2SB1116A-K datasheet, PDF - EEWORLD Datasheet

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2SB1116A-K: DescriptionSmall Signal Bipolar Transistor; CategoryDiscrete semiconductor The transistor; File Size171KB，2 Pages; ManufacturerSECOS; Websitehttp://www.secosgmbh.com/

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2SB1116A-K Overview

Small Signal Bipolar Transistor

2SB1116A-K Parametric

Parameter Name	Attribute value
Reach Compliance Code	compli
Base Number Matches	1

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2SB1116A

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

-1 A, -80 V

PNP Plastic Encapsulated Transistor

FEATURES

High Collector Power Dissipation

Complementary to 2SD1616A

G

H

TO-92

CLASSIFICATION OF h

FE(1)

Product-Rank

Range

2SB1116A-L

135~270

2SB1116A-K

200~400

2SB1116A-U

300~600

K

A

1

Emitter

2

Collector

3

Base

J

D

REF.

Millimeter

Min.

Max.

4.40

4.70

4.30

4.70

12.70

-

3.30

3.81

0.36

0.56

0.36

0.51

1.27 TYP.

1.10

-

2.42

2.66

0.36

0.76

B

E

C

F

A

B

C

D

E

F

G

H

J

K

Collector

2

3

Base

1

Emitter

ABSOLUTE MAXIMUM RATINGS

(T

A

= 25°C unless otherwise specified)

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current - Continuous

Collector Power Dissipation

Junction, Storage Temperature

Symbol

V

CBO

V

CEO

V

EBO

I

C

P

C

T

J

, T

STG

Rating

-80

-60

-6

-1

0.75

150, -55~150

Unit

V

A

W

°

C

ELECTRICAL CHARACTERISTICS

(T

A

= 25°C unless otherwise specified)

Parameter

Collector to Base Breakdown Voltage

Collector to Emitter Breakdown Voltage

Emitter to Base Breakdown Voltage

Collector Cut-Off Current

Emitter Cut-Off Current

DC Current Gain

Collector to Emitter Saturation Voltage

Base to Emitter Saturation Voltage

Base to Emitter voltage

Collector-Base Capacitance

Transition Frequency

Turn-on time

Storage time

Fall time

http://www.SeCoSGmbH.com/

Symbol

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

I

EBO

h

FE (1)

h

FE (2)

V

CE(sat)

V

BE(sat)

V

BE

C

cb

f

T

ON

T

S

T

F

Min.

-80

-60

-6

-

135

81

-

-0.6

-

70

-

Typ.

-

25

-

0.07

0.7

0.07

Max.

-

-0.1

600

-

-0.3

-1.2

-0.7

-

Unit

V

µA

Test Conditions

I

C

= -100µA, I

E

=0

I

C

= -1mA, I

B

=0

I

E

= -100µA, I

C

=0

V

CB

= -80V, I

E

=0

V

EB

= -6V, I

C

=0

V

CE

= -2V, I

C

= -0.1A

V

CE

= -2V, I

C

= -1A

V

pF

MHz

us

I

C

= -1A, I

B

= -50mA

I

C

= -1A, I

B

= -50mA

V

CE

= -2V, I

C

= -0.05A

V

CB

= -10V, I

E

=0, f=1MHz

V

CE

= -2V, I

C

= -0.1A

V

CC

= -10V, I

C

= -0.1A, I

B1

= -I

B2

= -0.01A

V

BE(off)

= 2 ~ 3V

Any changes of specification will not be informed individually.

21-Jan-2011 Rev. B

Page 1 of 2

2SB1116A-K Related Products

	2SB1116A-K	2SB1116A-L	2SB1116A-U	2SB1116A-L-C	2SB1116A-U-C	2SB1116A-K-C	2SB1116A-C
Description	Small Signal Bipolar Transistor	Small Signal Bipolar Transistor	Small Signal Bipolar Transistor	Small Signal Bipolar Transistor	Small Signal Bipolar Transistor	Small Signal Bipolar Transistor	Small Signal Bipolar Transistor
Reach Compliance Code	compli	compli	compli	compli	compli	compli	compliant
Base Number Matches	1	1	1	1	1	1	1

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