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3N50L-TN3-R

Description
300mA LDO Linear Regulators with Internal Microprocessor Reset Circuit
CategoryDiscrete semiconductor    The transistor   
File Size175KB,7 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
Environmental Compliance
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3N50L-TN3-R Overview

300mA LDO Linear Regulators with Internal Microprocessor Reset Circuit

3N50L-TN3-R Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerUNISONIC TECHNOLOGIES CO.,LTD
Parts packaging codeTO-252
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts4
Reach Compliance Codecompli
Avalanche Energy Efficiency Rating (Eas)200 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage500 V
Maximum drain current (ID)3 A
Maximum drain-source on-resistance2.5 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-252
JESD-30 codeR-PSSO-G2
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)12 A
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
UNISONIC TECHNOLOGIES CO., LTD
3N50
Preliminary
Power MOSFET
3 Amps, 500 Volts
N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC
3N50
is an N-channel mode power MOSFET using
UTC’s advanced technology to provide customers with planar stripe
and DMOS technology. This technology allows a minimum on-state
resistance and superior switching performance. It also can withstand
high energy pulse in the avalanche and commutation mode.
The UTC
3N50
is generally applied in high efficiency switch mode
power supplies, active power factor correction and electronic lamp
ballasts based on half bridge topology.
1
TO-220F
1
TO-252
FEATURES
* 3A, 500V, R
DS(ON)
=2.5Ω @ V
GS
=10V
* High Switching Speed
* 100% Avalanche Tested
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
3N50L-TF3-T
3N50G-TF3-T
3N50L-TN3-R
3N50G-TN3-R
Pin Assignment: G: Gate D: Drain
S: Source
Package
TO-220F
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tube
Tape Reel
Note:
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
1 of 6
QW-R502-530.a

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Description 300mA LDO Linear Regulators with Internal Microprocessor Reset Circuit 300mA LDO Linear Regulators with Internal Microprocessor Reset Circuit 300mA LDO Linear Regulators with Internal Microprocessor Reset Circuit 300mA LDO Linear Regulators with Internal Microprocessor Reset Circuit 300mA LDO Linear Regulators with Internal Microprocessor Reset Circuit 300mA LDO Linear Regulators with Internal Microprocessor Reset Circuit
Is it Rohs certified? conform to - conform to conform to conform to -
Maker UNISONIC TECHNOLOGIES CO.,LTD - UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD -
Parts packaging code TO-252 - TO-252 TO-220AB TO-220AB -
package instruction SMALL OUTLINE, R-PSSO-G2 - SMALL OUTLINE, R-PSSO-G2 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 -
Contacts 4 - 4 3 3 -
Reach Compliance Code compli - compli compli compli -
Avalanche Energy Efficiency Rating (Eas) 200 mJ - 200 mJ 200 mJ 200 mJ -
Configuration SINGLE WITH BUILT-IN DIODE - SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE -
Minimum drain-source breakdown voltage 500 V - 500 V 500 V 500 V -
Maximum drain current (ID) 3 A - 3 A 3 A 3 A -
Maximum drain-source on-resistance 2.5 Ω - 2.5 Ω 2.5 Ω 2.5 Ω -
FET technology METAL-OXIDE SEMICONDUCTOR - METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR -
JEDEC-95 code TO-252 - TO-252 TO-220AB TO-220AB -
JESD-30 code R-PSSO-G2 - R-PSSO-G2 R-PSFM-T3 R-PSFM-T3 -
Number of components 1 - 1 1 1 -
Number of terminals 2 - 2 3 3 -
Operating mode ENHANCEMENT MODE - ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE -
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY -
Package shape RECTANGULAR - RECTANGULAR RECTANGULAR RECTANGULAR -
Package form SMALL OUTLINE - SMALL OUTLINE FLANGE MOUNT FLANGE MOUNT -
Peak Reflow Temperature (Celsius) NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED -
Polarity/channel type N-CHANNEL - N-CHANNEL N-CHANNEL N-CHANNEL -
Maximum pulsed drain current (IDM) 12 A - 12 A 12 A 12 A -
surface mount YES - YES NO NO -
Terminal form GULL WING - GULL WING THROUGH-HOLE THROUGH-HOLE -
Terminal location SINGLE - SINGLE SINGLE SINGLE -
Maximum time at peak reflow temperature NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED -
transistor applications SWITCHING - SWITCHING SWITCHING SWITCHING -
Transistor component materials SILICON - SILICON SILICON SILICON -
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