Volts

Io : 10 Amperes

FEATURES :

* Diffused Junction

* High current capability and Low Forward

Voltage Drop

* Surge Overload Rating to 600A Peak

* Low Reverse Leakage Current

* Pb / RoHS Free

SILICON RECTIFIER DIODES

1.00 (25.4)

MIN.

0.360 (9.1)

0.340 (8.6)

0.360 (9.1)

0.340 (8.6)

MECHANICAL DATA :

* Case : molded plastic

* Epoxy : UL94V-O rate flame retardant

* Lead : Axial lead solderable per MIL-STD-202,

Method 208 guaranteed

* Polarity : Color band denotes cathode end

* Mounting position : Any

* Weight : 2.049 grams

0.052 (1.32)

0.048 (1.22)

1.00 (25.4)

MIN.

Dimensions in inches and ( millimeters )

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25

C ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

RATING

Maximum Repetitive Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Average Rectified Output Current (Note 1) Ta = 50°C

Non-Repetitive Peak Forward Surge Current 8.3 ms

Single half sine wave superimposed on rated load

(JEDEC Method)

Maximum Forward Voltage at I

= 10 Amps.

Maximum DC Reverse Current

at rated DC Blocking Voltage

Thermal Resistance

Operating and Storage Temperature Range

Notes

SYMBOL

10A01 10A02 10A03 10A04 10A05 10A06 10A07

UNIT

RRM

RMS

FSM

R(H)

θJC

, T

STG

150

0.8

- 65 to + 150

100

200

140

200

400

280

400

600

1.3

100

600

420

600

800

560

800

1000

700

1000

µA

°C/W

°C

Ta = 25

°C

Ta = 100

°C

Typical Junction Capacitance (Note 2)

(1) Leads maintained at ambient temperature at a distance of 9.5 mm fro, the case.

(2) Measured at 1.0 MHz and applied reverse volage of 4.0V DC.

Page 1 of 2

Rev. 01 : October 27, 2005

10A05 Related Products

	10A05	10A01	10A07	10A04	10A02	10A06
Description	10 A, 50 V, SILICON, RECTIFIER DIODE	10 A, 50 V, SILICON, RECTIFIER DIODE	10 A, 50 V, SILICON, RECTIFIER DIODE	10 A, 50 V, SILICON, RECTIFIER DIODE	10 A, 50 V, SILICON, RECTIFIER DIODE	10 A, 50 V, SILICON, RECTIFIER DIODE
Is it lead-free?	-	Lead free	-	Lead free	Lead free	Lead free
Is it Rohs certified?	-	conform to	-	conform to	conform to	conform to
Maker	-	EIC [EIC discrete Semiconductors]	-	EIC [EIC discrete Semiconductors]	EIC [EIC discrete Semiconductors]	EIC [EIC discrete Semiconductors]
Reach Compliance Code	-	compli	-	compli	compli	compli
application	-	GENERAL PURPOSE	-	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE
Shell connection	-	ISOLATED	-	ISOLATED	ISOLATED	ISOLATED
Configuration	-	SINGLE	-	SINGLE	SINGLE	SINGLE
Diode component materials	-	SILICON	-	SILICON	SILICON	SILICON
Diode type	-	RECTIFIER DIODE	-	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	-	1 V	-	1 V	1 V	1 V
JESD-30 code	-	O-PALF-W2	-	O-PALF-W2	O-PALF-W2	O-PALF-W2
Maximum non-repetitive peak forward current	-	400 A	-	400 A	400 A	400 A
Number of components	-	1	-	1	1	1
Phase	-	1	-	1	1	1
Number of terminals	-	2	-	2	2	2
Maximum operating temperature	-	150 °C	-	150 °C	150 °C	150 °C
Minimum operating temperature	-	-65 °C	-	-65 °C	-65 °C	-65 °C
Maximum output current	-	10 A	-	10 A	10 A	10 A
Package body material	-	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	-	ROUND	-	ROUND	ROUND	ROUND
Package form	-	LONG FORM	-	LONG FORM	LONG FORM	LONG FORM
Peak Reflow Temperature (Celsius)	-	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Maximum repetitive peak reverse voltage	-	50 V	-	400 V	100 V	800 V
Maximum reverse current	-	10 µA	-	10 µA	10 µA	10 µA
surface mount	-	NO	-	NO	NO	NO
Terminal form	-	WIRE	-	WIRE	WIRE	WIRE
Terminal location	-	AXIAL	-	AXIAL	AXIAL	AXIAL
Maximum time at peak reflow temperature	-	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED

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