SuperSOT
SOT23 NPN SILICON POWER
(SWITCHING) TRANSISTORS
ISSUE 3 - NOVEMBER 1995
FEATURES
FMMT617 FMMT618
FMMT619 FMMT624
FMMT625
*
*
*
*
*
*
625mW POWER DISSIPATION
I
C
CONT 3A
12A Peak Pulse Current
Excellent H
FE
Characteristics Up To 12A (pulsed)
Extremely Low Saturation Voltage E.g. 8mV Typ.
Extremely Low Equivalent On Resistance;
R
CE(sat)
C
B
E
DEVICE TYPE
FMMT617
FMMT618
FMMT619
FMMT624
FMMT625
COMPLEMENT
FMMT717
FMMT718
FMMT720
FMMT723
PARTMARKING
617
618
619
624
625
R
CE(sat)
50m
Ω
at 3A
50m
Ω
at 2A
75m
Ω
at 2A
-
-
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current**
Continuous Collector Current
Base Current
Power Dissipation at T
amb
=25°C*
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
P
tot
FMMT FMMT FMMT FMMT FMMT
617
618
619
624
625
15
15
5
12
3
20
20
5
6
2.5
50
50
5
6
2
500
625
-55 to +150
125
125
5
3
1
150
150
5
3
1
UNIT
V
V
V
A
A
mA
mW
°C
Operating and Storage Temperature T
j
:T
stg
Range
* Maximum power dissipation is calculated assuming that the device is mounted on a ceramic
substrate measuring 15x15x0.6mm
**Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
Spice parameter data is available upon request for these devices
3 - 149
FMMT617
FMMT617
MAX.
V
I
C
=100
µ
A
I
+
/I
*
=60
+25 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
UNIT
1
0.4
0.3
0.2
PARAMETER
SYMBOL
MIN.
TYP.
CONDITIONS.
TYPICAL CHARACTERISTICS
Collector-Base
Breakdown Voltage
V
V
I
E
=100
µ
A
10m
I
+
/I
*
=100
I
+
/I
*
=60
I
+
/I
*
=10
V
(BR)CBO
I
C
=10mA*
100m
15
70
Collector-Emitter
Breakdown Voltage
0.1
V
(BR)CEO
15
18
Emitter-Base
Breakdown Voltage
100
1m
1m
10m
100m
10
1
V
(BR)EBO
nA
nA
nA
V
CE(SAT)
v I
C
V
CES
=10V
I
C
- Collector Current (A)
5
V
CB
=10V
V
EB
=4V
8.2
100°C
25°C
-55°C
Collector Cut-Off
Current
100
100
I
CBO
Emitter Cut-Off Current I
EBO
0.0
1mA
10mA
100mA
1A
10A
100A
Collector Emitter
Cut-Off Current
14
100
200
mV
mV
mV
1.2
1.0
25°C
100°C
V
+-
=2V
I
CES
Collector Current
V
CE(SAT)
vs I
C
Collector-Emitter
Saturation Voltage
I
C
=0.1A, I
B
=10mA*
I
C
=1A, I
B
=10mA*
I
C
=3A, I
B
=50mA*
I
C
=3A, I
B
=50mA*
0.8
0.6
-55°C
V
CE(sat)
8
70
150
1.0
1.0
0.4
0.2
0.0
1mA
10mA
100mA
1A
10A
1.4
450
1.2
1.0
0.8
225
0.6
0.4
0.2
0
100A
I
+
/I
*
=60
Base-Emitter
Saturation Voltage
V
I
C
=3A, V
CE
=2V*
V
BE(sat)
0.9
V
-55°C
25°C
100°C
Base-Emitter Turn-On
Voltage
V
BE(on)
0.84
Static Forward Current h
FE
Transfer
Ratio
I
C
=10mA, V
CE
=2V*
I
C
=200mA, V
CE
=2V*
I
C
=3A, V
CE
=2V*
I
C
=5A, V
CE
=2V*
I
C
=12A, V
CE
=2V*
MHz
40
ns
ns
V
CC
=10V, I
C
=3A
I
B1
=I
B2
=50mA
pF
V
CB
=10V, f=1MHz
I
C
=50mA, V
CE
=10V
f=50MHz
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1mA
V
+-
=2V
200
300
200
150
0.0
1mA
10mA
100mA
1A
10A
100A
415
450
320
240
80
Collector Current
Collector Current
Transition
Frequency
f
T
80
120
h
FE
vs I
C
V
BE(SAT)
vs I
C
SINGLE PULSE TEST T
amb
= 25 deg C
10
Output Capacitance
C
obo
30
Turn-On Time
t
(on)
120
Turn-Off Time
t
(off)
160
-55°C
25°C
100°C
1.0
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
0.1
D.C.
1s
100ms
10ms
1ms
100
µ
s
10mA
100mA
1A
10A
100A
0.01
0.1
1.0
10
100
Collector Current
V
CE
(VOLTS)
V
BE(ON)
vs I
C
Safe Operating Area
3 - 150
3 - 151
FMMT617
FMMT617
MAX.
V
I
C
=100
µ
A
I
+
/I
*
=60
+25 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
UNIT
1
0.4
0.3
0.2
PARAMETER
SYMBOL
MIN.
TYP.
CONDITIONS.
TYPICAL CHARACTERISTICS
Collector-Base
Breakdown Voltage
V
V
I
E
=100
µ
A
10m
I
+
/I
*
=100
I
+
/I
*
=60
I
+
/I
*
=10
V
(BR)CBO
I
C
=10mA*
100m
15
70
Collector-Emitter
Breakdown Voltage
0.1
V
(BR)CEO
15
18
Emitter-Base
Breakdown Voltage
100
1m
1m
10m
100m
10
1
V
(BR)EBO
nA
nA
nA
V
CE(SAT)
v I
C
V
CES
=10V
I
C
- Collector Current (A)
5
V
CB
=10V
V
EB
=4V
8.2
100°C
25°C
-55°C
Collector Cut-Off
Current
100
100
I
CBO
Emitter Cut-Off Current I
EBO
0.0
1mA
10mA
100mA
1A
10A
100A
Collector Emitter
Cut-Off Current
14
100
200
mV
mV
mV
1.2
1.0
25°C
100°C
V
+-
=2V
I
CES
Collector Current
V
CE(SAT)
vs I
C
Collector-Emitter
Saturation Voltage
I
C
=0.1A, I
B
=10mA*
I
C
=1A, I
B
=10mA*
I
C
=3A, I
B
=50mA*
I
C
=3A, I
B
=50mA*
0.8
0.6
-55°C
V
CE(sat)
8
70
150
1.0
1.0
0.4
0.2
0.0
1mA
10mA
100mA
1A
10A
1.4
450
1.2
1.0
0.8
225
0.6
0.4
0.2
0
100A
I
+
/I
*
=60
Base-Emitter
Saturation Voltage
V
I
C
=3A, V
CE
=2V*
V
BE(sat)
0.9
V
-55°C
25°C
100°C
Base-Emitter Turn-On
Voltage
V
BE(on)
0.84
Static Forward Current h
FE
Transfer
Ratio
I
C
=10mA, V
CE
=2V*
I
C
=200mA, V
CE
=2V*
I
C
=3A, V
CE
=2V*
I
C
=5A, V
CE
=2V*
I
C
=12A, V
CE
=2V*
MHz
40
ns
ns
V
CC
=10V, I
C
=3A
I
B1
=I
B2
=50mA
pF
V
CB
=10V, f=1MHz
I
C
=50mA, V
CE
=10V
f=50MHz
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1mA
V
+-
=2V
200
300
200
150
0.0
1mA
10mA
100mA
1A
10A
100A
415
450
320
240
80
Collector Current
Collector Current
Transition
Frequency
f
T
80
120
h
FE
vs I
C
V
BE(SAT)
vs I
C
SINGLE PULSE TEST T
amb
= 25 deg C
10
Output Capacitance
C
obo
30
Turn-On Time
t
(on)
120
Turn-Off Time
t
(off)
160
-55°C
25°C
100°C
1.0
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
0.1
D.C.
1s
100ms
10ms
1ms
100
µ
s
10mA
100mA
1A
10A
100A
0.01
0.1
1.0
10
100
Collector Current
V
CE
(VOLTS)
V
BE(ON)
vs I
C
Safe Operating Area
3 - 150
3 - 151
FMMT617 FMMT624
FMMT618 FMMT625
FMMT619
SuperSOT Series
FMMT717 FMMT722
FMMT718 FMMT723
FMMT720
THERMAL CHARACTERISTICS AND DERATING INFORMATION
DERATING CURVE
MAXIMUM TRANSIENT THERMAL RESISTANCE
* Reference above figures, Devices were mounted on a 15mmx15mm ceramic substrate
3 - 158
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