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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3408
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The 2SK3408 is a switching device which can be driven
directly by a 4.0 V power source.
The 2SK3408 features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such
as power switch of dynamic clamp of relay and so on.
PACKAGE DRAWING (Unit: mm)
0.4
+0.1
–0.05
0.16
+0.1
–0.06
0.65
–0.15
+0.1
2.8 ±0.2
3
1.5
FEATURES
•
Can be driven by a 4.0 V power source
•
Low on-state resistance
R
DS(on)1
= 195 mΩ MAX. (V
GS
= 10.0 V, I
D
= 0.5 A)
R
DS(on)2
= 250 mΩ MAX. (V
GS
= 4.5 V, I
D
= 0.5 A)
R
DS(on)3
= 260 mΩ MAX. (V
GS
= 4.0 V, I
D
= 0.5 A)
•
Built-in G-S protection diode against ESD.
0 to 0.1
1
2
0.95
0.95
0.65
0.9 to 1.1
1.9
2.9 ±0.2
1: Gate
2: Source
3: Drain
ORDERING INFORMATION
PART NUMBER
2SK3408
PACKAGE
SC-96 Mini Mold (Thin Type)
Marking: XF
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Drain to Gate Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
5
Drain Current (DC) (T
A
= 25°C)
Note1
Drain Current (pulse)
5
Total Power Dissipation (T
A
= 25°C)
Note2
Total Power Dissipation (T
A
= 25°C)
Channel Temperature
Storage Temperature
V
DSS
V
DGS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
43 ±5
43 ±5
±20
±1.0
±4.0
0.20
1.25
150
−55
to +150
V
V
V
A
A
W
W
°C
°C
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Notes 1.
PW
≤
10
µ
s, Duty Cycle
≤
1%
2
2
2.
Mounted on 250 mm x 35
µ
m copper pad connected to drain electrode in 2500 mm x 1.6 mm FR-4
board, t
≤
5 sec.
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D15016EJ4V0DS00 (4th edition)
Date Published May 2003 NS CP(K)
Printed in Japan
The mark
5
shows major revised points.
2000
Embedded System
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