KSB1017
KSB1017
Power Amplifier Applications
• Complement to KSD1408
1
TO-220F
2.Collector
3.Emitter
1.Base
PNP Silicon Epitaxial Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Dissipation ( T
C
=25°C)
Junction Temperature
Storage Temperature
Parameter
Value
- 80
- 80
-5
-4
- 0.4
25
150
- 55 ~ 150
Units
V
V
V
A
A
W
°C
°C
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
BV
CEO
I
CBO
I
EBO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(on)
f
T
C
ob
Parameter
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter ON Voltage
Current Gain Bandwidth Product
Output Capacitance
Test Condition
I
C
= - 50mA, I
B
= 0
V
CB
= - 80V, I
E
= 0
V
EB
= - 5V, I
C
= 0
V
CE
= - 5V, I
C
= - 0.5A
V
CE
= - 5V, I
C
= - 3A
I
C
= - 3A, I
B
= - 0.3A
V
CE
= - 5V, I
C
= - 3A
V
CE
= - 5V, I
C
= - 0.5A
V
CB
= - 10V, f = 1MHz
40
15
-1
-1
9
130
Min.
-80
Typ.
Max.
- 30
- 100
240
- 1.7
- 1.5
V
V
MHz
pF
Units
V
µA
µA
h
FE
Classification
Classification
h
FE1
R
40 ~ 80
O
70 ~ 140
Y
120 ~ 240
©2000 Fairchild Semiconductor International
Rev. A, February 2000
KSB1017
Typical Characteristics
-4.0
I
B
= -140mA
I
B
= -180mA
I
B
= -120mA
I
B
= -100mA
I
B
= -80mA
1000
V
CE
= -5V
I
C
[A], COLLECTOR CURRENT
-3.2
I
B
= -160mA
h
FE
, DC CURRENT GAIN
-5
I
B
= -60mA
100
-2.4
I
B
= -40mA
-1.6
I
B
= -20mA
10
-0.8
I
B
= 0A
-0.0
-0
-1
-2
-3
-4
1
-1E-3
-0.01
-0.1
-1
-10
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
C
[A], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
-10
-4
I
C
=10I
B
V
CE
= -5V
V
CE
(sat)[V], SATURATION VOLTAGE
I
C
[A], COLLECTOR CURRENT
-3
-1
-2
-0.1
-1
-0.01
-1E-3
-0.01
-0.1
-1
-10
-0
-0.0
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
-1.4
-1.6
I
C
[A], COLLECTOR CURRENT
V
BE
[V], BASE-EMITTER VOLTAGE
Figure 3. Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
-100
40
35
I
C
[A], COLLECTOR CURRENT
P
D
[W], POWER DISSIPATION
-1000
30
-10
I
C
(max). (Pulse)
s
1m
25
I
C
(max). (DC)
s
0m
10
1s
C
D
10ms
20
15
-1
10
V
CEO
MAX.
5
-0.1
-1
-10
-100
0
0
25
50
o
75
100
125
150
175
200
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
T
C
[ C], CASE TEMPERATURE
Figure 5. Safe Operating Area
Figure 6. Power Derating
©2000 Fairchild Semiconductor International
Rev. A, February 2000
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not intended to be an exhaustive list of all such trademarks.
ACEx™
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E
2
CMOS™
FACT™
FACT Quiet Series™
FAST
®
FASTr™
GTO™
DISCLAIMER
HiSeC™
ISOPLANAR™
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POP™
PowerTrench
®
QFET™
QS™
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SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
VCX™
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PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
INTERNATIONAL.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2000 Fairchild Semiconductor International
Rev. E
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