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2SC5000_04

Description
Power Amplifier Applications
File Size105KB,3 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
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2SC5000_04 Overview

Power Amplifier Applications

2SC5000
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC5000
Power Amplifier Applications
Unit: mm
Low collector saturation voltage: V
CE (sat)
= 0.4 V (max) (I
C
= 5 A)
Maximum Ratings
(Tc = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
Rating
80
50
7
10
1
25
150
−55
to 150
Unit
V
V
V
A
A
W
°C
°C
JEDEC
JEITA
TOSHIBA
2-10R1A
Electrical Characteristics
(Tc = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Saturation voltage
Collector-emitter
Base-emitter
Symbol
I
CBO
I
EBO
V
(BR) CEO
h
FE (1)
V
CE (sat)
V
BE (sat)
f
T
C
ob
Test Condition
V
CB
= 70 V, I
E
= 0
V
EB
= 7 V, I
C
= 0
I
C
= 10 mA, I
B
= 0
V
CE
= 1 V, I
C
= 1 A
I
C
= 5 A, I
B
= 0.25 A
I
C
= 5 A, I
B
= 0.25 A
V
CE
= 1 V, I
C
= 1 A
V
CB
= 10 V, I
E
= 0, f = 1 MHz
Weight: 1.7 g (typ.)
Min
50
120
Typ.
0.19
0.96
90
90
Max
1
1
400
0.4
1.4
Unit
µA
µA
V
V
MHz
pF
Transition frequency
Collector output capacitance
Marking
C5000
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
1
2004-07-26

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2SC5000_04 2SC5000
Description Power Amplifier Applications Power Amplifier Applications

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