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D5810N06TVFHOSA1

Description
Rectifier Diode, 1 Phase, 1 Element, 5800A, 600V V(RRM), Silicon,
CategoryDiscrete semiconductor    diode   
File Size236KB,8 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
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D5810N06TVFHOSA1 Overview

Rectifier Diode, 1 Phase, 1 Element, 5800A, 600V V(RRM), Silicon,

D5810N06TVFHOSA1 Parametric

Parameter NameAttribute value
MakerInfineon
package instructionO-CEDB-N2
Reach Compliance Codecompliant
ECCN codeEAR99
applicationGENERAL PURPOSE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.47 V
JESD-30 codeO-CEDB-N2
Maximum non-repetitive peak forward current70000 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature180 °C
Minimum operating temperature-40 °C
Maximum output current5800 A
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formDISK BUTTON
Maximum repetitive peak reverse voltage600 V
Maximum reverse current100000 µA
surface mountYES
Terminal formNO LEAD
Terminal locationEND
N
Netz-Gleichrichterdiode
Rectifier Diode
Datenblatt / Data sheet
D5810N
T
vj
= -40°C... T
vj max
V
RRM
I
FRMSM
T
C
= 58 °C
T
C
= 130 °C
T
C
= 55 °C,
θ
= 180°sin, t
P
= 10 ms
I
FAVM
I
FAVM
I
FRMS
T
vj
= 25 °C, t
P
= 10 ms
T
vj
= T
vj max
t
P
= 10 ms
T
vj
= 25 °C, t
P
= 10 ms
T
vj
= T
vj max
, t
P
= 10 ms
I
FSM
I²t
400 V
600 V
9100 A
5800 A
3000 A
5880 A
9240 A
81000 A
70000 A
32800 10³A²s
24500 10³A²s
Elektrische Eigenschaften / Electrical properties
Höchstzulässige Werte / maximum rated values
Kenndaten
Periodische Spitzensperrspannung
repetitive peak reverse voltages
Durchlaßstrom-Grenzeffektivwert
maximum RMS on-state current
Dauergrenzstrom
average on-state current
Dauergrenzstrom
average on-state current
Durchlaßstrom-Effektivwert
RMS on-state current
Stoßstrom-Grenzwert
surge current
Grenzlastintegral
I²t-value
Elektrische Eigenschaften
Charakteristische Werte / Characteristic values
Durchlaßspannung
on-state voltage
Schleusenspannung
threshold voltage
Ersatzwiderstand
slope resistance
Durchlaßkennlinie
1500 A
i
F
29000 A
on-state characteristic
T
vj
= T
vj max
, i
F
= 18,0 kA
T
vj
= T
vj max
, i
F
= 6,0 kA
T
vj
= T
vj max
T
vj
= T
vj max
T
vj
= T
vj max
v
F
V
(TO)
r
T
A=
B=
C=
D=
max.
max.
1,47 V
0,92 V
0,7 V
0,04 mΩ
v
F
=
A
+
B
i
F
+
C
ln ( i
F
+
1 )
+
D
Sperrstrom
reverse current
i
F
vj
vj max
R
RRM
4,617E-01
2,002E-05
7,441E-03
4,190E-03
max.
100 mA
T =T
,v =V
Thermische Eigenschaften
i
R
Thermische Eigenschaften / Thermal properties
Innerer Wärmewiderstand
thermal resistance, junction to case
Kühlfläche / cooling surface
beidseitig / two-sided,
θ
= 180°sin
beidseitig / two-sided, DC
Anode / anode,
θ
= 180°sin
Anode / anode, DC
Kathode / cathode,
θ
= 180°sin
Kathode / cathode, DC
Kühlfläche / cooling surface
beidseitig / two-sided
einseitig / single-sided
R
thJC
max.
max.
max.
max.
max.
max.
max.
max.
0,0166
0,0160
0,0326
0,0320
0,0326
0,0320
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
Übergangs-Wärmewiderstand
thermal resistance, case to heatsink
Höchstzulässige Sperrschichttemperatur
maximum junction temperature
Betriebstemperatur
operating temperature
Lagertemperatur
storage temperature
R
thCH
T
vj max
T
c op
T
stg
0,0025 °C/W
0,0050 °C/W
180 °C
-40...+180 °C
-40...+180 °C
prepared by: H.Sandmann
approved by: M.Leifeld
date of publication:
revision:
2009-05-13
1.0
IFBIP D AEC / 2008-10-13, H.Sandmann
A 57/08
Seite/page
1/8

D5810N06TVFHOSA1 Related Products

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Description Rectifier Diode, 1 Phase, 1 Element, 5800A, 600V V(RRM), Silicon, DIODE GEN PURP 400V 5800A DIODE GEN PURP 200V 5800A DIODE GEN PURP 600V 5800A
Maker Infineon Infineon Infineon Infineon
Reach Compliance Code compliant compliant compliant compliant
ECCN code EAR99 EAR99 EAR99 EAR99
application GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE
Configuration SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
JESD-30 code O-CEDB-N2 O-XEDB-N2 O-XEDB-N2 O-CEDB-N2
Maximum non-repetitive peak forward current 70000 A 81000 A 81000 A 70000 A
Number of components 1 1 1 1
Phase 1 1 1 1
Number of terminals 2 2 2 2
Maximum operating temperature 180 °C 180 °C 180 °C 180 °C
Maximum output current 5800 A 5800 A 5800 A 5800 A
Package body material CERAMIC, METAL-SEALED COFIRED UNSPECIFIED UNSPECIFIED CERAMIC, METAL-SEALED COFIRED
Package shape ROUND ROUND ROUND ROUND
Package form DISK BUTTON DISK BUTTON DISK BUTTON DISK BUTTON
Maximum repetitive peak reverse voltage 600 V 600 V 600 V 600 V
surface mount YES YES YES YES
Terminal form NO LEAD NO LEAD NO LEAD NO LEAD
Terminal location END END END END
Is it Rohs certified? - conform to conform to conform to
Peak Reflow Temperature (Celsius) - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Maximum time at peak reflow temperature - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
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