FMMT618 datasheet, PDF - EEWORLD Datasheet

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FMMT618: Description2500 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR; Categorysemiconductor Discrete semiconductor; File Size292KB，4 Pages; ManufacturerDiodes; Websitehttp://www.diodes.com/

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FMMT618 Overview

2500 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR

FMMT618 Parametric

Parameter Name	Attribute value
Maximum collector current	2.5 A
Maximum Collector-Emitter Voltage	20 V
Number of terminals	3
Maximum off time	400 ns
Maximum on-time	170 ns
Processing package description	SOT-23, 3 PIN
state	Active
structure	SINGLE
Minimum DC amplification factor	300
jesd_30_code	R-PDSO-G3
Number of components	1
Maximum operating temperature	150 Cel
Packaging Materials	PLASTIC/EPOXY
packaging shape	RECTANGULAR
Package Size	SMALL OUTLINE
larity_channel_type	NPN
wer_dissipation_max__abs_	0.6250 W
qualification_status	COMMERCIAL
sub_category	Other Transistors
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Rated crossover frequency	140 MHz

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SuperSOT

SOT23 NPN SILICON POWER

(SWITCHING) TRANSISTORS

ISSUE 3 - NOVEMBER 1995

FEATURES

FMMT617 FMMT618

FMMT619 FMMT624

FMMT625

625mW POWER DISSIPATION

CONT 3A

12A Peak Pulse Current

Excellent H

Characteristics Up To 12A (pulsed)

Extremely Low Saturation Voltage E.g. 8mV Typ.

Extremely Low Equivalent On Resistance;

CE(sat)

DEVICE TYPE

FMMT617

FMMT618

FMMT619

FMMT624

FMMT625

COMPLEMENT

FMMT717

FMMT718

FMMT720

FMMT723

PARTMARKING

617

618

619

624

625

CE(sat)

50m

Ω

at 3A

50m

Ω

at 2A

75m

Ω

at 2A

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current**

Continuous Collector Current

Base Current

Power Dissipation at T

amb

=25°C*

SYMBOL

CBO

CEO

EBO

tot

FMMT FMMT FMMT FMMT FMMT

617

618

619

624

625

2.5

500

625

-55 to +150

125

150

UNIT

°C

Operating and Storage Temperature T

stg

Range

* Maximum power dissipation is calculated assuming that the device is mounted on a ceramic

substrate measuring 15x15x0.6mm

**Measured under pulsed conditions. Pulse width=300

s. Duty cycle

≤

Spice parameter data is available upon request for these devices

3 - 149

FMMT618 Related Products

	FMMT618	FMMT617	FMMT619
Description	2500 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR	2500 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR	2000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
Maximum collector current	2.5 A	2.5 A	2 A
Maximum Collector-Emitter Voltage	20 V	20 V	50 V
Number of terminals	3	3	3
Processing package description	SOT-23, 3 PIN	SOT-23, 3 PIN	SUPERSOT-3
state	Active	Active	Active
structure	SINGLE	SINGLE	SINGLE
Minimum DC amplification factor	300	300	100
jesd_30_code	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
Number of components	1	1	1
Maximum operating temperature	150 Cel	150 Cel	150 Cel
Packaging Materials	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
packaging shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package Size	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
larity_channel_type	NPN	NPN	NPN
wer_dissipation_max__abs_	0.6250 W	0.6250 W	0.6250 W
qualification_status	COMMERCIAL	COMMERCIAL	COMMERCIAL
sub_category	Other Transistors	Other Transistors	Other Transistors
surface mount	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON
Rated crossover frequency	140 MHz	140 MHz	165 MHz
Maximum off time	400 ns	400 ns	-
Maximum on-time	170 ns	170 ns	-

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