300mA LDO Linear Regulators with Internal Microprocessor Reset Circuit

| 3N50 | 3N50G-TN3-R | 3N50L-TN3-R | 3N50G-TF3-T | 3N50L-TF3-T | 3N50_11 | |
|---|---|---|---|---|---|---|
| Description | 300mA LDO Linear Regulators with Internal Microprocessor Reset Circuit | 300mA LDO Linear Regulators with Internal Microprocessor Reset Circuit | 300mA LDO Linear Regulators with Internal Microprocessor Reset Circuit | 300mA LDO Linear Regulators with Internal Microprocessor Reset Circuit | 300mA LDO Linear Regulators with Internal Microprocessor Reset Circuit | 300mA LDO Linear Regulators with Internal Microprocessor Reset Circuit |
| Is it Rohs certified? | - | conform to | conform to | conform to | conform to | - |
| Maker | - | UNISONIC TECHNOLOGIES CO.,LTD | UNISONIC TECHNOLOGIES CO.,LTD | UNISONIC TECHNOLOGIES CO.,LTD | UNISONIC TECHNOLOGIES CO.,LTD | - |
| Parts packaging code | - | TO-252 | TO-252 | TO-220AB | TO-220AB | - |
| package instruction | - | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | - |
| Contacts | - | 4 | 4 | 3 | 3 | - |
| Reach Compliance Code | - | compli | compli | compli | compli | - |
| Avalanche Energy Efficiency Rating (Eas) | - | 200 mJ | 200 mJ | 200 mJ | 200 mJ | - |
| Configuration | - | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | - |
| Minimum drain-source breakdown voltage | - | 500 V | 500 V | 500 V | 500 V | - |
| Maximum drain current (ID) | - | 3 A | 3 A | 3 A | 3 A | - |
| Maximum drain-source on-resistance | - | 2.5 Ω | 2.5 Ω | 2.5 Ω | 2.5 Ω | - |
| FET technology | - | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | - |
| JEDEC-95 code | - | TO-252 | TO-252 | TO-220AB | TO-220AB | - |
| JESD-30 code | - | R-PSSO-G2 | R-PSSO-G2 | R-PSFM-T3 | R-PSFM-T3 | - |
| Number of components | - | 1 | 1 | 1 | 1 | - |
| Number of terminals | - | 2 | 2 | 3 | 3 | - |
| Operating mode | - | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | - |
| Package body material | - | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | - |
| Package shape | - | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | - |
| Package form | - | SMALL OUTLINE | SMALL OUTLINE | FLANGE MOUNT | FLANGE MOUNT | - |
| Peak Reflow Temperature (Celsius) | - | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | - |
| Polarity/channel type | - | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | - |
| Maximum pulsed drain current (IDM) | - | 12 A | 12 A | 12 A | 12 A | - |
| surface mount | - | YES | YES | NO | NO | - |
| Terminal form | - | GULL WING | GULL WING | THROUGH-HOLE | THROUGH-HOLE | - |
| Terminal location | - | SINGLE | SINGLE | SINGLE | SINGLE | - |
| Maximum time at peak reflow temperature | - | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | - |
| transistor applications | - | SWITCHING | SWITCHING | SWITCHING | SWITCHING | - |
| Transistor component materials | - | SILICON | SILICON | SILICON | SILICON | - |