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CMF10A

Description
SURFACE MOUNT UNI-DIRECTIONAL SILICON TRANSIENT VOLTAGE SUPPRESSOR 200 WATTS
CategoryDiscrete semiconductor    diode   
File Size604KB,4 Pages
ManufacturerCentral Semiconductor
Download Datasheet Parametric View All

CMF10A Overview

SURFACE MOUNT UNI-DIRECTIONAL SILICON TRANSIENT VOLTAGE SUPPRESSOR 200 WATTS

CMF10A Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerCentral Semiconductor
Parts packaging codeSOD
package instructionR-PDSO-F2
Contacts2
Manufacturer packaging codeSOD-123F
Reach Compliance Code_compli
ECCN codeEAR99
Other featuresLOW LEAKAGE CURRENT
Maximum breakdown voltage12.3 V
Minimum breakdown voltage11.1 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeR-PDSO-F2
JESD-609 codee0
Maximum non-repetitive peak reverse power dissipation200 W
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Certification statusNot Qualified
Maximum repetitive peak reverse voltage10 V
surface mountYES
technologyAVALANCHE
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
CMF5.0A
THRU
CMF170A
SURFACE MOUNT
UNI-DIRECTIONAL SILICON
TRANSIENT VOLTAGE SUPPRESSOR
200 WATTS, 5.0 THRU 170 VOLTS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMF5.0 Series
of Transient Voltage Suppressors are designed to
protect sensitive electronic components from high
voltage, high-energy transients. High surge capability,
low impedance, low clamping voltage, fast response
time and small size make this an excellent choice for
industrial/consumer applications, such as cell phones,
power supplies and portable devices.
MARKING CODE: SEE ELECTRICAL
CHARACTERISTICS TABLE
FEATURES:
SOD-123F CASE
APPLICATIONS:
Digital cameras
Cell phones and accessories
Desktop and laptop computers
PDAs
Stand-off voltage 5 to 170 Volts
Very low leakage current
Low clamping voltage
200 Watt peak power dissipation
Small, high thermal efficiency, SOD-123F flat lead package
SYMBOL
PPP
VESD
TJ, Tstg
UNITS
W
kV
°C
MAXIMUM RATINGS:
(TA=25°C)
Peak Pulse Power (10/1000µs Waveform)
ESD Voltage (HBM)
Operating and Storage Junction Temperature
200
25
-65 to +150
ELECTRICAL CHARACTERISTICS:
(TJ=25°C unless otherwise noted)
Reverse
Stand-Off
Voltage
Type
VRWM
V
CMF5.0A
CMF6.0A
CMF6.5A
CMF7.0A
CMF7.5A
CMF8.0A
CMF8.5A
CMF9.0A
CMF10A
CMF11A
CMF12A
CMF13A
CMF14A
CMF15A
CMF16A
CMF17A
CMF18A
5.0
6.0
6.5
7.0
7.5
8.0
8.5
9.0
10
11
12
13
14
15
16
17
18
Breakdown
Voltage
VBR @ IT
MIN
V
6.4
6.67
7.22
7.78
8.33
8.89
9.44
10
11.1
12.2
13.3
14.4
15.6
16.7
17.8
18.9
20
MAX
V
7.0
7.37
7.98
8.6
9.21
9.83
10.4
11.1
12.3
13.5
14.7
15.9
17.2
18.5
19.7
20.9
22.1
Test
Current
IT
mA
10
10
10
10
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Reverse
Leakage
Current
IR @ VRWM
µA
400
400
250
100
50
25
10
5.0
2.5
2.5
2.5
1.0
1.0
1.0
1.0
1.0
1.0
Maximum
Clamping
Voltage
VC @ IPP
V
9.2
10.3
11.2
12
12.9
13.6
14.4
15.4
17
18.2
19.9
21.5
23.2
24.4
26
27.6
29.2
Peak
Pulse
Current
IPP
A
21.7
19.4
17.9
16.7
15.5
14.7
13.9
13
11.8
11
10.1
9.3
8.6
8.2
7.7
7.2
6.8
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