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DB21413

Description
2 A, 40 V, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size404KB,4 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Environmental Compliance
Download Datasheet Parametric View All

DB21413 Overview

2 A, 40 V, SILICON, RECTIFIER DIODE

DB21413 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionHALOGEN FREE AND ROHS COMPLIANT, SMINI2-F4-B, 2 PIN
Contacts2
Manufacturer packaging codeSMINI2-F4-B
Reach Compliance Codeunknow
ECCN codeEAR99
applicationGENERAL PURPOSE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.53 V
JESD-30 codeR-PDSO-F2
Maximum non-repetitive peak forward current30 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Maximum output current2 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage40 V
surface mountYES
technologySCHOTTKY
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
This product complies with the RoHS Directive (EU 2002/95/EC).
DB21413
Silicon epitaxial planar type
For rectification
Features
Package
Code
SMini2-F4-B
Name
Pin
1: Cathode
2: Anode
Forward current (Average) I
F(AV)
= 2 A rectification is possible
Low forward voltage V
F
and small reverse current I
R
Contributes to miniaturization of sets, reduction of component count.
Eco-friendly Halogen-free package
Packaging
Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)
Marking Symbol: 4N
Absolute Maximum Ratings
T
a
= 25°C
Parameter
Reverse voltage
Forward current (Average)
*1
Non-repetitive peak forward surge current
*2
Junction temperature
Storage temperature
Symbol
V
R
I
F(AV)
I
FSM
T
j
T
stg
Rating
40
2
30
125
–55 to +125
Unit
V
A
A
°C
°C
Note) *1: Mounted on an alumina PC board (Board: 50 mm
×
50 mm)
*2: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
Electrical Characteristics
T
a
= 25°C±3°C
Parameter
Forward voltage
Reverse current
Terminal capacitance
Reverse recovery time
*
Symbol
V
F1
I
R
C
t
t
rr
I
F
= 2.0 A
V
R
= 40 V
V
R
= 10 V, f = 1 MHz
I
F
= I
R
= 100 mA, I
rr
= 0.1
×
I
R
,
R
L
= 100
Conditions
Min
Typ
0.46
25
43
12
Max
0.53
150
Unit
V
µA
pF
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage
of current from the operating equipment.
3. *: t
rr
measurement circuit
Bias Application Unit (N-50BU)
t
r
10%
Input Pulse
t
p
t
I
F
Output Pulse
t
rr
t
A
V
R
Wave Form Analyzer
(SAS-8130)
R
i
= 50
90%
t
p
= 2
µs
t
r
= 0.35 ns
δ
= 0.05
Pulse Generator
(PG-10N)
R
s
= 50
I
rr
=
0.1
×
I
R
I
F
= 100 mA
I
R
= 100 mA
R
L
= 100
Publication date: November 2010
Ver.CED
1
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