CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications
PARAMETER
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
DSS
V
GS(TH)
TEST CONDITIONS
I
D
= 1mA, V
GS
= 0V
V
GS
= V
DS
,
I
D
= 1mA
T
C
= -55
o
C
T
C
= 25
o
C
T
C
= 125
o
C
T
C
= 25
o
C
T
C
= 125
o
C
T
C
= 25
o
C
T
C
= 125
o
C
T
C
= 25
o
C
T
C
= 125
o
C
MIN
250
-
2.0
1.0
-
-
-
-
-
-
-
-
-
-
-
V
GS
= 0V to 12V
V
DD
= 125V,
I
D
= 43A
-
-
-
V
GS
= 0V to 20V
V
GS
= 0V to 2V
I
D
= 43A, V
DS
= 15V
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
-
-
-
-
-
-
-
TYP
-
-
-
-
-
-
-
-
-
0.041
-
-
-
-
-
115
35
35
195
12
7
6100
875
35
-
MAX
-
5.5
4.5
-
25
250
100
200
2.15
0.047
0.092
35
70
70
15
140
45
45
-
-
-
-
-
-
0.65
UNITS
V
V
V
V
µA
µA
nA
nA
V
Ω
Ω
ns
ns
ns
ns
nC
nC
nC
nC
nC
V
pF
pF
pF
o
C/W
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
I
DSS
I
GSS
V
DS(ON)
r
DS(ON)12
t
d(ON)
t
r
t
d(OFF)
t
f
Q
g(12)
Q
gs
Q
gd
Q
g(20)
Q
g(TH)
V
(PLATEAU)
C
ISS
C
OSS
C
RSS
R
θ
JC
V
DS
= 200V,
V
GS
= 0V
V
GS
=
±30V
V
GS
= 12V, I
D
= 43A
I
D
= 27A,
V
GS
= 12V
Gate to Source Leakage Current
Drain to Source On-State Voltage
Drain to Source On Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate Charge Source
Gate Charge Drain
Gate Charge at 20V
Threshold Gate Charge
Plateau Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
V
DD
= 125V, I
D
= 43A,
R
L
= 2.9Ω, V
GS
= 12V,
R
GS
= 2.35Ω
2
FSPJ264R, FSPJ264F
Source to Drain Diode Specifications
PARAMETER
Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
SYMBOL
V
SD
t
rr
Q
RR
T
C
= 25
o
C, Unless Otherwise Specified
MIN
PARAMETER
Drain to Source Breakdown Volts
Gate to Source Threshold Volts
Gate to Body Leakage
Zero Gate Leakage
Drain to Source On-State Volts
Drain to Source On Resistance
NOTES:
1. Pulse test, 300µs Max.
2. Absolute value.
3. Insitu Gamma bias must be sampled for both V
GS
= 12V, V
DS
= 0V and V
GS
= 0V, V
DS
= 80% BV
DSS
.
(Note 3)
(Note 3)
(Notes 2, 3)
(Note 3)
(Notes 1, 3)
(Notes 1, 3)
SYMBOL
BV
DSS
V
GS(TH)
I
GSS
I
DSS
V
DS(ON)
r
DS(ON)12
TEST CONDITIONS
V
GS
= 0, I
D
= 1mA
V
GS
= V
DS
, I
D
= 1mA
V
GS
=
±30V,
V
DS
= 0V
V
GS
= 0, V
DS
= 200V
V
GS
= 12V, I
D
= 43A
V
GS
= 12V, I
D
= 27A
MAX
MIN
MAX
UNITS
V
V
nA
µA
V
Ω
100K RAD
250
-
2.0
4.5
-
100
-
-
-
25
2.15
0.047
300K RAD
250
-
1.5
4.5
-
100
-
-
-
50
2.62
0.056
TEST CONDITIONS
I
SD
= 43A
I
SD
= 43A, dI
SD
/dt = 100A/µs
MIN
-
-
-
TYP
-
-
6.8
MAX
1.2
590
-
UNITS
V
ns
µC
Electrical Specifications up to 300K RAD
Single Event Effects (SEB, SEGR)
Note 4
ENVIRONMENT
(NOTE 5)
ION
TYPICAL LET
TYPICAL
SPECIES
(MeV/mg/cm)
RANGE (µ)
Br
37
36
Br
I
I
Au
Au
37
60
60
82
82
36
32
32
28
28
APPLIED
V
GS
BIAS
(V)
-10
-15
-2
-8
0
-5
(NOTE 6)
MAXIMUM
V
DS
BIAS (V)
250
200
200
150
150
100
TEST
Single Event Effects Safe Operating Area
SYMBOL
SEESOA
NOTES:
4. Testing conducted at Brookhaven National Labs.
5. Fluence = 1E5 ions/cm
2
(Typical), T = 25
o
C.
6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).
Performance Curves
Unless Otherwise Specified
LET = 37MeV/mg/cm
2
, RANGE = 36µ
LET = 60MeV/mg/cm
2
, RANGE = 32µ
LET = 82MeV/mg/cm
2
, RANGE = 28µ
280
240
200
V
DS
(V)
V
DS
(V)
160
120
80
40
0
0
-4
-8
V
GS
(V)
-12
-16
-20
FLUENCE = 1E5 IONS/cm
2
(TYPICAL)
TEMP = 25
o
C
280
240
200
160
120
80
LET = 82 GOLD
40
0
0
-5
-10
-15
V
GS
(V)
-20
-25
-30
LET = 60 IODINE
LET = 37 BROMINE
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA
FIGURE 2. TYPICAL SEE SIGNATURE CURVE
3
FSPJ264R, FSPJ264F
Performance Curves
1E-3
LIMITING INDUCTANCE (HENRY)
50
1E-4
ILM = 10A
30A
1E-5
100A
300A
1E-6
10
I
D
, DRAIN (A)
Unless Otherwise Specified
(Continued)
40
30
20
1E-7
10
30
100
DRAIN SUPPLY (V)
300
1000
0
-50
0
50
100
150
T
C
, CASE TEMPERATURE (
o
C)
FIGURE 3. TYPICAL DRAIN INDUCTANCE REQUIRED TO
LIMIT GAMMA DOT CURRENT TO I
AS
FIGURE 4. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE
500
T
C
= 25
o
C
I
D
, DRAIN CURRENT (A)
100
12V
Q
G
10
100µs
Q
GS
1ms
1
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
10ms
V
G
Q
GD
0.1
1
10
100
1000
CHARGE
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
FIGURE 6. BASIC GATE CHARGE WAVEFORM
2.5
PULSE DURATION = 250ms, V
GS
= 12V, I
D
= 27A
2.0
NORMALIZED r
DS(ON)
I
D
, DRAIN TO SOURCE CURRENT (A)
200
DESCENDING ORDER
V
GS
= 14V
V
GS
= 12V
V
GS
= 10V
V
GS
= 8V
V
GS
= 6V
V
GS
= 6 VOLTS
160
1.5
120
1.0
80
0.5
40
0.0
-80
0
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
0
2
4
6
8
10
12
14
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 7. TYPICAL NORMALIZED r
DS(ON)
vs JUNCTION
TEMPERATURE
FIGURE 8. TYPICAL OUTPUT CHARACTERISTICS
4
FSPJ264R, FSPJ264F
Performance Curves
NORMALIZED THERMAL RESPONSE (Z
qJC
)
10
1
Unless Otherwise Specified
(Continued)
10
0
0.5
10
-1
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
P
DM
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θJC
+ T
C
10
-4
10
-3
10
-2
10
-1
10
0
t
1
10
-2
10
-3
10
-5
t
2
10
1
t, RECTANGULAR PULSE DURATION (s)
FIGURE 9. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE
Major LED manufacturers are constantly improving their upstream epitaxial technology, such as using different electrode designs to control current density, using ITO thin film technology to evenly dis...
The 430 microcontroller is indeed somewhat different from the 51. The low power consumption mode is very suitable for the current development trend. The rich clock selection, as well as internal and e...
Seeking help: Our company originally used AD421 as AD conversion chip, but this chip is sometimes out of stock and the price is high, which increases the product cost. Now we need to replace it. Can a...
[size=4]What is a region rule? As the name implies, it is to set the routing rules within a specified region. There are two steps to complete the region rule setting: the first step: setting the rules...
"Have you set your calendar reminder?"
On August 24, Nvidia Robotics' official account posted a photo of a black gift box on a social media platform, with an attached greeting card sig...[Details]
Recently,
Xpeng Motors and Xinlian Integrated Circuit jointly announced the mass production of China's first hybrid silicon carbide product.
Designed and developed by Xpeng Motors and joint...[Details]
1. Introduction
Electronic scales are gradually replacing traditional measuring tools like springs and balances in everyday life, such as electronic price computing scales and electronic weigh...[Details]
Definition of interactive projection system:
Interactive projection systems, also known as multimedia interactive projection, are available in floor, wall, and tabletop interactive projection....[Details]
introduction
Sonar imaging is of great significance in marine resource development and defense. Its long range, intuitive display of the observed area, and target identification make it widely...[Details]
In June 2014, the Ministry of Industry and Information Technology issued 4G FD-LTE licenses to China Unicom and China Telecom. Together with the 4G TD-LTE licenses issued to China Mobile, China Uni...[Details]
The complexity of the integrated circuits (ICs) used in electronic systems in vehicles is increasing. They aim to execute artificial intelligence (AI) algorithms to control autonomous driving funct...[Details]
With the increasing number of new energy vehicles on the road, the deployment of supporting facilities for these vehicles has accelerated, and new energy vehicles have gradually entered the vision ...[Details]
The 2025 China International Automotive Testing Exhibition will be held at the Shanghai World Expo Exhibition and Convention Center from August 27 to 29, 2025.
Clacton Seafront, UK, ...[Details]
According to Nikkei, Japan has performed poorly in responding to China's power semiconductor challenges.
There are five major companies in Japan's power chip market: Mitsubishi Electric,...[Details]
Recently, Joyson Electronics has made positive progress in the core technology research and development of the robot's "brain and brain" and key components, and launched the industry's first integr...[Details]
Speaking of the problem of vehicle spontaneous combustion, whether it is a pure electric vehicle or a fuel vehicle, there will be incidents of spontaneous combustion. For the same spontaneous combu...[Details]
Wearable technology is taking off, with applications evolving rapidly, from smartwatches to fitness trackers and even smart wigs! Bluetooth Smart is at the center of this revolution. This is the se...[Details]
Analog Devices held a third-quarter fiscal 2025 earnings conference call. Vincent T. Roche, CEO and Chairman of the Board, and Richard C. Puccio, Executive Vice President and Chief Financial Office...[Details]
I believe everyone has heard of memory. If your computer is slow, your experts may recommend upgrading it to a larger capacity. But what exactly is computer memory used for? Why does memory capacit...[Details]
LED Zone
京公网安备 11010802033920号
EEWORLD
