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BAV3004WS

Description
0.225 A, 350 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size68KB,3 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
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BAV3004WS Overview

0.225 A, 350 V, SILICON, SIGNAL DIODE

BAV3004WS Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionGREEN, PLASTIC PACKAGE-2
Lead-freeYes
EU RoHS regulationsYes
China RoHS regulationsYes
stateACTIVE
packaging shapeRECTANGULAR
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
terminal coatingMATTE TIN
Terminal locationDUAL
Packaging MaterialsPLASTIC/EPOXY
structureSINGLE
Diode component materialsSILICON
Maximum power consumption limit0.2000 W
Diode typeSIGNAL DIODE
Maximum reverse recovery time0.0500 us
Maximum repetitive peak reverse voltage350 V
Maximum average forward current0.2250 A
BAV3004WS
SURFACE MOUNT LOW LEAKAGE DIODE
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Features
Surface Mount Package Ideally Suited for Automated Insertion
Low Leakage Current
Fast Switching Speed
High Reverse Breakdown Voltage
Lead Free By Design/RoHS Compliant (Note 3)
“Green” Device (Note 4)
Mechanical Data
SOD-323
Case: SOD-323
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Finish
Matte Tin Finish annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
Polarity: Cathode Band
Marking Information: See Page 2
Ordering Information: See Page 2
Weight: 0.004 grams (approximate)
TOP VIEW
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
FM
I
FRM
@ t = 1.0μs
@ t = 1.0s
I
FSM
Value
350
300
212
225
625
4.0
1.0
Unit
V
V
V
mA
mA
A
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current
Repetitive Peak Forward Current
Non-Repetitive Peak Forward Surge Current
Thermal Characteristics
Characteristic
Power Dissipation (Note 1)
Thermal Resistance Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
Symbol
P
D
R
θ
JA
T
J
, T
STG
Value
200
625
-65 to +150
Unit
mW
°C/W
°C
Electrical Characteristics
Characteristic
Reverse Breakdown Voltage (Note 2)
Forward Voltage
Leakage Current (Note 2)
Total Capacitance
Reverse Recovery Time
Notes:
1.
2.
3.
4.
@T
A
= 25°C unless otherwise specified
Symbol
V
(BR)R
V
F
I
R
C
T
t
rr
Min
350
Typ
0.78
0.93
1.03
30
35
1.0
Max
0.87
1.0
1.25
100
100
5.0
50
Unit
V
V
nA
μA
pF
ns
Test Condition
I
R
= 150μA
I
F
= 20mA
I
F
= 100mA
I
F
= 200mA
V
R
= 240V, T
J
= 25°C
V
R
= 240V, T
J
= 150°C
V
R
= 0, f = 1.0MHz
I
F
= I
R
= 30mA,
I
rr
= 3.0mA, R
L
= 100Ω
Part mounted on FR-4 PC board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
Short duration pulse test used to minimize self-heating effect.
No purposefully added lead.
Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
BAV3004WS
Document number: DS30646 Rev. 4 - 2
1 of 3
www.diodes.com
March 2008
© Diodes Incorporated

BAV3004WS Related Products

BAV3004WS BAV3004WS_08
Description 0.225 A, 350 V, SILICON, SIGNAL DIODE 0.225 A, 350 V, SILICON, SIGNAL DIODE
Number of terminals 2 2
Number of components 1 1
Processing package description GREEN, PLASTIC PACKAGE-2 GREEN, PLASTIC PACKAGE-2
Lead-free Yes Yes
EU RoHS regulations Yes Yes
China RoHS regulations Yes Yes
state ACTIVE ACTIVE
packaging shape RECTANGULAR RECTANGULAR
Package Size SMALL OUTLINE SMALL OUTLINE
surface mount Yes Yes
Terminal form GULL WING GULL WING
terminal coating MATTE TIN MATTE TIN
Terminal location DUAL DUAL
Packaging Materials PLASTIC/EPOXY PLASTIC/EPOXY
structure SINGLE SINGLE
Diode component materials SILICON SILICON
Maximum power consumption limit 0.2000 W 0.2000 W
Diode type SIGNAL DIODE SIGNAL DIODE
Maximum reverse recovery time 0.0500 us 0.0500 us
Maximum repetitive peak reverse voltage 350 V 350 V
Maximum average forward current 0.2250 A 0.2250 A

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