UNISONIC TECHNOLOGIES CO., LTD
3N50
Preliminary
Power MOSFET
3 Amps, 500 Volts
N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC
3N50
is an N-channel mode power MOSFET using
UTC’s advanced technology to provide customers with planar stripe
and DMOS technology. This technology allows a minimum on-state
resistance and superior switching performance. It also can withstand
high energy pulse in the avalanche and commutation mode.
The UTC
3N50
is generally applied in high efficiency switch mode
power supplies, active power factor correction and electronic lamp
ballasts based on half bridge topology.
1
TO-220F
1
TO-252
FEATURES
* 3A, 500V, R
DS(ON)
=2.5Ω @ V
GS
=10V
* High Switching Speed
* 100% Avalanche Tested
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
3N50L-TF3-T
3N50G-TF3-T
3N50L-TN3-R
3N50G-TN3-R
Pin Assignment: G: Gate D: Drain
S: Source
Package
TO-220F
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tube
Tape Reel
Note:
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1 of 6
QW-R502-530.a
3N50
PARAMETER
Preliminary
SYMBOL
V
DSS
V
GSS
I
D
I
DM
I
AR
E
AS
E
AR
dv/dt
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
=25°C, unless otherwise specified)
RATINGS
UNIT
Drain-Source Voltage
500
V
Gate-Source Voltage
±30
V
Continuous (T
C
=25°C)
3*
A
Drain Current
Pulsed (Note 1)
12 *
A
Avalanche Current (Note 1)
3
A
Single Pulsed (Note 2)
200
mJ
Avalanche Energy
Repetitive (Note 3)
6.2
mJ
Peak Diode Recovery dv/dt (Note 3)
4.5
V/ns
TO-220F
25
T
C
=25°C
W
TO-252
50
P
D
Power Dissipation
TO-220F
0.2
Derate above 25°C
W/°C
TO-252
0.4
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
* Drain current limited by maximum junction temperature
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
TO-220F
TO-252
TO-220F
TO-252
SYMBOL
θ
JA
θ
JC
RATINGS
62.5
110
4.9
2.5
UNIT
°C/W
°C/W
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QW-R502-530.a
3N50
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS
(T
C
=25°C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
I
D
=250µA, V
GS
=0V
Drain-Source Leakage Current
I
DSS
V
DS
=500V, V
GS
=0V
Forward
V
GS
=+30V, V
DS
=0V
Gate- Source Leakage Current
I
GSS
Reverse
V
GS
=-30V, V
DS
=0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=250µA
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
=1.5A
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
V
GS
=0V, V
DS
=25V, f=1.0MHz
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Total Gate Charge
Q
G
V
GS
=10V, V
DS
=400V, I
D
=3A
Gate to Source Charge
Q
GS
(Note 4, 5)
Gate to Drain Charge
Q
GD
Turn-ON Delay Time
t
D(ON)
Rise Time
t
R
V
DD
=250V, I
D
=3A, R
G
=25Ω
(Note 4, 5)
Turn-OFF Delay Time
t
D(OFF)
Fall-Time
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
I
S
Maximum Body-Diode Pulsed Current
I
SM
Drain-Source Diode Forward Voltage
V
SD
I
S
=3A, V
GS
=0V
Body Diode Reverse Recovery Time
t
RR
I
S
=3A, V
GS
=0V, dI
F
/dt=100A/µs
(Note 4)
Body Diode Reverse Recovery Charge
Q
RR
Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 40mH, I
AS
= 3A, V
DD
= 50V, R
G
= 25Ω, Starting T
J
= 25°C
3. I
SD
≤
3A, di/dt
≤
200A/µs, V
DD
≤
BV
DSS
, Starting T
J
= 25°C
4. Pulse Test: Pulse width
≤
300µs, Duty cycle
≤
2%
5. Essentially independent of operating temperature
MIN TYP MAX UNIT
500
V
1
µA
+100 nA
-100 nA
4.0
2.5
365
65
11
13
V
Ω
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
A
A
V
ns
µC
2.0
2.1
280
50
8.5
10
1.5
5.5
10
25
35
25
30
60
80
60
3
12
1.4
170
0.7
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3 of 6
QW-R502-530.a
3N50
Gate Charge Test Circuit
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
Gate Charge Waveforms
V
GS
Q
G
Same Type
as DUT
12V
200nF
50kΩ
V
GS
DUT
3mA
300nF
V
DS
10V
Q
GS
Q
GD
Charge
Unclamped Inductive Switching Test Circuit
V
DS
R
G
I
D
Unclamped Inductive Switching Waveforms
E
AS
= 1 LI
AS2
2
BV
DSS
L
I
AS
I
D
(t)
BV
DSS
BV
DSS
-V
DD
10V
t
P
DUT
V
DD
V
DD
V
DS
(t)
Time
t
P
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4 of 6
QW-R502-530.a
3N50
Preliminary
Peak Diode Recovery dv/dt Test Circuit & Waveforms
Power MOSFET
DUT
R
G
+
V
DS
L
-
I
SD
V
GS
V
DD
Driver
Same Type
as DUT
dv/dt controlled by R
G
I
SD
controlled by pulse period
V
GS
(Driver)
D=
Gate Pulse Width
Gate Pulse Period
10V
I
FM
, Body Diode Forward Current
I
SD
(DUT)
I
RM
Body Diode Reverse Current
V
DS
(DUT)
di/dt
Body Diode Recovery dv/dt
V
SD
V
DD
Body Diode Forward
Voltage Drop
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QW-R502-530.a
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