CMPD6001_10 datasheet, PDF - EEWORLD Datasheet

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CMPD6001_10: DescriptionSURFACE MOUNT LOW LEAKAGE SILICON SWITCHING DIODE; File Size655KB，3 Pages; ManufacturerCentral Semiconductor

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CMPD6001_10 Overview

SURFACE MOUNT LOW LEAKAGE SILICON SWITCHING DIODE

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CMPD6001

CMPD6001A

CMPD6001C

CMPD6001S

SURFACE MOUNT

LOW LEAKAGE

SILICON SWITCHING DIODE

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMPD6001 series

types are silicon switching diodes manufactured by

the epitaxial planar process, designed for switching

applications requiring an extremely low leakage diode.

SOT-23 CASE

The following

CMPD6001

CMPD6001A

CMPD6001C

CMPD6001S

configurations are available:

SINGLE

DUAL, COMMON ANODE

DUAL, COMMON CATHODE

DUAL, IN SERIES

MARKING

SYMBOL

VR

VRRM

IF

IFRM

IFSM

PD

TJ, Tstg

Θ

JA

CODE:

ULO

ULA

ULC

ULS

UNITS

V

mA

A

mW

°C

°C/W

MAXIMUM RATINGS:

(TA=25°C)

Continuous Reverse Voltage

Peak Repetitive Reverse Voltage

Continuous Forward Current

Peak Repetitive Forward Current

Peak Forward Surge Current, tp=1.0μs

Peak Forward Surge Current, tp=1.0s

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

75

100

250

4.0

1.0

350

-65 to +150

357

ELECTRICAL CHARACTERISTICS PER DIODE:

(TA=25°C unless otherwise noted)

SYMBOL TEST CONDITIONS

MIN

MAX

IR

VR=75V

500

BVR

IR=100μA

100

VF

CT

trr

IF=1.0mA

IF=10mA

IF=100mA

VR=0, f =1.0MHz

IR=IF=10mA, RL=100Ω, Rec. to 1.0mA

0.85

0.95

1.1

2.0

3.0

UNITS

pA

V

pF

μs

R4 (27-January 2010)

CMPD6001_10 Related Products

	CMPD6001_10	CMPD6001A	CMPD6001C
Description	SURFACE MOUNT LOW LEAKAGE SILICON SWITCHING DIODE	SURFACE MOUNT LOW LEAKAGE SILICON SWITCHING DIODE	SURFACE MOUNT LOW LEAKAGE SILICON SWITCHING DIODE
Is it lead-free?	-	Contains lead	Contains lead
Is it Rohs certified?	-	incompatible	incompatible
Maker	-	Central Semiconductor	Central Semiconductor
Parts packaging code	-	SOT-23	SOT-23
Contacts	-	3	3
Reach Compliance Code	-	_compli	_compli
Configuration	-	COMMON ANODE, 2 ELEMENTS	COMMON CATHODE, 2 ELEMENTS
Diode component materials	-	SILICON	SILICON
Diode type	-	RECTIFIER DIODE	RECTIFIER DIODE
JESD-30 code	-	R-PDSO-G3	R-PDSO-G3
JESD-609 code	-	e0	e0
Number of components	-	2	2
Number of terminals	-	3	3
Maximum operating temperature	-	150 °C	150 °C
Minimum operating temperature	-	-65 °C	-65 °C
Maximum output current	-	0.25 A	0.25 A
Package body material	-	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	-	RECTANGULAR	RECTANGULAR
Package form	-	SMALL OUTLINE	SMALL OUTLINE
Maximum power dissipation	-	0.35 W	0.35 W
Maximum repetitive peak reverse voltage	-	100 V	100 V
Maximum reverse recovery time	-	3 µs	3 µs
surface mount	-	YES	YES
Terminal surface	-	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	-	GULL WING	GULL WING
Terminal location	-	DUAL	DUAL

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