2SB1116A
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
-1 A, -80 V
PNP Plastic Encapsulated Transistor
FEATURES
High Collector Power Dissipation
Complementary to 2SD1616A
G
H
TO-92
CLASSIFICATION OF h
FE(1)
Product-Rank
Range
2SB1116A-L
135~270
2SB1116A-K
200~400
2SB1116A-U
300~600
K
A
1
Emitter
2
Collector
3
Base
J
D
REF.
Millimeter
Min.
Max.
4.40
4.70
4.30
4.70
12.70
-
3.30
3.81
0.36
0.56
0.36
0.51
1.27 TYP.
1.10
-
2.42
2.66
0.36
0.76
B
E
C
F
A
B
C
D
E
F
G
H
J
K
Collector
2
3
Base
1
Emitter
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
, T
STG
Rating
-80
-60
-6
-1
0.75
150, -55~150
Unit
V
V
V
A
W
°
C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector to Emitter Saturation Voltage
Base to Emitter Saturation Voltage
Base to Emitter voltage
Collector-Base Capacitance
Transition Frequency
Turn-on time
Storage time
Fall time
http://www.SeCoSGmbH.com/
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE (1)
h
FE (2)
V
CE(sat)
V
BE(sat)
V
BE
C
cb
f
T
T
ON
T
S
T
F
Min.
-80
-60
-6
-
-
135
81
-
-
-0.6
-
70
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
25
-
0.07
0.7
0.07
Max.
-
-
-
-0.1
-0.1
600
-
-0.3
-1.2
-0.7
-
-
-
-
-
Unit
V
V
V
µA
µA
Test Conditions
I
C
= -100µA, I
E
=0
I
C
= -1mA, I
B
=0
I
E
= -100µA, I
C
=0
V
CB
= -80V, I
E
=0
V
EB
= -6V, I
C
=0
V
CE
= -2V, I
C
= -0.1A
V
CE
= -2V, I
C
= -1A
V
V
V
pF
MHz
us
I
C
= -1A, I
B
= -50mA
I
C
= -1A, I
B
= -50mA
V
CE
= -2V, I
C
= -0.05A
V
CB
= -10V, I
E
=0, f=1MHz
V
CE
= -2V, I
C
= -0.1A
V
CC
= -10V, I
C
= -0.1A, I
B1
= -I
B2
= -0.01A
V
BE(off)
= 2 ~ 3V
Any changes of specification will not be informed individually.
21-Jan-2011 Rev. B
Page 1 of 2
2SB1116A
Elektronische Bauelemente
-1 A, -80 V
PNP Plastic Encapsulated Transistor
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
21-Jan-2011 Rev. B
Page 2 of 2
Embedded System
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