High-Frequency Amplifier Transistor (20V, 50mA, 1.5GHz)
2SC5661 / 2SC4725 / 2SC4082 / 2SC3837K
Features
1) High transition frequency. (Typ. f
T
= 1.5GHz)
2) Small rbb’Cc and high gain. (Typ. 6ps)
3) Small NF.
Packaging
specifications and h
FE
Type
Package
h
FE
Marking
Code
Basic ordering unit
(pieces)
∗
Denotes h
FE
Dimensions
(Unit : mm)
2SC5661
2SC5661
VMT3
NP
AC
∗
T2L
8000
2SC4725
EMT3
NP
AC
∗
TL
3000
2SC4082
UMT3
NP
1C
∗
T106
3000
2SC3837K
SMT3
NP
AC
∗
T146
3000
ROHM : VMT3
(1) Base
(2) Emitter
(3) Collector
2SC4725
ROHM : EMT3
EIAJ : SC-75A
(1) Emitter
(2) Base
(3) Collector
Absolute maximum ratings
(Ta=25C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
2SC5661, 2SC4725
Collector power
dissipation
2SC4082, 2SC3837K
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
30
20
3
50
0.15
0.2
150
−55
to
+150
Unit
V
V
V
mA
W
°C
°C
2SC4082
ROHM : UMT3
EIAJ : SC-70
(1) Emitter
(2) Base
(3) Collector
Each lead has same dimensions
2.9
0.4
(3)
1.6
2.8
2SC3837K
1.1
0.8
(2)
(1)
0.95 0.95
ROHM : SMT3
EIAJ : SC-59
0.15
1.9
Each lead has same dimensions
Electrical
characteristics
(Ta=25C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Collector-base time constant
Noise factor
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
Min.
30
20
3
−
−
−
82
600
−
−
−
Typ.
−
−
−
−
−
−
−
1500
0.9
6
4.5
Max.
−
−
−
0.5
0.5
0.5
180
−
1.5
13
−
Unit
V
V
V
μA
μA
V
−
MHz
pF
ps
dB
I
C
=
10μA
I
C
=
1mA
I
E
=
10μA
V
CB
=
15V
V
EB
=
2V
I
C
/I
B
=
20mA/4mA
V
CE
/I
C
=
10V/10mA
V
CE
=
10V , I
E
= −
10mA , f
=
200MHz
V
CB
=
10V , I
E
=
0A , f
=
1MHz
V
CB
=
10V , I
C
=
10mA , f
=
31.8MHz
V
CE
=
12V , I
C
=
2mA , f
=
200MHz , Rg
=
50Ω
Conditions
rbb'·Cc
NF
This product might cause chip aging and breakdown under the large electrified environment.
Please consider to design ESD protection circuit.
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c
○
2009 ROHM Co., Ltd. All rights reserved.
1/3
2009.12 - Rev.C
0.3Min.
(1) Emitter
(2) Base
(3) Collector
2SC5661 / 2SC4725 / 2SC4082 / 2SC3837K
Electrical
characteristic curves
500
DC CURRENT TRANSFER RATIO :h
FE
COLLECTOR SATURATION VOLTAGE :V
CE(sat)
(mV)
Data Sheet
200
100
50
OUTPUT CAPACITANCE :C
oB
(pF)
FEEDBACK CAPACITANCE :C
re
(pF)
Ta=25°C
V
CE
=10V
500
5.0
Ta=25°C
I
C
/I
B
=5
Ta=25°C
f=1MHz
I
E
=0A
200
100
50
2.0
Cob
1.0
0.5
Cre
20
10
20
10
0.2
0.1
0.1 0.2
0.5
1
2
5
10 20
50
0.1 0.2
0.5
1
2
5
10 20
50
0.1 0.2
0.5
1
2
5
10 20
50
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
Fig.1 DC current gain vs. collector current
Fig.2 Collector-emitter saturation voltage
vs. collector current
Fig.3 Capacitance vs. reverse bias voltage
5000
COLLECTOR TO BASE TIME CONSTANT : C
c
rbb' (ps)
TRANSITION FREQUENCY : f
T
(MHz)
Ta=25°C
V
CE
=10V
50
INSERTION GAIN : IS
21el
(dB)
25
Ta=25°C
V
CE
=10V
I
C
=10mA
2000
1000
500
20
20
10
5
2
15
10
5
200
100
2
1
−0.1 −0.2
−0.5
−1 −2
−5
−10 −20
−50
Ta=25°C
V
CE
=10V
f=31.8MHz
0
0.1
0.2
0.5
1
2
5
10
0.1 0.2
0.5
1
2
5
10 20
50
EMITTER CURRENT : I
E
(mA)
FREQUENCY : f (GHz)
COLLECTOR CURRENT : I
C
(mA)
Fig.4 Gain bandwidth product vs. emitter current
Fig.6 Insertion gain vs. frequency
Fig.5 Collector to base time constance
vs. collector current
25
INSERTION GAIN : IS
21el
(dB)
INSERTION GAIN : IS
21el
(dB)
20
Ta=25°C
V
CE
=12V
f=200MHz
30
25
20
15
10
5
0
Ta=25°C
I
C
=2mA
f=200MHz
Ta=25°C
V
CE
=12V
f=200MHz
15
10
NOISE FIGURE : NF(dB)
2
20
2
10
5
0
0.5
1
2
5
10
20
50
0
2
4
6
8
10
12
0
0.1 0.2
0.5
1
2
5
10 20
50
COLLECTOR CURRENT : Ic (mA)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
COLLECTOR CURRENT : I
C
(mA)
Fig.7 Insertion gain vs. collector current
Fig.8 Insertion gain vs. collector voltage
Fig.9 Noise factor vs. collector current
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○
2009 ROHM Co., Ltd. All rights reserved.
2/3
2009.12 - Rev.C
Notice
Notes
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The content specified herein is for the purpose of introducing ROHM's products (hereinafter
"Products"). If you wish to use any such Product, please be sure to refer to the specifications,
which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specified in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
information, ROHM shall bear no responsibility for such damage.
The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
implicitly, any license to use or exercise intellectual property or other rights held by ROHM and
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