DZT651
LOW V
CE(SAT)
NPN SURFACE MOUNT TRANSISTOR
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Features
NEW PRODUCT
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Epitaxial Planar Die Construction
Complementary PNP Type Available (DZT751)
Ideally Suited for Automated Assembly Processes
Ideal for Medium Power Switching or Amplification Applications
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
3
2
1
4
SOT-223
COLLECTOR
2,4
BASE 1
3
EMITTER
Mechanical Data
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Case: SOT-223
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish — Matte Tin annealed over Copper Leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Marking Information: See Page 4
Ordering Information: See Page 4
Weight: 0.115 grams
3 E
C 4
2 C
1 B
TOP VIEW
Schematic and Pin Configuration
Maximum Ratings
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Collector Current
@T
A
= 25°C unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
Value
80
60
5
3
6
Unit
V
V
V
A
A
Characteristic
Thermal Characteristics
Characteristic
Power Dissipation @T
A
= 25°C
Thermal Resistance, Junction to Ambient Air (Note 3) @T
A
= 25°C
Operating and Storage Temperature Range
Notes:
1.
2.
3.
4.
Symbol
P
D
R
θ
JA
T
J
, T
STG
Value
1 (Note 3)
2 (Note 4)
125
-55 to +150
Unit
W
°C/W
°C
No purposefully added lead.
Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Device mounted on FR-4 PCB, pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001,
which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
Device mounted on Polyimide PCB with 1.8cm
2
copper area.
DS30809 Rev. 3 - 2
1 of 4
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DZT651
© Diodes Incorporated
Electrical Characteristics
Characteristic
Off Characteristics (Note 5)
Collector-Base Breakdown Voltage
@T
A
= 25°C unless otherwise specified
Symbol
Min
Typ
Max
Unit
Test Condition
NEW PRODUCT
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
80
60
5
⎯
⎯
⎯
⎯
⎯
⎯
70
100
80
40
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
0.1
10
0.1
V
V
V
μA
μA
μA
I
C
= 100μA, I
E
= 0
I
C
= 10mA, I
B
= 0
I
E
= 100μA, I
C
= 0
V
CB
= 60V, I
E
= 0
V
CB
= 60V, I
E
= 0, T
A
= 100°C
V
EB
= 4V, I
C
= 0
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
On Characteristics (Note 5)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
V
CE(SAT)
V
BE(SAT)
V
BE(ON)
0.08
0.23
0.85
0.8
200
200
185
120
0.3
0.6
1.25
1
⎯
300
⎯
⎯
⎯
30
⎯
⎯
V
V
V
V
⎯
I
C
= 1A, I
B
= 100mA
I
C
= 3A, I
B
= 300mA
I
C
= 1A, I
B
= 100mA
V
CE
= 2V, I
C
= 1A
V
CE
= 2V, I
C
= 50mA
V
CE
= 2V, I
C
= 500mA
V
CE
= 2V, I
C
= 1A
V
CE
= 2V, I
C
= 2A
DC Current Gain
h
FE
AC Characteristics
Transition Frequency
Output Capacitance
Switching Times
Notes:
5. Pulse Test: Pulse width
≤300μs.
Duty cycle
≤2.0%.
f
T
C
obo
t
on
t
off
140
⎯
⎯
⎯
200
⎯
35
230
MHz
pF
ns
ns
V
CE
= 5V, I
C
= 100mA, f = 100MHz
V
CB
= 10V, f = 1MHz
V
CC
= 10V, I
C
= 500mA
I
B1
= I
B2
= 50mA
1.2
2.0
1.8
I
C
, COLLECTOR CURRENT (A)
I
B
= 10mA
P
D
, POWER DISSIPATION (W)
1.0
1.6
1.4
1.2
1.0
0.8
I
B
= 4mA
I
B
= 6mA
I
B
= 8mA
0.8
0.6
0.4
0.6
0.4
0.2
I
B
= 2mA
0.2
25
50
75
100
125
150 175
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 1 Power Dissipation vs. Ambient Temperature (Note 3)
0
0
5
1
2
3
4
V
CE
, COLLECTOR EMITTER VOLTAGE (V)
Fig. 2 Typical Collector Current vs.Collector-Emitter Voltage
0
0.0
DS30809 Rev. 3 - 2
2 of 4
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DZT651
© Diodes Incorporated
350
V
CE
= 2V
0.35
TA = 150°C
V
CE(SAT)
, COLLECTOR EMITTER
SATURATION VOLTAGE (V)
300
h
FE
, DC CURRENT GAIN
250
200
150
100
50
0
0.001
0.3
0.25
0.2
0.15
I
C
/I
B
= 10
TA = 85°C
NEW PRODUCT
TA = 25°C
TA = 150°C
T A = -55°C
0.1
T A = 85°C
0.05
0
0.0001
TA = 25°C
TA = -55°C
0.01
0.1
1
I
C
, COLLECTOR CURRENT (A)
Fig. 3 Typical DC Current Gain
vs. Collector Current
V
CE
= 2V
10
0.001
0.01
0.1
1
10
I
C
, COLLECTOR CURRENT (A)
Fig. 4 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
V
BE(SAT)
, BASE EMITTER SATURATION VOLTAGE (V)
V
BE(ON)
, BASE EMITTER TURN-ON VOLTAGE (V)
1.2
1.0
1.2
I
C
/I
B
= 10
1.0
0.8
TA = -55°C
0.8
TA = -55°C
0.6
TA = 25°C
0.6
TA = 25°C
TA = 85°C
0.4
TA = 85°C
0.4
0.2
0.0
0.0001
TA = 150°C
0.2
TA = 150°C
0.001
0.01
0.1
1
10
I
C
, COLLECTOR CURRENT (A)
Fig. 5 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
0
0.0001
0.001
0.01
0.1
1
10
I
C
, COLLECTOR CURRENT (A)
Fig. 6 Typical Base-Emitter Saturation Voltage
vs. Collector Current
60
f
T
, GAIN-BANDWIDTH PRODUCT (MHz)
250
C
obo
, OUTPUT CAPACITANCE (pF)
50
f = 1MHz
200
40
150
30
100
V
CE
= 5V
f = 100MHz
20
10
0
0
50
10
15
20
25
30
35 40
V
R
, REVERSE VOLTAGE (V)
Fig. 7 Typical Output Capacitance Characteristics
5
20
40
60
80
100
I
C
, COLLECTOR CURRENT (mA)
Fig. 8 Typical Gain-Bandwidth Product vs. Collector Current
0
0
DS30809 Rev. 3 - 2
3 of 4
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DZT651
© Diodes Incorporated
Ordering Information
(Note 6)
Device
DZT651-13
Notes:
Packaging
SOT-223
Shipping
2500/Tape & Reel
6. For packaging details, go to our website at http://www.diodes.com/ap2007.pdf.
NEW PRODUCT
Marking Information
(Top View)
YWW
KN2
KN2 = Product Type Marking Code
YWW = Date Code Marking
Y = Last digit of year ex: 7 = 2007
WW = Week code 01 - 52
Package Outline Dimensions
SOT-223
Dim Min Max Typ
A
1.55 1.65 1.60
A1
0.010 0.15 0.05
b1
2.90 3.10 3.00
b2
0.60 0.80 0.70
C
0.20 0.30 0.25
D
6.45 6.55 6.50
E
3.45 3.55 3.50
E1
6.90 7.10 7.00
e
—
—
4.60
e1
—
—
2.30
L
0.85 1.05 0.95
Q
0.84 0.94 0.89
All Dimensions in mm
Suggested Pad Layout
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
DS30809 Rev. 3 - 2
4 of 4
www.diodes.com
DZT651
© Diodes Incorporated
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