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Datasheet> All Categories > Discrete semiconductor> The transistor> 2SC5437-FB-A
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2SC5437-FB-A

Description
L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, ULTRA SUPER MINIMOLD PACKAGE-3
CategoryDiscrete semiconductor    The transistor   
File Size60KB，11 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Environmental Compliance
Download Datasheet Parametric View All

2SC5437-FB-A Overview

L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, ULTRA SUPER MINIMOLD PACKAGE-3

2SC5437-FB-A Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
package instructionSMALL OUTLINE, R-PDSO-F3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresLOW NOISE
Shell connectionCOLLECTOR
Maximum collector current (IC)0.1 A
Collector-based maximum capacity0.8 pF
Collector-emitter maximum voltage6 V
ConfigurationSINGLE
highest frequency bandL BAND
JESD-30 codeR-PDSO-F3
JESD-609 codee6
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN BISMUTH
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)9500 MHz
Base Number Matches1

2SC5437-FB-A Preview

DATA SHEET
NPN SILICON RF TRANSISTOR
2SC5437
NPN EPITAXIAL SILICON TRANSISTOR
FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD
FEATURES
• Contains same chip as 2SC5195
• Flat-lead 3-pin thin-type ultra super minimold package
ORDERING INFORMATION
Part Number
2SC5437
2SC5437-T1
Quantity
50 pcs (Non reel)
3 kpcs/reel
Supplying Form
• 8 mm wide embossed taping
• Pin 3 (collector) face the perforation side of the tape
Remark
To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (T
A
= +25°C)
°
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
Note
Ratings
9
6
2
100
125
150
−65
to +150
Unit
V
V
V
mA
mW
°C
°C
T
j
T
stg
Note
Free air
Because this product uses high-frequency technology, avoid excessive static electricity, etc.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10105EJ01V0DS (1st edition)
(Previous No. P13146EJ1V0DS00)
Date Published February 2002 CP(K)
Printed in Japan
The mark
•
shows major revised points.
©
NEC Corporation 1998
©
NEC Compound Semiconductor Devices 2002
2SC5437
ELECTRICAL CHARACTERISTICS (T
A
= +25°C)
°
Parameter
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Gain Bandwidth Product (1)
Gain Bandwidth Product (2)
Insertion Power Gain (1)
Insertion Power Gain (2)
Noise Figure (1)
Noise Figure (2)
Reverse Transfer Capacitance
Symbol
I
CBO
I
EBO
h
FE
Note 1
Test Conditions
V
CB
= 5 V, I
E
= 0 mA
V
EB
= 1 V, I
C
= 0 mA
V
CE
= 1 V, I
C
= 3 mA
V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
V
CE
= 3 V, I
C
= 20 mA, f = 2 GHz
V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
V
CE
= 3 V, I
C
= 20 mA, f = 2 GHz
V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
V
CE
= 3 V, I
C
= 7 mA, f = 2 GHz
V
CB
= 1 V, I
E
= 0 mA, f = 1 MHz
MIN.
–
–
80
4.0
–
3.0
–
–
–
–
TYP.
–
–
–
5.0
9.5
4.0
8.0
1.9
1.7
0.7
MAX.
100
100
145
–
–
–
–
2.5
–
0.8
Unit
nA
nA
–
GHz
GHz
dB
dB
dB
dB
pF
f
T
f
T
S
21e
2
S
21e
2
NF
NF
C
re
Note 2
Notes 1.
Pulse measurement: PW
≤
350
µ
s, Duty Cycle
≤
2%
2.
Collector to base capacitance when the emitter grounded
h
FE
CLASSIFICATION
Rank
Marking
h
FE
Value
EB
TS
80 to 110
FB
TT
100 to 145
2
Data Sheet PU10105EJ01V0DS
2SC5437
TYPICAL CHARACTERISTICS (Unless otherwise specified, T
A
= +25°C)
°
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Reverse Transfer Capacitance C
re
(pF)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
1.0
f = 1 MHz
150
Total Power Dissipation P
tot
(mW)
Free Air
125
100
75
50
25
0.5
0.2
0
25
50
75
100
125
150
0.1
1
10
Collector to Base Voltage V
CB
(V)
100
Ambient Temperature T
A
(˚C)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
V
CE
= 1 V
Collector Current I
C
(mA)
Collector Current I
C
(mA)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
30
200
µ
A
25
20
15
10
5
180
µ
A
160
µ
A
140
µ
A
120
µ
A
100
µ
A
80
µ
A
60
µ
A
40
µ
A
I
B
= 20
µ
A
10
1
0.1
0.01
0
0.5
Base to Emitter Voltage V
BE
(V)
1.0
0
1
2
3
4
5
6
7
Collector to Emitter Voltage V
CE
(V)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
200
Gain Bandwidth Product f
T
(GHz)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
8
7
6
5
4
3
2
1
0
1
2
5
10
V
CE
= 1 V
f = 2 GHz
V
CE
= 1 V
DC Current Gain h
FE
100
0
0.1
1
10
100
Collector Current I
C
(mA)
Collector Current I
C
(mA)
Data Sheet PU10105EJ01V0DS
3
2SC5437
INSERTION POWER GAIN, MAG
vs. FREQUENCY
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
INSERTION POWER GAIN
vs. COLLECTOR CURRENT
6
Insertion Power Gain |S
21e
|
2
(dB)
30
25
20
15
MAG
10
5
0
0.1
|S
21e
|
2
V
CE
= 1 V
I
C
= 5 mA
5
4
3
2
1
0
V
CE
= 1 V
f = 2 GHz
1.0
Frequency f (GHz)
10.0
1
2
5
10
Collector Current I
C
(mA)
NOISE FIGURE vs. COLLECTOR CURRENT
4
V
CE
= 1 V
f = 2 GHz
Noise Figure NF (dB)
3
2
1
0
1
2
5
10
Collector Current I
C
(mA)
Remark
The graphs indicate nominal characteristics.
4
Data Sheet PU10105EJ01V0DS
2SC5437
S-PARAMETERS
V
CE
= 1 V, I
C
= 1 mA, Z
O
= 50
Ω
Frequency
(GHz)
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
3.0
S
11
MAG.
0.903
0.746
0.675
0.608
0.561
0.541
0.539
0.525
0.510
0.523
0.548
0.562
0.573
0.584
0.605
ANG.
(deg.)
−35.0
−66.3
−93.2
−112.2
−128.6
−143.1
−153.8
−162.9
−173.3
176.9
170.0
164.7
159.6
154.7
150.7
MAG.
3.343
2.695
2.223
1.934
1.661
1.432
1.283
1.168
1.041
0.938
0.869
0.825
0.774
0.702
0.656
S
21
ANG.
(deg.)
151.0
127.5
108.3
94.8
84.9
75.1
66.2
59.9
53.8
47.9
40.8
35.6
32.7
29.4
24.5
MAG.
0.092
0.155
0.189
0.200
0.207
0.209
0.203
0.191
0.175
0.165
0.159
0.154
0.150
0.151
0.153
S
12
ANG.
(deg.)
66.0
46.6
33.9
24.4
17.1
13.0
12.1
11.5
10.6
9.4
11.7
16.0
21.5
27.9
32.5
MAG.
0.939
0.781
0.662
0.600
0.553
0.510
0.473
0.451
0.443
0.431
0.420
0.432
0.457
0.467
0.468
S
22
ANG.
(deg.)
−18.2
−32.4
−45.0
−53.4
−58.4
−62.9
−68.7
−75.7
−82.6
−89.8
−99.0
−109.5
−117.6
−124.6
−132.2
V
CE
= 1 V, I
C
= 3 mA, Z
O
= 50
Ω
Frequency
(GHz)
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
3.0
S
11
MAG.
0.748
0.584
0.526
0.486
0.469
0.477
0.483
0.473
0.473
0.494
0.516
0.530
0.542
0.556
0.575
ANG.
(deg.)
−56.1
−97.0
−123.2
−141.4
−156.1
−167.1
−174.4
178.3
169.6
162.6
157.7
153.7
149.7
146.0
143.3
MAG.
7.879
5.518
4.133
3.325
2.790
2.327
2.050
1.832
1.617
1.447
1.325
1.255
1.184
1.085
1.005
S
21
ANG.
(deg.)
139.2
114.6
98.1
88.3
81.2
74.1
67.2
62.4
57.8
52.8
46.8
42.0
39.1
36.5
31.7
MAG.
0.080
0.114
0.129
0.135
0.141
0.148
0.155
0.157
0.160
0.164
0.174
0.185
0.197
0.205
0.210
S
12
ANG.
(deg.)
56.6
40.2
33.4
30.0
28.6
28.9
31.6
34.6
36.3
36.2
36.6
37.6
39.6
41.2
41.6
MAG.
0.811
0.552
0.420
0.346
0.292
0.255
0.235
0.223
0.218
0.212
0.221
0.242
0.261
0.277
0.289
S
22
ANG.
(deg.)
−35.7
−58.2
−73.5
−82.6
−89.6
−97.0
−105.6
−114.0
−122.0
−131.8
−142.3
−150.4
−155.7
−161.8
−167.8
V
CE
= 1 V, I
C
= 5 mA, Z
O
= 50
Ω
Frequency
(GHz)
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
3.0
S
11
MAG.
0.598
0.430
0.375
0.347
0.340
0.351
0.358
0.356
0.362
0.383
0.404
0.421
0.435
0.452
0.472
ANG.
(deg.)
−68.1
−109.0
−132.9
−150.0
−163.6
−173.4
−179.8
173.5
165.7
159.3
155.2
151.7
148.1
144.8
142.5
MAG.
10.072
6.323
4.527
3.563
2.965
2.454
2.157
1.927
1.699
1.524
1.397
1.321
1.256
1.159
1.072
S
21
ANG.
(deg.)
129.5
106.6
93.0
85.1
79.6
73.8
68.0
64.0
60.1
55.8
50.4
46.0
43.5
41.2
37.1
MAG.
0.066
0.086
0.097
0.105
0.114
0.126
0.138
0.146
0.153
0.162
0.174
0.189
0.204
0.214
0.220
S
12
ANG.
(deg.)
50.2
39.1
37.2
37.2
38.8
40.4
42.9
45.9
47.5
46.9
45.9
45.6
46.7
47.4
46.9
MAG.
0.684
0.419
0.311
0.251
0.214
0.195
0.190
0.190
0.190
0.197
0.216
0.236
0.255
0.271
0.287
S
22
ANG.
(deg.)
−50.7
−77.9
−95.4
−107.0
−118.5
−129.8
−139.5
−147.9
−156.7
−166.0
−173.4
−178.0
178.3
173.9
169.6
Data Sheet PU10105EJ01V0DS
5
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