CMPD6001C datasheet, PDF - EEWORLD Datasheet

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CMPD6001C: DescriptionSURFACE MOUNT LOW LEAKAGE SILICON SWITCHING DIODE; CategoryDiscrete semiconductor diode; File Size655KB，3 Pages; ManufacturerCentral Semiconductor

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CMPD6001C Overview

SURFACE MOUNT LOW LEAKAGE SILICON SWITCHING DIODE

CMPD6001C Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Central Semiconductor
Parts packaging code	SOT-23
Contacts	3
Reach Compliance Code	_compli
Configuration	COMMON CATHODE, 2 ELEMENTS
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
JESD-30 code	R-PDSO-G3
JESD-609 code	e0
Number of components	2
Number of terminals	3
Maximum operating temperature	150 °C
Minimum operating temperature	-65 °C
Maximum output current	0.25 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Maximum power dissipation	0.35 W
Maximum repetitive peak reverse voltage	100 V
Maximum reverse recovery time	3 µs
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal location	DUAL

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CMPD6001

CMPD6001A

CMPD6001C

CMPD6001S

SURFACE MOUNT

LOW LEAKAGE

SILICON SWITCHING DIODE

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMPD6001 series

types are silicon switching diodes manufactured by

the epitaxial planar process, designed for switching

applications requiring an extremely low leakage diode.

SOT-23 CASE

The following

CMPD6001

CMPD6001A

CMPD6001C

CMPD6001S

configurations are available:

SINGLE

DUAL, COMMON ANODE

DUAL, COMMON CATHODE

DUAL, IN SERIES

MARKING

SYMBOL

VR

VRRM

IF

IFRM

IFSM

PD

TJ, Tstg

Θ

JA

CODE:

ULO

ULA

ULC

ULS

UNITS

V

mA

A

mW

°C

°C/W

MAXIMUM RATINGS:

(TA=25°C)

Continuous Reverse Voltage

Peak Repetitive Reverse Voltage

Continuous Forward Current

Peak Repetitive Forward Current

Peak Forward Surge Current, tp=1.0μs

Peak Forward Surge Current, tp=1.0s

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

75

100

250

4.0

1.0

350

-65 to +150

357

ELECTRICAL CHARACTERISTICS PER DIODE:

(TA=25°C unless otherwise noted)

SYMBOL TEST CONDITIONS

MIN

MAX

IR

VR=75V

500

BVR

IR=100μA

100

VF

CT

trr

IF=1.0mA

IF=10mA

IF=100mA

VR=0, f =1.0MHz

IR=IF=10mA, RL=100Ω, Rec. to 1.0mA

0.85

0.95

1.1

2.0

3.0

UNITS

pA

V

pF

μs

R4 (27-January 2010)

CMPD6001C Related Products

	CMPD6001C	CMPD6001A	CMPD6001_10
Description	SURFACE MOUNT LOW LEAKAGE SILICON SWITCHING DIODE	SURFACE MOUNT LOW LEAKAGE SILICON SWITCHING DIODE	SURFACE MOUNT LOW LEAKAGE SILICON SWITCHING DIODE
Is it lead-free?	Contains lead	Contains lead	-
Is it Rohs certified?	incompatible	incompatible	-
Maker	Central Semiconductor	Central Semiconductor	-
Parts packaging code	SOT-23	SOT-23	-
Contacts	3	3	-
Reach Compliance Code	_compli	_compli	-
Configuration	COMMON CATHODE, 2 ELEMENTS	COMMON ANODE, 2 ELEMENTS	-
Diode component materials	SILICON	SILICON	-
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	-
JESD-30 code	R-PDSO-G3	R-PDSO-G3	-
JESD-609 code	e0	e0	-
Number of components	2	2	-
Number of terminals	3	3	-
Maximum operating temperature	150 °C	150 °C	-
Minimum operating temperature	-65 °C	-65 °C	-
Maximum output current	0.25 A	0.25 A	-
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	-
Package shape	RECTANGULAR	RECTANGULAR	-
Package form	SMALL OUTLINE	SMALL OUTLINE	-
Maximum power dissipation	0.35 W	0.35 W	-
Maximum repetitive peak reverse voltage	100 V	100 V	-
Maximum reverse recovery time	3 µs	3 µs	-
surface mount	YES	YES	-
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	-
Terminal form	GULL WING	GULL WING	-
Terminal location	DUAL	DUAL	-

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