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CMLD6263A_10

Description
0.015 A, 70 V, 4 ELEMENT, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size521KB,3 Pages
ManufacturerCentral Semiconductor
Download Datasheet Parametric Compare View All

CMLD6263A_10 Overview

0.015 A, 70 V, 4 ELEMENT, SILICON, SIGNAL DIODE

CMLD6263A_10 Parametric

Parameter NameAttribute value
Number of terminals6
Number of components4
Processing package descriptionPICOMINI-6
stateACTIVE
packaging shapeRECTANGULAR
Package SizeSMALL OUTLINE
surface mountYes
Terminal formFLAT
terminal coatingTIN LEAD
Terminal locationDUAL
Packaging MaterialsPLASTIC/EPOXY
CraftsmanshipSCHOTTKY
structure2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Diode component materialsSILICON
Maximum power consumption limit0.2500 W
Diode typeSIGNAL DIODE
Maximum reverse recovery time0.0050 us
Maximum repetitive peak reverse voltage70 V
Maximum average forward current0.0150 A
CMLD6263A
CMLD6263C
CMLD6263S
SURFACE MOUNT
DUAL PAIR, HIGH VOLTAGE
SILICON SCHOTTKY DIODES
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMLD6263 Series
incorporates two pair, high voltage, low VF Silicon
Diodes in a space saving SOT-563 surface mount
package. These diodes are designed for fast switching
applications requiring a low forward voltage drop.
MARKING CODES:
CMLD6263A: 63A
CMLD6263C: 63C
CMLD6263S: 63S
SOT-563 CASE
FEATURES:
• High Voltage (70V)
• Low Forward Voltage
• Various Dual Pair Configurations
MAXIMUM RATINGS:
(TA=25°C)
Peak Repetitive Reverse Voltage
Continuous Forward Current
Peak Forward Surge Current, tp=1.0s
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VRRM
IF
IFSM
PD
TJ, Tstg
Θ
JA
70
15
50
250
-65 to +150
500
UNITS
V
mA
mA
mW
°C
°C/W
ELECTRICAL CHARACTERISTICS PER DIODE:
(TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
TYP
MAX
IR
BVR
VF
CT
trr
VR=50V
IR=10μA
IF=1.0mA
VR=0, f=1.0MHz
IR=IF=10mA, Irr=1.0mA, RL=100Ω
98
70
395
410
2.0
5.0
200
UNITS
nA
V
mV
pF
ns
R2 (18-January 2010)

CMLD6263A_10 Related Products

CMLD6263A_10 CMLD6263A CMLD6263C
Description 0.015 A, 70 V, 4 ELEMENT, SILICON, SIGNAL DIODE 0.015 A, 70 V, 4 ELEMENT, SILICON, SIGNAL DIODE 0.015 A, 70 V, 4 ELEMENT, SILICON, SIGNAL DIODE
Number of terminals 6 6 6
Number of components 4 4 4
surface mount Yes YES YES
Terminal form FLAT FLAT FLAT
Terminal location DUAL DUAL DUAL
Diode component materials SILICON SILICON SILICON
Diode type SIGNAL DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum reverse recovery time 0.0050 us 0.005 µs 0.005 µs
Maximum repetitive peak reverse voltage 70 V 70 V 70 V
Is it lead-free? - Contains lead Contains lead
Is it Rohs certified? - incompatible incompatible
package instruction - PICOMINI-6 R-PDSO-F6
Contacts - 6 6
Reach Compliance Code - _compli _compli
ECCN code - EAR99 EAR99
Configuration - 2 BANKS, COMMON ANODE, 2 ELEMENTS 2 BANKS, COMMON CATHODE, 2 ELEMENTS
Maximum forward voltage (VF) - 0.41 V 0.41 V
JESD-30 code - R-PDSO-F6 R-PDSO-F6
JESD-609 code - e0 e0
Maximum operating temperature - 150 °C 150 °C
Minimum operating temperature - -65 °C -65 °C
Maximum output current - 0.015 A 0.015 A
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY
Package shape - RECTANGULAR RECTANGULAR
Package form - SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) - NOT SPECIFIED NOT SPECIFIED
Maximum power dissipation - 0.25 W 0.25 W
Certification status - Not Qualified Not Qualified
Maximum reverse current - 0.2 µA 0.2 µA
Reverse test voltage - 50 V 50 V
technology - SCHOTTKY SCHOTTKY
Terminal surface - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Maximum time at peak reflow temperature - NOT SPECIFIED NOT SPECIFIED
Base Number Matches - 1 1
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