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5962-8869002LA

Description
512X8 OTPROM, 140ns, CDIP24, SIDE BRAZED, DIP-24
Categorystorage    storage   
File Size38KB,8 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
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5962-8869002LA Overview

512X8 OTPROM, 140ns, CDIP24, SIDE BRAZED, DIP-24

5962-8869002LA Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerRenesas Electronics Corporation
Parts packaging codeDIP
package instructionDIP, DIP24,.3
Contacts24
Reach Compliance Codenot_compliant
ECCN codeEAR99
Maximum access time140 ns
JESD-30 codeR-CDIP-T24
JESD-609 codee0
memory density4096 bit
Memory IC TypeOTP ROM
memory width8
Number of functions1
Number of terminals24
word count512 words
character code512
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize512X8
Package body materialCERAMIC, METAL-SEALED COFIRED
encapsulated codeDIP
Encapsulate equivalent codeDIP24,.3
Package shapeRECTANGULAR
Package formIN-LINE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply5 V
Certification statusNot Qualified
Filter level38535Q/M;38534H;883B
Maximum seat height5.08 mm
Maximum standby current0.0001 A
Maximum slew rate0.02 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyCMOS
Temperature levelMILITARY
Terminal surfaceTin/Lead (Sn/Pb) - hot dipped
Terminal formTHROUGH-HOLE
Terminal pitch2.54 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width7.62 mm
HM-6642
March 1997
512 x 8 CMOS PROM
Description
The HM-6642 is a 512 x 8 CMOS NiCr fusible link
Programmable Read Only Memory in the popular 24 pin,
byte wide pinout. Synchronous circuit design techniques
combine with CMOS processing to give this device high
speed performance with very low power dissipation.
On-chip address latches are provided, allowing easy
interfacing with recent generation microprocessors that use
multiplexed address/data bus structures, such as the 8085.
The output enable controls, both active low and active high,
further simplify microprocessor system interfacing by
allowing output data bus control independent of the chip
enable control. The data output latches allow the use of the
HM-6642 in high speed pipelined architecture systems, and
also in synchronous logic replacement functions.
Applications for the HM-6642 CMOS PROM include low
power handheld microprocessor based instrumentation and
communications systems, remote data acquisition and
processing systems, processor control store, and synchro-
nous logic replacement.
All bits are manufactured storing a logical “0” and can be
selectively programmed for a logical “1” at any bit location.
Features
• Low Power Standby and Operating Power
- ICCSB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .100µA
- ICCOP . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA at 1MHz
• Fast Access Time. . . . . . . . . . . . . . . . . . . . . . 120/200ns
• Industry Standard Pinout
• Single 5.0V Supply
• CMOS/TTL Compatible Inputs
• Field Programmable
• Synchronous Operation
• On-Chip Address Latches
• Separate Output Enable
Ordering Information
PACKAGE
SBDIP
SMD#
SLIM SBDIP
SMD#
CLCC
SMD#
TEMPERATURE RANGE
-40
o
C to +85
o
C
-55
o
C to +125
o
C
-40
o
C to +85
o
C
-55
o
C to +125
o
C
-40
o
C to +85
o
C
-55
o
C to +125
o
C
120ns
HM1-6642B-9
5962-8869002JA
HM6-6642B-9
5962-8869002LA
-
5962-88690023A
200ns
HM1-6642-9
5962-8869001JA
HM6-6642-9
5962-8869001LA
HM4-6642-9
5962-88690013A
PKG. NO.
D24.6
D24.6
D24.3
D24.3
J28.A
J28.A
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
©
Intersil Corporation 1999
File Number
3012.1
6-1

5962-8869002LA Related Products

5962-8869002LA 5962-88690023A HM6-6642B-9 HM4-6642-9 HM6-6642-9 HM1-6642B-9
Description 512X8 OTPROM, 140ns, CDIP24, SIDE BRAZED, DIP-24 512X8 OTPROM, 140ns, CQCC28 512X8 OTPROM, 140ns, CDIP24 512X8 OTPROM, 220ns, CQCC28, CERAMIC, LCC-28 512X8 OTPROM, 220ns, CDIP24 512X8 OTPROM, 140ns, CDIP24
Maker Renesas Electronics Corporation Renesas Electronics Corporation Renesas Electronics Corporation Renesas Electronics Corporation Renesas Electronics Corporation Renesas Electronics Corporation
package instruction DIP, DIP24,.3 , DIP, DIP24,.3 QCCN, LCC28,.45SQ DIP, DIP24,.3 DIP, DIP24,.6
Reach Compliance Code not_compliant unknown not_compliant not_compliant not_compliant not_compliant
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Maximum access time 140 ns 140 ns 140 ns 220 ns 220 ns 140 ns
JESD-30 code R-CDIP-T24 S-CQCC-N28 R-CDIP-T24 S-CQCC-N28 R-CDIP-T24 R-CDIP-T24
JESD-609 code e0 e0 e0 e0 e0 e0
memory density 4096 bit 4096 bit 4096 bit 4096 bit 4096 bit 4096 bit
Memory IC Type OTP ROM OTP ROM OTP ROM OTP ROM OTP ROM OTP ROM
memory width 8 8 8 8 8 8
Number of functions 1 1 1 1 1 1
Number of terminals 24 28 24 28 24 24
word count 512 words 512 words 512 words 512 words 512 words 512 words
character code 512 512 512 512 512 512
Operating mode ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature 125 °C 125 °C 85 °C 85 °C 85 °C 85 °C
Minimum operating temperature -55 °C -55 °C -40 °C -40 °C -40 °C -40 °C
organize 512X8 512X8 512X8 512X8 512X8 512X8
Package body material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
Package shape RECTANGULAR SQUARE RECTANGULAR SQUARE RECTANGULAR RECTANGULAR
Package form IN-LINE CHIP CARRIER IN-LINE CHIP CARRIER IN-LINE IN-LINE
Parallel/Serial PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum supply voltage (Vsup) 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V
Minimum supply voltage (Vsup) 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V
Nominal supply voltage (Vsup) 5 V 5 V 5 V 5 V 5 V 5 V
surface mount NO YES NO YES NO NO
technology CMOS CMOS CMOS CMOS CMOS CMOS
Temperature level MILITARY MILITARY INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL
Terminal surface Tin/Lead (Sn/Pb) - hot dipped TIN LEAD Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form THROUGH-HOLE NO LEAD THROUGH-HOLE NO LEAD THROUGH-HOLE THROUGH-HOLE
Terminal location DUAL QUAD DUAL QUAD DUAL DUAL
Is it Rohs certified? incompatible - incompatible incompatible incompatible incompatible
Parts packaging code DIP - DIP - DIP DIP
Contacts 24 - 24 - 24 24
encapsulated code DIP - DIP QCCN DIP DIP
Encapsulate equivalent code DIP24,.3 - DIP24,.3 LCC28,.45SQ DIP24,.3 DIP24,.6
power supply 5 V - 5 V 5 V 5 V 5 V
Maximum standby current 0.0001 A - 0.0001 A 0.0001 A 0.0001 A 0.0001 A
Maximum slew rate 0.02 mA - 0.046 mA 0.029 mA 0.029 mA 0.046 mA
Terminal pitch 2.54 mm - 2.54 mm 1.27 mm 2.54 mm 2.54 mm
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