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DH71016-53T10

Description
Variable Capacitance Diode, High Frequency to S Band, 1.6pF C(T), 30V, Silicon, Abrupt, PLASTIC PACKAGE-3
CategoryDiscrete semiconductor    diode   
File Size51KB,2 Pages
ManufacturerTemex Ceramics
Download Datasheet Parametric View All

DH71016-53T10 Overview

Variable Capacitance Diode, High Frequency to S Band, 1.6pF C(T), 30V, Silicon, Abrupt, PLASTIC PACKAGE-3

DH71016-53T10 Parametric

Parameter NameAttribute value
MakerTemex Ceramics
package instructionR-PDSO-G3
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresLOW NOISE
Minimum breakdown voltage30 V
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode Capacitance Tolerance20%
Nominal diode capacitance1.6 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
frequency bandHIGH FREQUENCY TO S BAND
JESD-30 codeR-PDSO-G3
Number of components2
Number of terminals3
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Varactor Diode ClassificationABRUPT
TUNING VARACTOR
Plastic package Surface Mount Silicon abrupt tuning varactor
SOT23 SURFACE MOUNT SILICON ABRUPT
TUNING VARACTOR
Description
This series of silicon tuning varactors have an epitaxial mesa design with a high temperature
passivation. This technology is used to produce abrupt tuning varactor in SOT23 package. This family
is designed for a low cost medium to high volume market that may be supplied in tape and reel
for automated pick and place assembly on surface mount circuit boards.
Applications
The DH71000 series abrupt tuning varactor are offered in a large selection of capacitance range.
They provide the highest Q factor (low reverse series resistance) available for a 30 volts silicon device.
Typical applications include low noise narrow and moderate frequency bandwidth applications
(VCO mainly) from HF to Microwave frequencies (up to 3 GHz). Other applications are voltage tuned
filters, phase shifters, delay line, etc.
NOTE:
Variation of the junction capacitance versus reverse voltage follows this equation:
C
j
(V
r
)
=
C
j
(0 V)
1 + V
r
φ
[
]
γ
V
r
:
φ
:
γ
:
Reverse voltage
Built-in potential .7V for Si
.5 for abrupt tuning varactor
12-32
Vol. 1
SALES OFFICES: VISIT OUR WEB SITE AT
http://www.temex.com
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