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NAND02GW4B2AZB1F

Description
128MX16 FLASH 3V PROM, 25000ns, PBGA63, 9.50 X 12 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, TFBGA-63
Categorystorage    storage   
File Size632KB,64 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Environmental Compliance
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NAND02GW4B2AZB1F Overview

128MX16 FLASH 3V PROM, 25000ns, PBGA63, 9.50 X 12 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, TFBGA-63

NAND02GW4B2AZB1F Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSTMicroelectronics
Parts packaging codeBGA
package instructionTFBGA, BGA63,10X12,32
Contacts63
Reach Compliance Codeunknown
ECCN code3A991.B.1.A
Maximum access time25000 ns
command user interfaceYES
Data pollingNO
JESD-30 codeR-PBGA-B63
JESD-609 codee1
length12 mm
memory density2147483648 bit
Memory IC TypeFLASH
memory width16
Number of functions1
Number of departments/size2K
Number of terminals63
word count134217728 words
character code128000000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize128MX16
Package body materialPLASTIC/EPOXY
encapsulated codeTFBGA
Encapsulate equivalent codeBGA63,10X12,32
Package shapeRECTANGULAR
Package formGRID ARRAY, THIN PROFILE, FINE PITCH
page size1K words
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
power supply3/3.3 V
Programming voltage3 V
Certification statusNot Qualified
ready/busyYES
Maximum seat height1.2 mm
Department size64K
Maximum standby current0.00005 A
Maximum slew rate0.03 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Silver/Copper (Sn/Ag/Cu)
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperature30
switch bitNO
width9.5 mm
NAND01G-B
NAND02G-B
1 Gbit, 2 Gbit,
2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
Feature summary
High Density NAND Flash memories
Up to 2 Gbit memory array
Up to 64Mbit spare area
Cost effective solutions for mass
storage applications
x8 or x16 bus width
Multiplexed Address/ Data
Pinout compatibility for all densities
FBGA
NAND interface
TSOP48 12 x 20mm
Supply voltage
1.8V device: V
DD
= 1.7 to 1.95V
3.0V device: V
DD
= 2.7 to 3.6V
x8 device: (2048 + 64 spare) Bytes
x16 device: (1024 + 32 spare) Words
x8 device: (128K + 4K spare) Bytes
x16 device: (64K + 2K spare) Words
Random access: 25µs (max)
Sequential access: 50ns (min)
Page program time: 300µs (typ)
Page size
VFBGA63 9.5 x 12 x 1mm
TFBGA63 9.5 x 12 x 1.2mm
Block size
Serial Number option
Data protection
Hardware and Software Block Locking
Hardware Program/Erase locked during
Power transitions
100,000 Program/Erase cycles
10 years Data Retention
Page Read/Program
Data integrity
Copy Back Program mode
Fast page copy without external
buffering
Internal Cache Register to improve the
program and read throughputs
Block erase time: 2ms (typ)
ECOPACK
®
packages
Development tools
Error Correction Code software and
hardware models
Bad Blocks Management and Wear
Leveling algorithms
File System OS Native reference
software
Hardware simulation models
Cache Program and Cache Read modes
Fast Block Erase
Status Register
Electronic Signature
Chip Enable ‘don’t care’
for simple interface with microcontroller
February 2006
Rev 4.0
1/64
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