DATA SHEET
NPN SILICON EPITAXIAL TRANSISTOR
2SC4783
NPN SILICON EPITAXIAL TRANSISTOR
DESCRIPTION
The 2SC4783 is NPN silicon epitaxial transistor.
PACKAGE DRAWING (Unit: mm)
0.3 ± 0.05
0.1
+0.1
–0.05
FEATURES
1.6 ± 0.1
0.8 ± 0.1
•
High DC current gain: h
FE2
= 200 TYP.
•
High voltage: V
CEO
= 50 V
3
0 to 0.1
2
0.2
+0.1
–0
0.5
0.5
0.6
0.75 ± 0.05
1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current (DC)
Collector Current (pulse)
Note1
Note2
V
CBO
V
CEO
V
EBO
I
C(DC)
I
C(pulse)
P
T
T
j
T
stg
60
50
5.0
100
200
200
150
–55 to + 150
V
V
V
mA
mA
mW
°C
°C
1.0
1.6 ± 0.1
Total Power Dissipation (T
A
= 25°C)
Junction Temperature
Storage Temperature Range
1: Emitter
2: Base
3: Collector
Notes 1.
PW
≤
10 ms, Duty Cycle
≤
50%
2
2.
When mounted on ceramic substrate of 3.0 cm x 0.64 mm
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Note
SYMBOL
I
CBO
I
EBO
h
FE1
h
FE2
TEST CONDITIONS
V
CB
= 60 V, I
E
= 0
V
EB
= 5.0 V, I
C
= 0
V
CE
= 6.0 V, I
C
= 0.1 mA
V
CE
= 6.0 V, I
C
= 1.0 mA
V
CE
= 6.0 V, I
C
= 1.0 mA
I
C
= 100 mA, I
B
= 10 mA
I
C
= 100 mA, I
B
= 10 mA
V
CE
= 6.0 V, I
E
=
−10
mA
V
CE
= 6.0 V, I
E
= 0, f = 1.0 MHz
MIN.
TYP.
MAX.
100
100
UNIT
nA
nA
−
50
90
200
0.62
0.15
0.86
150
250
3.0
4.0
0.3
1.0
600
−
V
V
V
MHz
pF
Base to Emitter Voltage
Note
Note
V
BE
V
CE(sat)
V
BE(sat)
f
T
C
ob
Collector Saturation Voltage
Base Saturation Voltage
Gain Bandwidth Product
Output Capacitance
Note
Note
Pulsed: PW
≤
350
µ
s, Duty Cycle
≤
2%
h
FE
CLASSFICATION
Marking
h
FE2
L4
90 to 180
L5
135 to 270
L6
200 to 400
L7
300 to 600
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
D15616EJ1V0DS00 (1st edition)
Date Published July 2001 NS CP(K)
Printed in Japan
©
2001
2SC4783
TYPICAL CHARACTERISTICS (T
A
= 25°C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
300
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
V
CE
= 6.0 V
P
T
- Total Power Dissipation - mW
Free air
W
I
C
- Collector Current - mA
250
he
30
10
=7
5˚C
25
˚C
–25
˚C
200
150
100
50
nm
ou
nte
do
3
1
0.3
0.1
0.03
nc
er
am
bs
tra
te
of
3.0
cm
2
x0
.64
mm
0
25
50
75
100
125
150
0.01
0.4
0.5
T
A
ic
su
0.6
0.7
0.8
0.9
1.0
T
A
- Ambient Temperature - ˚C
V
BE
- Base to Emitter Voltage - V
COLLECTOR CURRENT vs. COLLECTOR TO
EMITTER VOLTAGE
100
I
C
- Collector Current - mA
1.0
0.9
0.8
0.7
COLLECTOR CURRENT vs. COLLECTOR TO
EMITTER VOLTAGE
10
45
40
I
C
- Collector Current - mA
80
60
0.6
0.5
8
6
35
30
25
20
0.4
0.3
0.2
40
4
15
10
20
I
B
= 0.1 mA
2
I
B
= 5.0
µA
0
0.5
1.0
1.5
2.0
0
10
20
30
40
50
V
CE
- Collector to Emitter Voltage - V
V
CE
- Collector to Emitter Voltage - V
COLLECTOR AND BASE SATURATION VOLTAGE vs.
COLLECTOR CURRENT
V
BE(sat)
- Base Saturation Voltage - V
V
CE(sat)
- Collector Saturation Voltage - V
OUTPUT CAPACITANCE vs. REVERSE VOLTAGE
10
f = 1.0 MHz
1
V
BE(sat)
C
ob
- Output Capacitance - pF
I
C
= 10
.
I
B
0.5
0.2
0.1
0.05
0.02
0.01
1
2
5
10
20
V
CE(sat)
5
2
1
0.5
0.2
0.1
1
2
5
10
20
50
100
50
100
I
C
- Collector Current - mA
V
CB
- Collector to Base Voltage - V
2
Data Sheet D15616EJ1V0DS
2SC4783
•
The information in this document is current as of July, 2001. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
•
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written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
•
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•
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purposes in semiconductor product operation and application examples. The incorporation of these
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