DSS60600MZ4
60V PNP LOW VCE(SAT) TRANSISTOR IN SOT223
Features
Ideally Suited for Automated Assembly Processes
Ultra Low Collector-Emitter Saturation Voltage
Complementary NPN Type Available (DSS60601MZ4)
Ideal for Medium Power Switching or Amplification Applications
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT223
Case Material: Molded Plastic. “Green” Molding Compound.
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
Weight: 0.112 grams (Approximate)
SOT223
C
E
B
C
C
E
Top View
Device Symbol
Top View
Pin-Out
B
Ordering Information
(Note 4)
Product
DSS60600MZ4-13
Notes:
Compliance
AEC-Q101
Marking
ZPS66
Reel size (inches)
13
Tape width (mm)
12
Quantity per reel
2,500
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
ZPS66 = Product Type Marking Code
YWW = Date Code Marking
Y = Last Digit of Year (ex: 7 = 2017)
WW = Week Code 01 - 52
DSS60600MZ4
Document Number DS31589 Rev. 3 - 2
1 of 8
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November 2017
© Diodes Incorporated
DSS60600MZ4
Absolute Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
Value
-100
-60
-7
-6
-12
Unit
V
V
V
A
A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Power Dissipation
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
(Note 5)
(Note 6)
(Note 5)
(Note 6)
Symbol
P
D
R
θJA
T
J,
T
STG
Value
1.2
2.0
104
62.5
-55 to +150
Unit
W
W
C/W
C/W
C
ESD Ratings
(Note 7)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Notes:
Symbol
ESD HBM
ESD MM
Value
4,000
400
Unit
V
V
JEDEC Class
3A
C
5. Device mounted on FR-4 PCB with minimum recommended pad layout.
6. Device mounted on Polymide PCB with 330mm
2
2oz. Copper pad layout.
7. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
DSS60600MZ4
Document Number DS31589 Rev. 3 - 2
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November 2017
© Diodes Incorporated
DSS60600MZ4
Thermal Characteristics and Derating Information
DSS60600MZ4
Document Number DS31589 Rev. 3 - 2
3 of 8
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November 2017
© Diodes Incorporated
DSS60600MZ4
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
Min
-100
-60
-7
150
120
100
70
100
Typ
-50
-90
45
50
300
350
180
170
400
300
100
Max
-100
-50
-100
360
-50
-70
-120
-250
-350
60
-1.0
-0.9
Unit
V
V
V
nA
µA
nA
Test Conditions
I
C
= -100µA
I
C
= -10mA
I
E
= -100µA
V
CB
= -100V, I
E
= 0
V
CB
= -100V, I
E
= 0, T
A
= 150°C
V
EB
= -6V, I
C
= 0
V
CE
= -2V, I
C
= -0.5A
V
CE
= -2V, I
C
= -1A
V
CE
= -2V, I
C
= -2A
V
CE
= -2V, I
C
= -6A
I
C
= -0.1A, I
B
= -2mA
I
C
= -1A, I
B
= -100mA
I
C
= -2A, I
B
= -200mA
I
C
= -3A, I
B
= -60mA
I
C
= -6A, I
B
= -600mA
I
C
= -2A, I
B
= -200mA
I
C
= 1A, I
B
= -100mA
V
CE
= -2V, I
C
= -1A
V
CE
= -10V, I
C
= -100mA,
f = 100MHz
V
CB
= -10V, f = 1MHz
V
EB
= -5V, f = 1MHz
V
CC
= -30V, I
C
= -750mA,
I
B1
= -15mA
V
CC
= -30V, I
C
= -750mA,
I
B1
= -I
B2
= -15mA
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 8)
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
ON CHARACTERISTICS (Note 8)
DC Current Gain
h
FE
Collector-Emitter Saturation Voltage
V
CE(SAT)
mV
Equivalent On-Resistance
Base-Emitter Saturation Voltage
Base-Emitter Turn-on Voltage
SMALL SIGNAL CHARACTERISTICS
Transition Frequency
Output Capacitance
Input Capacitance
SWITCHING CHARACTERISTICS
Turn-On Time
Delay Time
Rise Time
Turn-Off Time
Storage Time
Fall Time
Note:
R
CE(SAT)
V
BE(SAT)
V
BE(ON)
f
T
C
obo
C
ibo
t
on
t
d
t
r
t
off
t
s
t
f
mΩ
V
V
MHz
pF
pF
ns
ns
ns
ns
ns
ns
8. Measured under pulsed conditions. Pulse width ≤ 300 µs. Duty cycle ≤ 2%
DSS60600MZ4
Document Number DS31589 Rev. 3 - 2
4 of 8
www.diodes.com
November 2017
© Diodes Incorporated
DSS60600MZ4
Typical Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
DSS60600MZ4
Document Number DS31589 Rev. 3 - 2
5 of 8
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November 2017
© Diodes Incorporated
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