3N90L-TQ2-T datasheet, PDF - EEWORLD Datasheet

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3N90L-TQ2-T: Description3 Amps, 900 Volts N-CHANNEL POWER MOSFET; CategoryDiscrete semiconductor The transistor; File Size226KB，7 Pages; ManufacturerUNISONIC TECHNOLOGIES CO.,LTD; Websitehttp://www.unisonic.com.tw/; Environmental Compliance

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3N90L-TQ2-T Overview

3 Amps, 900 Volts N-CHANNEL POWER MOSFET

3N90L-TQ2-T Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Parts packaging code	D2PAK
package instruction	SMALL OUTLINE, R-PSSO-G2
Contacts	4
Reach Compliance Code	compli
Avalanche Energy Efficiency Rating (Eas)	180 mJ
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	900 V
Maximum drain current (Abs) (ID)	3 A
Maximum drain current (ID)	3 A
Maximum drain-source on-resistance	4.8 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-263AB
JESD-30 code	R-PSSO-G2
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	90 W
Maximum pulsed drain current (IDM)	10 A
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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UNISONIC TECHNOLOGIES CO., LTD

3N90

3 Amps, 900 Volts N-CHANNEL

POWER MOSFET

DESCRIPTION

The UTC

3N90

provides excellent R

DS(ON)

, low gate charge and

operation with low gate voltages. This device is suitable for use as a

load switch or in PWM applications.

Power MOSFET

FEATURES

* R

DS(ON)

=4.1Ω @V

=10 V

* Ultra Low Gate Charge ( typical 22.7 nC )

* Low Reverse Transfer Capacitance ( C

RSS

= Typical 13 pF )

* Fast Switching Capability

* Avalanche Energy Specified

* Improved dv/dt Capability, High Ruggedness

SYMBOL

2.Drain

1.Gate

3.Source

ORDERING INFORMATION

Ordering Number

Lead Free

Halogen Free

3N90L-TA3-T

3N90G-TA3-T

3N90L-TF3-T

3N90G-TF3-T

3N90L-TQ2-T

3N90G-TQ2-T

3N90L-TQ2-R

3N90G-TQ2-R

Package

TO-220

TO-220F

TO-263

Pin Assignment

Packing

Tube

Tape Reel

www.unisonic.com.tw

1 of 6

QW-R502-290.A

3N90L-TQ2-T Related Products

	3N90L-TQ2-T	3N90G-TF3-T	3N90G-TQ2-T	3N90L-TF3-T	3N90	3N90L-TQ2-R	3N90G-TA3-T	3N90G-TQ2-R	3N90L-TA3-T
Description	3 Amps, 900 Volts N-CHANNEL POWER MOSFET	3 Amps, 900 Volts N-CHANNEL POWER MOSFET	3 Amps, 900 Volts N-CHANNEL POWER MOSFET	3 Amps, 900 Volts N-CHANNEL POWER MOSFET	3 Amps, 900 Volts N-CHANNEL POWER MOSFET	3 Amps, 900 Volts N-CHANNEL POWER MOSFET	3 Amps, 900 Volts N-CHANNEL POWER MOSFET	3 Amps, 900 Volts N-CHANNEL POWER MOSFET	3 Amps, 900 Volts N-CHANNEL POWER MOSFET
Is it Rohs certified?	conform to	conform to	conform to	conform to	-	conform to	conform to	conform to	conform to
Parts packaging code	D2PAK	TO-220AB	D2PAK	TO-220AB	-	D2PAK	TO-220AB	D2PAK	TO-220AB
package instruction	SMALL OUTLINE, R-PSSO-G2	FLANGE MOUNT, R-PSFM-T3	SMALL OUTLINE, R-PSSO-G2	T0-220F, 3 PIN	-	SMALL OUTLINE, R-PSSO-G2	FLANGE MOUNT, R-PSFM-T3	SMALL OUTLINE, R-PSSO-G2	T0-220, 3 PIN
Contacts	4	3	4	3	-	4	3	4	3
Reach Compliance Code	compli	compli	compli	compliant	-	compli	compli	compli	compli
Avalanche Energy Efficiency Rating (Eas)	180 mJ	180 mJ	180 mJ	180 mJ	-	180 mJ	180 mJ	180 mJ	180 mJ
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	-	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	900 V	900 V	900 V	900 V	-	900 V	900 V	900 V	900 V
Maximum drain current (Abs) (ID)	3 A	3 A	3 A	3 A	-	3 A	3 A	3 A	3 A
Maximum drain current (ID)	3 A	3 A	3 A	3 A	-	3 A	3 A	3 A	3 A
Maximum drain-source on-resistance	4.8 Ω	4.8 Ω	4.8 Ω	4.8 Ω	-	4.8 Ω	4.8 Ω	4.8 Ω	4.8 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	-	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-263AB	TO-220AB	TO-263AB	TO-220AB	-	TO-263AB	TO-220AB	TO-263AB	TO-220AB
JESD-30 code	R-PSSO-G2	R-PSFM-T3	R-PSSO-G2	R-PSFM-T3	-	R-PSSO-G2	R-PSFM-T3	R-PSSO-G2	R-PSFM-T3
Number of components	1	1	1	1	-	1	1	1	1
Number of terminals	2	3	2	3	-	2	3	2	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	-	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	-	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	FLANGE MOUNT	SMALL OUTLINE	FLANGE MOUNT	-	SMALL OUTLINE	FLANGE MOUNT	SMALL OUTLINE	FLANGE MOUNT
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	-	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	90 W	25 W	90 W	25 W	-	90 W	90 W	90 W	90 W
Maximum pulsed drain current (IDM)	10 A	10 A	10 A	10 A	-	10 A	10 A	10 A	10 A
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	NO	YES	NO	-	YES	NO	YES	NO
Terminal form	GULL WING	THROUGH-HOLE	GULL WING	THROUGH-HOLE	-	GULL WING	THROUGH-HOLE	GULL WING	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	-	SINGLE	SINGLE	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	-	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	-	SILICON	SILICON	SILICON	SILICON
Base Number Matches	1	1	1	1	-	1	1	1	1

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