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56DN03

Description
6400 A, 200 V, SILICON, RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size119KB,11 Pages
ManufacturerEUPEC [eupec GmbH]
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56DN03 Overview

6400 A, 200 V, SILICON, RECTIFIER DIODE

Technische Information / Technical Information
Netz Gleichrichterdiode
Rectifier Diode
56 DN 02...06
T
vj
= - 40°C...T
vj max
V
RRM
N
Vorläufige Daten
Preliminary data
200
400
600
450
650
10050
6400
81000
70000
32.800
24.500
V
V
V
V
A
A
A
A
A²s*10
3
A²s*10
3
Elektrische Eigenschaften / Electrical properties
Höchstzulässige Werte / Maximum rated values
Periodische Spitzensperrspannung
repetitive peak forward reverse voltage
Stoßspitzensperrspannung
non-repetitive peak reverse voltage
Durchlaßstrom-Grenzeffektivwert
RMS forward current
Dauergrenzstrom
mean forward current
Stoßstrom-Grenzwert
surge foward current
Grenzlastintegral
I²t-value
T
C
= 126 °C
T
vj
= 25°C, tp = 10 ms
T
vj
= T
vj max
, tp = 10 ms
T
vj
= 25°C, tp = 10ms
T
vj
= T
vj max
, tp = 10ms
T
vj
= + 25°C...T
vj max
V
RSM
250
I
FRMSM
I
FAVM
I
FSM
I²t
Charakteristische Werte / Characteristic values
Durchlaßspannung
forward voltage
Schleusenspannung
threshold voltage
Ersatzwiderstand
forward slope resistance
T
vj
= T
vj max
,
T
vj
= T
vj max
T
vj
= T
vj max
i
F
=
10 kA
v
F
V
(TO)
r
T
max.
1,15
0,7
0,04
V
V
mΩ
T
vj
= T
vj max
Durchlaßkennlinie
on-state voltage
A=
B=
C=
D=
T
vj
= 25 °C
0,79326
1,6157E-05
-8,0905E-03
3,9268E-03
max.
100
mA
v
T
=
A
+
B
i
T
+
C
Ln
(
i
T
+
1)
+
D
i
T
Sperrstrom
reverse current
T
vj
= T
vj max
, v
R
= V
RRM
4,1720E-01
2,0017E-05
7,4408E-03
4,1902E-03
i
R
Thermische Eigenschaften / Thermal properties
Innerer Wärmewiderstand
thermal resitance, junction to case
Kühlfläche / cooling surface
R
thJC
beidseitig / two-sided,Θ=180°sin
beidseitig / two-sided, DC
Anode / anode,
Θ
=180°sin
Anode / anode, DC
Kathode / cathode,
Θ
=180°sin
Kathode / cathode, DC
Übergangs- Wärmewiderstand
thermal resitance, case to heatsink
Höchstzulässige Sperrschichttemperatur
max. junction temperature
Betriebstemperatur
operating temperature
Lagertemperatur
storage temperature
Kühlfläche / cooling surface
beidseitig / two-sided
einseitig / single-sided
R
thCK
max.
max.
T
vj max
T
c op
T
stg
-40...+180
-40...+180
0,0025
0,005
180
°C/W
°C/W
°C
°C
°C
max.
max.
max.
max.
max.
max.
0,0062
0,0055
0,0107
0,0100
0,0127
0,0121
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
SZ-M / 11.11.98 K.-A.Rüther
A119/98
Seite/page 1

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Description 6400 A, 200 V, SILICON, RECTIFIER DIODE 6400 A, 200 V, SILICON, RECTIFIER DIODE 6400 A, 200 V, SILICON, RECTIFIER DIODE

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