BYV34-500
4 June 2014
TO
-2
20A
B
Dual ultrafast power diodes
Product data sheet
1. General description
Dual ultrafast power diodes in a SOT78 (TO-220AB) plastic package.
2. Features and benefits
•
•
•
•
•
•
Fast switching
High thermal cycling performance
Low forward voltage drop
Low switching loss
Low thermal resistance
Soft recovery characteristic
3. Applications
•
•
Discontinuous Current Mode (DCM) Power Factor Correction (PFC)
Output rectifiers in high-frequency switched-mode power supplies
4. Quick reference data
Table 1.
Symbol
V
RRM
I
O(AV)
Quick reference data
Parameter
repetitive peak reverse
voltage
average output current SQW; δ = 0.5; T
mb
≤ 115 °C; both
diodes conducting;
Fig. 1; Fig. 2
Static characteristics
V
F
t
rr
forward voltage
I
F
= 10 A; T
j
= 150 °C;
Fig. 4
I
F
= 1 A; V
R
= 30 V; dI
F
/dt = 100 A/µs;
T
j
= 25 °C;
Fig. 7; Fig. 5
-
0.87
1.05
V
Dynamic characteristics
reverse recovery time
-
50
60
ns
Conditions
Min
-
-
Typ
-
-
Max
500
20
Unit
V
A
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NXP Semiconductors
BYV34-500
Dual ultrafast power diodes
5. Pinning information
Table 2.
Pin
1
2
3
Pinning information
Symbol Description
A1
K
A2
anode 1
cathode
anode 2
Simplified outline
mb
Graphic symbol
A1
K
A2
sym125
1 2 3
TO-220AB (SOT78)
6. Ordering information
Table 3.
Ordering information
Package
Name
BYV34-500
TO-220AB
Description
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
Version
SOT78
Type number
BYV34-500
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
4 June 2014
2 / 10
NXP Semiconductors
BYV34-500
Dual ultrafast power diodes
7. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
RRM
V
RWM
V
R
I
O(AV)
I
FRM
I
FSM
Parameter
repetitive peak reverse voltage
crest working reverse voltage
reverse voltage
average output current
repetitive peak forward current
non-repetitive peak forward
current
T
mb
≤ 138 °C; DC
SQW; δ = 0.5; T
mb
≤ 115 °C; both
diodes conducting;
Fig. 1; Fig. 2
SQW; δ = 0.5; t
p
= 25 µs; T
mb
≤ 115 °C;
per diode
SIN; t
p
= 10 ms; T
j(init)
= 25 °C; per
diode
SIN; t
p
= 8.3 ms; T
j(init)
= 25 °C; per
diode
T
stg
T
j
20
P
tot
(W)
16
Conditions
Min
-
-
-
-
-
-
-
-40
-
Max
500
500
500
20
20
120
132
150
150
003aaj489
Unit
V
V
V
A
A
A
A
°C
°C
storage temperature
junction temperature
003aaj488
12
P
tot
(W)
8
2.2
2.8
4.0
4
a = 1.57
1.9
δ=1
12
0.2
0.1
4
0.5
8
0
0
4
8
12
I
F(AV)
(A)
16
0
0
2
4
6
8
10
I
F(AV)
(A)
I
F(AV)
= I
F(RMS)
× √δ
V
o
= 0.94 V; R
s
= 0.01 Ω
Fig. 1.
Forward power dissipation as a function of
Fig. 2.
average forward current; square waveform; per
diode; maximum values
a = form factor = I
F(RMS)
/ I
F(AV)
V
o
= 0.94 V; R
s
= 0.01 Ω
Forward power dissipation as a function of
average forward current; sinusoidal waveform;
per diode; maximum values
BYV34-500
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
4 June 2014
3 / 10
NXP Semiconductors
BYV34-500
Dual ultrafast power diodes
8. Thermal characteristics
Table 5.
Symbol
R
th(j-mb)
Thermal characteristics
Parameter
thermal resistance
from junction to
mounting base
thermal resistance
from junction to
ambient
10
Z
th(j-mb)
(K/W)
1
Conditions
with heatsink compound; per diode;
Fig. 3
with heatsink compound; both diodes
conducting
in free air
Min
-
-
-
Typ
-
-
60
Max
2.4
1.6
-
Unit
K/W
K/W
K/W
R
th(j-a)
001aag912
10
- 1
P
10
- 2
t
p
10
- 3
10
- 6
10
- 5
10
- 4
10
- 3
10
- 2
10
- 1
1
t
T
t
p
(s)
10
δ=
t
p
T
Fig. 3.
Transient thermal impedance from junction to mounting base per diode as a function of pulse width
BYV34-500
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
4 June 2014
4 / 10
NXP Semiconductors
BYV34-500
Dual ultrafast power diodes
9. Characteristics
Table 6.
Symbol
V
F
Characteristics
Parameter
forward voltage
Conditions
I
F
= 20 A; T
j
= 25 °C;
Fig. 4
I
F
= 10 A; T
j
= 150 °C;
Fig. 4
I
R
reverse current
V
R
= 500 V; T
j
= 25 °C
V
R
= 500 V; T
j
= 100 °C
Dynamic characteristics
Q
r
t
rr
I
RM
V
FRM
recovered charge
reverse recovery time
peak reverse recovery
current
forward recovery
voltage
30
I
F
(A)
20
Min
-
-
-
-
Typ
1.1
0.87
10
0.2
Max
1.35
1.05
50
0.6
Unit
V
V
µA
mA
Static characteristics
I
F
= 2 A; V
R
= 30 V; dI
F
/dt = 20 A/s;
T
j
= 25 °C;
Fig. 5; Fig. 6
I
F
= 1 A; V
R
= 30 V; dI
F
/dt = 100 A/µs;
T
j
= 25 °C;
Fig. 7; Fig. 5
I
F
= 10 A; V
R
= 30 V; dI
F
/dt = 50 A/µs;
T
j
= 100 °C;
Fig. 8; Fig. 5
I
F
= 10 A; dI
F
/dt = 10 A/µs; T
j
= 25 °C;
Fig. 9
003aaj487
-
-
-
-
50
50
4
2.5
60
60
5
-
nC
ns
A
V
I
F
dl
F
dt
t
rr
time
(1)
(2)
(3)
25 %
Q
r
100 %
10
I
R
0
0
0.5
1
1.5
2
I
RM
003aac562
V
F
(V)
Fig. 5.
Reverse recovery definitions; ramp recovery
V
o
= 0.94 V; R
s
= 0.01 Ω
(1) T
j
= 150 °C; typical values
(2) T
j
= 150 °C; maximum values
(3) T
j
= 25 °C; maximum values
Fig. 4.
Forward current as a function of forward
voltage; per diode
BYV34-500
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
4 June 2014
5 / 10
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