CMPT992E datasheet, PDF - EEWORLD Datasheet

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CMPT992E: DescriptionSURFACE MOUNT PNP LOW NOISE SILICON TRANSISTOR; CategoryDiscrete semiconductor The transistor; File Size332KB，3 Pages; ManufacturerCentral Semiconductor

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CMPT992E Overview

SURFACE MOUNT PNP LOW NOISE SILICON TRANSISTOR

CMPT992E Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Central Semiconductor
Parts packaging code	SOT-23
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	3
Reach Compliance Code	_compli
ECCN code	EAR99
Other features	LOW NOISE
Maximum collector current (IC)	0.05 A
Collector-emitter maximum voltage	110 V
Configuration	SINGLE
Minimum DC current gain (hFE)	400
JESD-30 code	R-PDSO-G3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	YES
Terminal surface	TIN LEAD
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	50 MHz

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CMPT992

CMPT992P

CMPT992F

CMPT992E

SURFACE MOUNT PNP LOW NOISE

SILICON TRANSISTOR

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMPT992 types

are PNP silicon low noise transistors manufactured by

the epitaxial planar process, epoxy molded in a surface

mount package, designed for low noise amplifier

applications where a high BVCEO is required.

MARKING CODE: SEE MARKING CODE TABLE ON

FOLLOWING PAGE.

SOT-23 CASE

MAXIMUM RATINGS:

(TA=25°C)

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

SYMBOL

VCBO

VCEO

VEBO

IC

PD

TJ, Tstg

Θ

JA

110

5.0

50

350

-65 to +150

357

UNITS

V

mA

mW

°C

°C/W

ELECTRICAL CHARACTERISTICS:

(TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

IEBO

VEB=5.0V

BVCBO

IC=100μA

110

BVCEO

BVEBO

VCE(SAT)

VBE(ON)

fT

Cob

NF

IC=1.0mA

IE=10μA

IC=10mA, IB=1.0mA

VCE=6.0V, IC=1.0mA

VCB=30V, IE=0, f=1.0MHz

VCE=5.0V, IC=100μA, RS=10kΩ,

f=10Hz to 15.7KHz

CMPT992

MIN MAX

150

-

200

800

CMPT992P

MIN MAX

150

-

200

400

110

5.0

MAX

30

UNITS

nA

V

MHz

pF

dB

CMPT992E

MIN MAX

150

-

400

800

0.30

0.55

50

0.65

3.0

CMPT992F

MIN MAX

150

-

300

600

hFE

VCE=6.0V, IC=100μA

VCE=6.0V, IC=1.0mA

R2 (1-February 2010)

CMPT992E Related Products

	CMPT992E	CMPT992	CMPT992F	CMPT992_10	CMPT992P
Description	SURFACE MOUNT PNP LOW NOISE SILICON TRANSISTOR	SURFACE MOUNT PNP LOW NOISE SILICON TRANSISTOR	SURFACE MOUNT PNP LOW NOISE SILICON TRANSISTOR	SURFACE MOUNT PNP LOW NOISE SILICON TRANSISTOR	SURFACE MOUNT PNP LOW NOISE SILICON TRANSISTOR
Is it lead-free?	Contains lead	Contains lead	Contains lead	-	Contains lead
Is it Rohs certified?	incompatible	incompatible	incompatible	-	incompatible
Maker	Central Semiconductor	Central Semiconductor	Central Semiconductor	-	Central Semiconductor
Parts packaging code	SOT-23	SOT-23	SOT-23	-	SOT-23
package instruction	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	-	SMALL OUTLINE, R-PDSO-G3
Contacts	3	3	3	-	3
Reach Compliance Code	_compli	_compli	_compli	-	_compli
ECCN code	EAR99	EAR99	EAR99	-	EAR99
Other features	LOW NOISE	LOW NOISE	LOW NOISE	-	LOW NOISE
Maximum collector current (IC)	0.05 A	0.05 A	0.05 A	-	0.05 A
Collector-emitter maximum voltage	110 V	110 V	110 V	-	110 V
Configuration	SINGLE	SINGLE	SINGLE	-	SINGLE
Minimum DC current gain (hFE)	400	200	300	-	200
JESD-30 code	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	-	R-PDSO-G3
JESD-609 code	e0	e0	e0	-	e0
Number of components	1	1	1	-	1
Number of terminals	3	3	3	-	3
Maximum operating temperature	150 °C	150 °C	150 °C	-	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	-	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	-	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED
Polarity/channel type	PNP	PNP	PNP	-	PNP
Certification status	Not Qualified	Not Qualified	Not Qualified	-	Not Qualified
surface mount	YES	YES	YES	-	YES
Terminal surface	TIN LEAD	TIN LEAD	TIN LEAD	-	TIN LEAD
Terminal form	GULL WING	GULL WING	GULL WING	-	GULL WING
Terminal location	DUAL	DUAL	DUAL	-	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER	-	AMPLIFIER
Transistor component materials	SILICON	SILICON	SILICON	-	SILICON
Nominal transition frequency (fT)	50 MHz	50 MHz	50 MHz	-	50 MHz

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