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2SA1714

Description
3A, 100V, PNP, Si, POWER TRANSISTOR, TO-126
CategoryDiscrete semiconductor    The transistor   
File Size258KB,8 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
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2SA1714 Overview

3A, 100V, PNP, Si, POWER TRANSISTOR, TO-126

2SA1714 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codecompli
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)3 A
Collector-emitter maximum voltage100 V
ConfigurationDARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE)1000
JEDEC-95 codeTO-126
JESD-30 codeR-PSFM-T3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)225
Polarity/channel typePNP
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
To our customers,
Old Company Name in Catalogs and Other Documents
On April 1
st
, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas
Electronics Corporation
took over all the business of both
companies.
Therefore, although the old company name remains in this document, it is a valid
Renesas
Electronics document. We appreciate your understanding.
Renesas Electronics website: http://www.renesas.com
April 1
st
, 2010
Renesas Electronics Corporation
Issued by:
Renesas Electronics Corporation
(http://www.renesas.com)
Send any inquiries to http://www.renesas.com/inquiry.

2SA1714 Related Products

2SA1714 2SA1714K-AZ 2SA1714-L 2SA1714-K 2SA1714-M
Description 3A, 100V, PNP, Si, POWER TRANSISTOR, TO-126 TRANSISTOR,BJT,DARLINGTON,PNP,100V V(BR)CEO,3A I(C),TO-126 3A, 100V, PNP, Si, POWER TRANSISTOR, TO-126 3A, 100V, PNP, Si, POWER TRANSISTOR, TO-126 3A, 100V, PNP, Si, POWER TRANSISTOR, TO-126
Reach Compliance Code compli compli unknow unknow unknow
Maximum collector current (IC) 3 A 3 A 3 A 3 A 3 A
Configuration DARLINGTON WITH BUILT-IN DIODE AND RESISTOR DARLINGTON DARLINGTON WITH BUILT-IN DIODE AND RESISTOR DARLINGTON WITH BUILT-IN DIODE AND RESISTOR DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE) 1000 8000 4000 8000 2000
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C
Polarity/channel type PNP PNP PNP PNP PNP
surface mount NO NO NO NO NO
Base Number Matches 1 1 1 1 1
package instruction FLANGE MOUNT, R-PSFM-T3 - FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
ECCN code EAR99 - EAR99 EAR99 EAR99
Shell connection COLLECTOR - COLLECTOR COLLECTOR COLLECTOR
Collector-emitter maximum voltage 100 V - 100 V 100 V 100 V
JEDEC-95 code TO-126 - TO-126 TO-126 TO-126
JESD-30 code R-PSFM-T3 - R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
Number of components 1 - 1 1 1
Number of terminals 3 - 3 3 3
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR - RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT - FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Certification status Not Qualified - Not Qualified Not Qualified Not Qualified
Terminal form THROUGH-HOLE - THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE - SINGLE SINGLE SINGLE
transistor applications SWITCHING - SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON - SILICON SILICON SILICON
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