CMPT992_10 datasheet, PDF - EEWORLD Datasheet

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CMPT992_10: DescriptionSURFACE MOUNT PNP LOW NOISE SILICON TRANSISTOR; File Size332KB，3 Pages; ManufacturerCentral Semiconductor

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CMPT992_10 Overview

SURFACE MOUNT PNP LOW NOISE SILICON TRANSISTOR

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CMPT992

CMPT992P

CMPT992F

CMPT992E

SURFACE MOUNT PNP LOW NOISE

SILICON TRANSISTOR

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMPT992 types

are PNP silicon low noise transistors manufactured by

the epitaxial planar process, epoxy molded in a surface

mount package, designed for low noise amplifier

applications where a high BVCEO is required.

MARKING CODE: SEE MARKING CODE TABLE ON

FOLLOWING PAGE.

SOT-23 CASE

MAXIMUM RATINGS:

(TA=25°C)

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

SYMBOL

VCBO

VCEO

VEBO

TJ, Tstg

110

5.0

350

-65 to +150

357

UNITS

°C

°C/W

ELECTRICAL CHARACTERISTICS:

(TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

IEBO

VEB=5.0V

BVCBO

IC=100μA

110

BVCEO

BVEBO

VCE(SAT)

VBE(ON)

Cob

IC=1.0mA

IE=10μA

IC=10mA, IB=1.0mA

VCE=6.0V, IC=1.0mA

VCB=30V, IE=0, f=1.0MHz

VCE=5.0V, IC=100μA, RS=10kΩ,

f=10Hz to 15.7KHz

CMPT992

MIN MAX

150

200

800

CMPT992P

MIN MAX

150

200

400

110

5.0

MAX

UNITS

MHz

CMPT992E

MIN MAX

150

400

800

0.30

0.55

0.65

3.0

CMPT992F

MIN MAX

150

300

600

hFE

VCE=6.0V, IC=100μA

VCE=6.0V, IC=1.0mA

R2 (1-February 2010)

CMPT992_10 Related Products

	CMPT992_10	CMPT992	CMPT992F	CMPT992E	CMPT992P
Description	SURFACE MOUNT PNP LOW NOISE SILICON TRANSISTOR	SURFACE MOUNT PNP LOW NOISE SILICON TRANSISTOR	SURFACE MOUNT PNP LOW NOISE SILICON TRANSISTOR	SURFACE MOUNT PNP LOW NOISE SILICON TRANSISTOR	SURFACE MOUNT PNP LOW NOISE SILICON TRANSISTOR
Is it lead-free?	-	Contains lead	Contains lead	Contains lead	Contains lead
Is it Rohs certified?	-	incompatible	incompatible	incompatible	incompatible
Maker	-	Central Semiconductor	Central Semiconductor	Central Semiconductor	Central Semiconductor
Parts packaging code	-	SOT-23	SOT-23	SOT-23	SOT-23
package instruction	-	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3
Contacts	-	3	3	3	3
Reach Compliance Code	-	_compli	_compli	_compli	_compli
ECCN code	-	EAR99	EAR99	EAR99	EAR99
Other features	-	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE
Maximum collector current (IC)	-	0.05 A	0.05 A	0.05 A	0.05 A
Collector-emitter maximum voltage	-	110 V	110 V	110 V	110 V
Configuration	-	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	-	200	300	400	200
JESD-30 code	-	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
JESD-609 code	-	e0	e0	e0	e0
Number of components	-	1	1	1	1
Number of terminals	-	3	3	3	3
Maximum operating temperature	-	150 °C	150 °C	150 °C	150 °C
Package body material	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	-	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	-	PNP	PNP	PNP	PNP
Certification status	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	-	YES	YES	YES	YES
Terminal surface	-	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD
Terminal form	-	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	-	DUAL	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
transistor applications	-	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	-	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	-	50 MHz	50 MHz	50 MHz	50 MHz

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