TPSMB6.8 thru TPSMB43A
Vishay Semiconductors
formerly General Semiconductor
Surface Mount Automotive
Transient Voltage Suppressors
DO-214AA (SMB)
Cathode Band
d*
nte
ate
P
0.155 (3.94)
0.130 (3.30)
Dimensions in inches
and (millimeters)
Breakdown Voltage
6.8 to 43V
Peak Pulse Power
600W
Mounting Pad Layout
0.106 MAX
(2.69 MAX)
0.086 (2.20)
0.077 (1.95)
Available in
uni-directional
only
0.083 MIN
(2.10 MIN)
0.050 MIN
(1.27 MIN)
0.220 REF
0.180 (4.57)
0.160 (4.06)
0.012 (0.305)
0.006 (0.152)
0.096 (2.44)
0.084 (2.13)
0.060 (1.52)
0.030 (0.76)
0.220 (5.59)
0.205 (5.21)
*Patent #’s
4,980,315
5,166,769
5,278,094
Features
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
• Easy pick and place
• Low profile package
• Built-in strain relief ideal for automated placement
• Exclusive patented PAR
®
oxide passivated
chip construction
• 600W peak pulse power capability with a 10/1000ms
waveform, repetition rate (duty cycle): 0.01%
• Excellent clamping capability
• Low incremental surge resistance
• Very fast response time
• For devices with V
(BR)
≥
10V I
D
is typically less
than 2.0mA at T
A
= 150°C
• Designed for under the hood surface mount
applications
• High temperature soldering:
250°C/10 seconds at terminals
A
0.008
(0.203)
Max.
Mechanical Data
Case:
JEDEC DO-214AA molded plastic body over
passivated junction
Terminals:
Solder plated, solderable per
MIL-STD-750, Method 2026
Polarity:
The color band denotes the cathode,
which is positive with respect to the anode under
normal TVS operation
Mounting Position:
Any
Weight:
0.003 oz., 0.093 g
Packaging codes/options:
5/3.2K per 13" Reel (12mm tape), 38.4K/box
2/750 EA per 7" Reel (12mm tape), 15K/box
Maximum Ratings and Thermal Characteristics
(T
Parameter
Peak pulse power dissipation with a 10/1000µs
waveform
(1)(2)
(Fig. 1)
Peak pulse current with a 10/1000µs waveform
(1)
Instantaneous forward voltage at 50A
(3)
Operating junction and storage temperature range
(Fig. 3)
= 25°C unless otherwise noted)
Symbol
P
PPM
I
PPM
I
FSM
V
F
T
J
, T
STG
Value
Minimum 600
See Next Table
75
3.5
–65 to +185
Unit
W
A
A
V
°C
Peak forward surge current 8.3ms single half sine-wave
(2)(3)
Notes:
(1) Non-repetitive current pulse, per Fig.3 and derated above T
A
= 25°C per Fig. 2
(2) Mounted on 0.2 x 0.2” (5.0 x 5.0mm) land areas per figure
(3) Mounted on 8.3ms single half sine-wave duty cycle = 4 pulses per minute maximum
Document Number 88406
06-May-02
www.vishay.com
1
TPSMB6.8 thru TPSMB43A
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Device
TPSMB6.8
TPSMB6.8A
TPSMB7.5
TPSMB7.5A
TPSMB8.2
TPSMB8.2A
TPSMB9.1
TPSMB9.1A
TPSMB10
TPSMB10A
TPSMB11
TPSMB11A
TPSMB12
TPSMB12A
TPSMB13
TPSMB13A
TPSMB15
TPSMB15A
TPSMB16
TPSMB16A
TPSMB18
TPSMB18A
TPSMB20
TPSMB20A
TPSMB22
TPSMB22A
TPSMB24
TPSMB24A
TPSMB27
TPSMB27A
TPSMB30
TPSMB30A
TPSMB33
TPSMB33A
TPSMB36
TPSMB36A
TPSMB39
TPSMB39A
TPSMB43
TPSMB43A
Device
Marking
Code
KDP
KEP
KFP
KGP
KHP
KKP
KLP
KMP
KNP
KPP
KQP
KRP
KSP
KTP
KUP
KVP
KWP
KXP
KYP
KZP
LDP
LEP
LFP
LGP
LHP
LKP
LLP
LMP
LNP
LPP
LQP
LRP
LSP
LTP
LUP
LVP
LWP
LXP
LYP
LZP
Breakdown Voltage
V
(BR)
(1)
at I
T
(V)
Min.
6.12
6.45
6.75
7.13
7.38
7.79
8.19
8.65
9.00
9.50
9.90
10.5
10.8
11.4
11.7
12.4
13.5
14.3
14.4
15.2
16.2
17.1
18.0
19.0
19.8
20.9
21.6
22.8
24.3
25.7
27.0
28.5
29.7
31.4
32.4
34.2
35.1
37.1
38.7
40.9
Max.
7.48
7.14
8.25
7.88
9.02
8.61
10.0
9.55
11.0
10.5
12.1
11.6
13.2
12.6
14.3
13.7
16.5
15.8
17.6
16.8
19.8
18.9
22.0
21.0
24.2
23.1
26.4
25.2
29.7
28.4
33.0
31.5
36.3
34.7
39.6
37.8
42.9
41.0
47.3
45.2
Test
Current
I
T
(mA)
10
10
10
10
10
10
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Stand-off
Voltage
V
WM
(V)
5.50
5.80
6.05
6.40
6.63
7.02
7.37
7.78
8.10
8.55
8.92
9.40
9.72
10.2
10.5
11.1
12.1
12.8
12.9
13.6
14.5
15.3
16.2
17.1
17.8
18.8
19.4
20.5
21.8
23.1
24.3
25.6
26.8
28.2
29.1
30.8
31.6
33.3
34.8
36.8
Maximum
Reverse
Leakage
at V
WM
I
D
(µA)
500
500
250
250
100
100
25
25
5.0
5.0
2.0
2.0
2.0
2.0
2.0
2.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
T
J
= 150°C Maximum
Maximum Peak Pulse
Reverse
Surge
Leakage
Current
at V
WM
I
PPM
(2)
I
D
(µA)
(A)
1000
1000
500
500
200
200
50
50
20
20
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
55.6
57.1
51.3
53.1
48.0
49.6
43.5
44.8
40.0
41.4
37.0
38.5
34.7
35.9
31.6
33.0
27.3
28.3
25.5
26.7
22.6
23.8
20.6
21.7
18.8
19.6
17.3
18.1
15.3
16.0
13.8
14.5
12.6
13.1
11.5
12.0
10.6
11.1
9.7
10.1
Maximum
Clamping
Voltage
at I
PPM
Vc (V)
10.8
10.5
11.7
11.3
12.5
12.1
13.8
13.4
15.0
14.5
16.2
15.6
17.3
16.7
19.0
18.2
22.0
21.2
23.5
22.5
26.5
25.2
29.1
27.7
31.9
30.6
34.7
33.2
39.1
37.5
43.5
41.4
47.7
45.7
52.0
49.9
56.4
53.9
61.9
59.3
Notes:
(1) V
(BR)
measured after I
T
applied for 300µs, I
T
=square wave pulse or equivalent
(2) Surge current waveform per Fig. 3 and derate per Fig. 2
(3) All terms and symbols are consistent with ANSI/IEEE C62.35
www.vishay.com
2
Document Number 88406
06-May-02
TPSMB6.8 thru TPSMB43A
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves
(T
A
= 25°C unless otherwise noted)
Fig.1 – Peak Pulse Power Rating Curve
T
A
= 25°C
Non-repetitive pulse
waveform shown in Fig. 3
10
Fig. 2 – Pulse Derating Curve
Peak Pulse Power (P
PP
) or Current (I
PP
)
Derating in Percentage (%)
100
100
P
PPM,
Peak Power (KW)
75
50
1.0
25
0.2 x 0.2" (5.0 x 5.0mm)
copper pad areas
0.1
0.1µs
1.0µs
10µs
100µs
1.0ms
10ms
0
0
50
100
150
200
td, Pulse Width, sec.
T
A
, Ambient Temperature (°C)
Fig. 3 – Pulse Waveform
150
10,000
tr = 10µsec.
Peak Value
I
PPM
Fig. 4 – Typical Junction Capacitance
T
J
= 25°C
f = 1 MHz
Vsig = 50mVp-p
1,000
V
R
measured
at zero bias
I
PPM
— Peak Pulse Current, % I
RSM
100
Half Value — IPP
2
I
PPM
50
10/1000µsec. Waveform
as defined by R.E.A.
C
J
, Junction Capacitance, pF
T
J
= 25°C
Pulse Width (td)
is defined as the point
where the peak current
decays to 50% of I
PPM
100
V
R
measured
at stand-off
voltage, V
WM
10
1
10
100
200
td
0
0
1.0
2.0
3.0
4.0
t — Time (ms)
V
(BR)
, Breakdown Voltage (V)
Fig. 5 – Maximum Non-Repetitive
Peak Forward Surge Current
100
I
FSM,
Peak Forward Surge Current (A)
T
J
= T
J
max
8.3ms single half sine-wave
(JEDEC method)
10
1
10
100
Number of Cycles at 60 Hz
Document Number 88406
06-May-02
www.vishay.com
3
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