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BCX68-16TA

Description
Small Signal Bipolar Transistor, 1A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon
CategoryDiscrete semiconductor    The transistor   
File Size2MB,3 Pages
ManufacturerZetex Semiconductors
Websitehttp://www.zetex.com/
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BCX68-16TA Overview

Small Signal Bipolar Transistor, 1A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon

BCX68-16TA Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerZetex Semiconductors
package instructionSMALL OUTLINE, R-PSSO-F3
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)1 A
Collector-based maximum capacity25 pF
Collector-emitter maximum voltage20 V
ConfigurationSINGLE
Minimum DC current gain (hFE)100
JESD-30 codeR-PSSO-F3
JESD-609 codee0
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)235
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formFLAT
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
VCEsat-Max0.5 V
SOT89 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 3 – FEBRUARY 2007
7
FEATURES
* High gain and low saturation voltages
COMPLEMENTARY TYPE –
PARTMARKING DETAIL –
BCX69
BCX68
– CE
BCX68-16 – CC
BCX68-25 – CD
BCX68
C
E
C
B
SOT89
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
VALUE
25
20
5
2
1
1
-65 to +150
UNIT
V
V
V
A
A
W
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Collector-Base
Breakdown voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter Turn-On
Voltage
Static Forward Current
Transfer Ratio
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(on)
50
85
60
BCX68-16 100
BCX68-25 160
f
T
C
obo
100
25
h
FE
MIN.
25
20
5
0.1
10
10
0.5
1.0
TYP.
MAX. UNIT
V
V
V
µA
µA
µA
V
V
CONDITIONS.
I
C
=100µA
I
C
=10mA
I
E
=100µA
V
CB
=25V
V
CB
=25V, T
a
=150°C
V
EB
=5V
I
C
=1A, I
B
=100mA*
I
C
=1A, V
CE
=1V*
I
C
I
C
I
C
I
C
I
C
MHz
pF
=5mA, V
CE
=10V
=500mA, V
CE
=1V
=1A, V
CE
=1V*
=500mA, V
CE
=1V*
=500mA, V
CE
=1V
375
250
250
400
Transition Frequency
Output Capacitance
I
C
=100mA, V
CE
=5V,
f=100MHz
V
CB
=10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle
≤2%
For typical characteristics graphs see FMMT449 datasheet.
3 - 36

BCX68-16TA Related Products

BCX68-16TA BCX68TA BCX68-25TA BCX68-25TC UBCX68-25
Description Small Signal Bipolar Transistor, 1A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon Small Signal Bipolar Transistor, 1A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon Small Signal Bipolar Transistor, 1A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon Transistor, Small Signal Bipolar Transistor, 1A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon
Is it Rohs certified? incompatible conform to conform to conform to conform to
package instruction SMALL OUTLINE, R-PSSO-F3 SMALL OUTLINE, R-PSSO-F3 SMALL OUTLINE, R-PSSO-F3 , SMALL OUTLINE, R-PSSO-F3
Reach Compliance Code unknown compliant compliant compliant compliant
JESD-609 code e0 e3 e3 e3 e3
Humidity sensitivity level 1 1 1 1 1
Terminal surface Tin/Lead (Sn/Pb) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn)
Maker Zetex Semiconductors - Zetex Semiconductors Zetex Semiconductors Zetex Semiconductors
ECCN code EAR99 EAR99 EAR99 - EAR99
Shell connection COLLECTOR COLLECTOR COLLECTOR - COLLECTOR
Maximum collector current (IC) 1 A 1 A 1 A - 1 A
Collector-based maximum capacity 25 pF 25 pF 25 pF - 25 pF
Collector-emitter maximum voltage 20 V 20 V 20 V - 20 V
Configuration SINGLE SINGLE SINGLE - SINGLE
Minimum DC current gain (hFE) 100 85 160 - 160
JESD-30 code R-PSSO-F3 R-PSSO-F3 R-PSSO-F3 - R-PSSO-F3
Number of components 1 1 1 - 1
Number of terminals 3 3 3 - 3
Maximum operating temperature 150 °C 150 °C 150 °C - 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR - RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE - SMALL OUTLINE
Peak Reflow Temperature (Celsius) 235 260 260 - 260
Polarity/channel type NPN NPN NPN - NPN
Certification status Not Qualified Not Qualified Not Qualified - Not Qualified
surface mount YES YES YES - YES
Terminal form FLAT FLAT FLAT - FLAT
Terminal location SINGLE SINGLE SINGLE - SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED 40 40 - 10
transistor applications SWITCHING SWITCHING SWITCHING - SWITCHING
Transistor component materials SILICON SILICON SILICON - SILICON
Nominal transition frequency (fT) 100 MHz 100 MHz 100 MHz - 100 MHz
VCEsat-Max 0.5 V 0.5 V 0.5 V - 0.5 V

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