CMPD6001
CMPD6001A
CMPD6001C
CMPD6001S
SURFACE MOUNT
LOW LEAKAGE
SILICON SWITCHING DIODE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPD6001 series
types are silicon switching diodes manufactured by
the epitaxial planar process, designed for switching
applications requiring an extremely low leakage diode.
SOT-23 CASE
The following
CMPD6001
CMPD6001A
CMPD6001C
CMPD6001S
configurations are available:
SINGLE
DUAL, COMMON ANODE
DUAL, COMMON CATHODE
DUAL, IN SERIES
MARKING
MARKING
MARKING
MARKING
SYMBOL
VR
VRRM
IF
IFRM
IFSM
IFSM
PD
TJ, Tstg
Θ
JA
CODE:
CODE:
CODE:
CODE:
ULO
ULA
ULC
ULS
UNITS
V
V
mA
mA
A
A
mW
°C
°C/W
MAXIMUM RATINGS:
(TA=25°C)
Continuous Reverse Voltage
Peak Repetitive Reverse Voltage
Continuous Forward Current
Peak Repetitive Forward Current
Peak Forward Surge Current, tp=1.0μs
Peak Forward Surge Current, tp=1.0s
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
75
100
250
250
4.0
1.0
350
-65 to +150
357
ELECTRICAL CHARACTERISTICS PER DIODE:
(TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
MAX
IR
VR=75V
500
BVR
IR=100μA
100
VF
VF
VF
CT
trr
IF=1.0mA
IF=10mA
IF=100mA
VR=0, f =1.0MHz
IR=IF=10mA, RL=100Ω, Rec. to 1.0mA
0.85
0.95
1.1
2.0
3.0
UNITS
pA
V
V
V
V
pF
μs
R4 (27-January 2010)
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