EEWORLDEEWORLDEEWORLD

Part Number

Search

BUK962R8-30B

Description
Power Field-Effect Transistor
CategoryDiscrete semiconductor    The transistor   
File Size342KB,15 Pages
ManufacturerNexperia
Websitehttps://www.nexperia.com
Environmental Compliance
Download Datasheet Parametric Compare View All

BUK962R8-30B Overview

Power Field-Effect Transistor

BUK962R8-30B Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerNexperia
package instructionD2PAK-3
Reach Compliance Codenot_compliant
Other featuresLOGIC LEVEL COMPATIBLE
Avalanche Energy Efficiency Rating (Eas)2300 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (ID)75 A
Maximum drain-source on-resistance0.003 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSSO-G2
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)245
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)950 A
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename
Nexperia.
Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use
http://www.nexperia.com
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use
salesaddresses@nexperia.com
(email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
-
© Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via
salesaddresses@nexperia.com).
Thank you for your cooperation and
understanding,
Kind regards,
Team Nexperia

BUK962R8-30B Related Products

BUK962R8-30B 934057089118
Description Power Field-Effect Transistor Power Field-Effect Transistor
Is it Rohs certified? conform to conform to
Maker Nexperia Nexperia
package instruction D2PAK-3 PLASTIC, D2PAK-3
Reach Compliance Code not_compliant not_compliant
Other features LOGIC LEVEL COMPATIBLE LOGIC LEVEL COMPATIBLE
Avalanche Energy Efficiency Rating (Eas) 2300 mJ 2300 mJ
Shell connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 30 V 30 V
Maximum drain current (ID) 75 A 75 A
Maximum drain-source on-resistance 0.003 Ω 0.003 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PSSO-G2 R-PSSO-G2
JESD-609 code e3 e3
Humidity sensitivity level 1 1
Number of components 1 1
Number of terminals 2 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum pulsed drain current (IDM) 950 A 950 A
surface mount YES YES
Terminal surface Tin (Sn) Tin (Sn)
Terminal form GULL WING GULL WING
Terminal location SINGLE SINGLE
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Ask: Regarding the running error in ccs. (Please help me)
I compiled and loaded a program in ccs2.2, but the following problem occurs as soon as I run it. I don’t know what the problem is? Can’t Run Target CPU: Invalid Destination port address in the trp The...
kiney Embedded System
Development of LED chip technology
Since Nakamura invented the high-brightness GaN blue LED in 1993, LED technology and applications have made rapid progress. There are two reasons for this: 1) the emergence of a full range of RGB LEDs...
LED123 LED Zone
C program about intelligent shuttle car
[i=s]This post was last edited by paulhyde on 2014-9-15 03:30[/i] :faint: I am currently working on an electronic design. The car has four motors and uses a grooved photoelectric sensor to measure spe...
ettpiao Electronics Design Contest
How to implement a path selection dialog box using C# under wince?
I want to let the user select a directory. Is there a directory dialog window similar to FolderBrowserDialogg in C# under WinCE? How to do it? !...
beiyouwx Embedded System
Please advise on the interrupt operation...
The board is finally out, but I can't enter the interrupt during debugging. The system clock and external interrupt are the same. I will post the configuration code of the system clock first. I hope t...
chao2641 stm32/stm8

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 810  77  2869  1563  550  17  2  58  32  12 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号