UNISONIC TECHNOLOGIES CO., LTD
3N90
3 Amps, 900 Volts N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC
3N90
provides excellent R
DS(ON)
, low gate charge and
operation with low gate voltages. This device is suitable for use as a
load switch or in PWM applications.
Power MOSFET
FEATURES
* R
DS(ON)
=4.1Ω @V
GS
=10 V
* Ultra Low Gate Charge ( typical 22.7 nC )
* Low Reverse Transfer Capacitance ( C
RSS
= Typical 13 pF )
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
3N90L-TA3-T
3N90G-TA3-T
3N90L-TF3-T
3N90G-TF3-T
3N90L-TQ2-T
3N90G-TQ2-T
3N90L-TQ2-R
3N90G-TQ2-R
Package
TO-220
TO-220F
TO-263
TO-263
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tape Reel
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Copyright © 2010 Unisonic Technologies Co., Ltd
1 of 6
QW-R502-290.A
3N90
ABSOLUTE MAXIMUM RATINGS
(T
C
=25°C, unless otherwise specified)
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage (V
GS
=0V)
V
DSS
V
900
Drain-Gate Voltage (R
G
=20kΩ)
V
DGR
V
900
Gate-Source Voltage
V
GSS
±30
V
Gate-Source Breakdown Voltage (I
GS
=±1mA)
BV
GSO
30(MIN)
V
Insulation Withstand Voltage (DC)
TO-220F
V
ISO
2500
V
Avalanche Current (Note 2)
I
AR
3
A
Continuous Drain Current
I
D
3
A
Pulsed Drain Current
I
DM
10
A
Single Pulse Avalanche Energy (Note 3)
E
AS
180
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
TO-220/ TO-263
90
Power Dissipation
P
D
W
TO-220F
25
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by T
J(MAX)
3. starting T
J
=25 °C, I
D
=I
AR
, V
DD
=50V
4. I
SD
≦3A,
di/dt≦200A/μs, V
DD
≦BV
DSS
, T
J
≦T
J(MAX)
.
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
TO-220/ TO-263
TO-220F
TO-220/ TO-263
TO-220F
SYMBOL
θ
JA
θ
JC
RATING
62.5
62.5
1.38
5
UNIT
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(T
C
=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
Forward Transconductance (Note 1)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Equivalent Output Capacitance (Note 2)
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SYMBOL
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
g
FS
C
ISS
C
OSS
C
RSS
C
OSS(EQ)
t
D(ON)
t
R
t
D(OFF)
t
F
Q
G
Q
GS
Q
DD
TEST CONDITIONS
V
GS
=0V, I
D
=250μA
V
DS
=900V, V
GS
=0V
V
GS
=±30V, V
DS
=0V
V
DS
=V
GS
, I
D
=250μA
V
GS
=10V, I
D
=1.5A
V
DS
=15V, I
D
=1.5A
MIN TYP MAX UNIT
900
1
±10
3
3.75
4.1
2.1
590
63
13
34
18
7
45
18
22.7
4.2
12
4.5
4.8
V
μA
μA
V
Ω
S
pF
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
DS
=25V, V
GS
=0V, f=1MHz
V
GS
=0V, V
DS
=0V~400V
V
DD
=450V, I
D
=1.5 A, R
G
=4.7Ω
V
GS
=10V
V
DD
=720V, I
D
=1.5 A, R
G
=4.7Ω
V
GS
=10V
V
DD
=720V, I
D
=3A, V
GS
=10V
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QW-R502-290.A
3N90
ELECTRICAL CHARACTERISTICS(Cont.)
Power MOSFET
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage(Note 1)
V
SD
I
SD
=3A ,V
GS
=0V
1.6
V
Source-Drain Current
I
SD
3
A
Source-Drain Current (Pulsed)
I
SDM
12
A
Reverse Recovery Current
I
RRM
8.7
A
I
SD
=3A, di/dt=100A/μs,
Body Diode Reverse Recovery Time
t
RR
510
ns
V
DD
=100V, T
J
=25°C
2.2
nC
Body Diode Reverse Recovery Charge
Q
RR
Note: 1.Pulse width=300μs, Duty cycle≦1.5%
Note:
2.C
OSS(EQ)
is defined asa constant equivalent capacitance giving the same charging time as C
OSS
when V
DS
increases from 0to 80% V
DSS
.
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QW-R502-290.A
3N90
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
V
DS
-
+
-
L
Power MOSFET
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Fig. 1B Peak Diode Recovery dv/dt Waveforms
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QW-R502-290.A
3N90
TEST CIRCUITS AND WAVEFORMS (Cont.)
Power MOSFET
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
12V
50kΩ
0.2μF
0.3μF
Same Type
as D.U.T.
10V
V
DS
Q
GS
Q
G
Q
GD
V
GS
DUT
3mA
V
GS
Charge
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
Fig. 4A Unclamped Inductive Switching Test Circuit
Fig. 4B Unclamped Inductive Switching Waveforms
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QW-R502-290.A
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