UNISONIC TECHNOLOGIES CO., LTD
2SB1260
POWER TRANSISTOR
DESCRIPTION
The UTC
2SB1260
is a epitaxial planar type PNP silicon
transistor.
PNP SILICON TRANSISTOR
FEATURES
* High breakdown voltage and high current.
*
BV
CEO
= -80V, I
C
= -1A
* Good h
FE
linearity.
* Low V
CE(SAT)
Lead-free:
2SB1260L
Halogen-free: 2SB1260G
ORDERING INFORMATION
Normal
2SB1260-x-AB3-R
2SB1260-x-TN3-R
Ordering Number
Lead Free
2SB1260L-x-AB3-R
2SB1260L-x-TN3-R
Halogen Free
2SB1260G-x-AB3-R
2SB1260G-x-TN3-R
Package
SOT-89
TO-252
Pin Assignment
1
2
3
B
C
E
B
C
E
Packing
Tape Reel
Tape Reel
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Copyright © 2008 Unisonic Technologies Co., Ltd
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QW-R208-017,E
2SB1260
ABSOLUATE MAXIUM RATINGS
(Ta = 25℃)
PARAMETER
Collector -Base Voltage
Collector -Emitter Voltage
Emitter -Base Voltage
Peak Collector Current
(
single pulse, Pw=100ms)
DC Collector Current
Power Dissipation
SOT-89
TO-252
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
D
PNP SILICON TRANSISTOR
RATINGS
-80
-80
-5
-2
-1
0.5
1.9
+150
-40 ~ +150
UNIT
V
V
V
A
A
W
W
℃
℃
Junction Temperature
T
J
Storage Temperature
T
STG
Note 1. Printed circuit board,1.7mm thick, collector copper plating 100mm
2
or larger.
2. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(Ta= 25℃, unless otherwise specified)
PARAMETER
SYMBOL
Collector Base Breakdown Voltage
BV
CBO
Collector Emitter Breakdown Voltage
BV
CEO
Emitter Base Breakdown Voltage
BV
EBO
Collector Cut-Off Current
I
CBO
Emitter Cut-Off Current
I
EBO
DC Current Gain(Note 1)
h
FE
Collector-Emitter Saturation Voltage
V
CE(SAT)
Transition Frequency
f
T
Output Capacitance
Cob
Note 1: Pulse test: P
W
<300μs, Duty Cycle<2%
TEST CONDITIONS
I
C
= -50μA
I
C
= -1mA
I
E
= -50μA
V
CB
=-60V
V
EB
=-4V
V
CE
=-3V, I
OUT
=-0.1A
I
C
=-500mA, I
B
=-50mA
V
CE
= -5V, I
E
=50mA, f=30MHz
V
CB
=-10V, I
E
=0, f=1MHz
MIN
-80
-80
-5
TYP
MAX
UNIT
V
V
V
μA
μA
V
MHz
pF
82
100
25
-1
-1
390
-0.4
CLASSIFICATION OF h
FE
RANK
RANGE
P
82 ~ 180
Q
120 ~ 270
R
180 ~ 390
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www.unisonic.com.tw
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QW-R208-017,E
■
2SB1260
Transition Frequency, f
T
(MHz)
DC Current Gain, h
FE
Collector Current, Ic(mA)
TYPICAL CHARACTERICS
UNISONIC TECHNOLOGIES CO., LTD
Collector Saturation Voltage, V
CE(SAT)
( V)
Collector Current, Ic(mA)
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Collector Output Capacitance, Cob (pF)
PNP SILICON TRANSISTOR
QW-R208-017,E
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2SB1260
TYPICAL CHARACTERICS(Cont.)
PNP SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R208-017,E
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