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3N90G-TA3-T

Description
3 Amps, 900 Volts N-CHANNEL POWER MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size226KB,7 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
Environmental Compliance
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3N90G-TA3-T Overview

3 Amps, 900 Volts N-CHANNEL POWER MOSFET

3N90G-TA3-T Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Parts packaging codeTO-220AB
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codecompli
Avalanche Energy Efficiency Rating (Eas)180 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage900 V
Maximum drain current (Abs) (ID)3 A
Maximum drain current (ID)3 A
Maximum drain-source on-resistance4.8 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)90 W
Maximum pulsed drain current (IDM)10 A
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
UNISONIC TECHNOLOGIES CO., LTD
3N90
3 Amps, 900 Volts N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC
3N90
provides excellent R
DS(ON)
, low gate charge and
operation with low gate voltages. This device is suitable for use as a
load switch or in PWM applications.
Power MOSFET
FEATURES
* R
DS(ON)
=4.1Ω @V
GS
=10 V
* Ultra Low Gate Charge ( typical 22.7 nC )
* Low Reverse Transfer Capacitance ( C
RSS
= Typical 13 pF )
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
3N90L-TA3-T
3N90G-TA3-T
3N90L-TF3-T
3N90G-TF3-T
3N90L-TQ2-T
3N90G-TQ2-T
3N90L-TQ2-R
3N90G-TQ2-R
Package
TO-220
TO-220F
TO-263
TO-263
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tape Reel
www.unisonic.com.tw
Copyright © 2010 Unisonic Technologies Co., Ltd
1 of 6
QW-R502-290.A

3N90G-TA3-T Related Products

3N90G-TA3-T 3N90G-TF3-T 3N90G-TQ2-T 3N90L-TF3-T 3N90 3N90L-TQ2-T 3N90L-TQ2-R 3N90G-TQ2-R 3N90L-TA3-T
Description 3 Amps, 900 Volts N-CHANNEL POWER MOSFET 3 Amps, 900 Volts N-CHANNEL POWER MOSFET 3 Amps, 900 Volts N-CHANNEL POWER MOSFET 3 Amps, 900 Volts N-CHANNEL POWER MOSFET 3 Amps, 900 Volts N-CHANNEL POWER MOSFET 3 Amps, 900 Volts N-CHANNEL POWER MOSFET 3 Amps, 900 Volts N-CHANNEL POWER MOSFET 3 Amps, 900 Volts N-CHANNEL POWER MOSFET 3 Amps, 900 Volts N-CHANNEL POWER MOSFET
Is it Rohs certified? conform to conform to conform to conform to - conform to conform to conform to conform to
Parts packaging code TO-220AB TO-220AB D2PAK TO-220AB - D2PAK D2PAK D2PAK TO-220AB
package instruction FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 SMALL OUTLINE, R-PSSO-G2 T0-220F, 3 PIN - SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 T0-220, 3 PIN
Contacts 3 3 4 3 - 4 4 4 3
Reach Compliance Code compli compli compli compliant - compli compli compli compli
Avalanche Energy Efficiency Rating (Eas) 180 mJ 180 mJ 180 mJ 180 mJ - 180 mJ 180 mJ 180 mJ 180 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE - SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 900 V 900 V 900 V 900 V - 900 V 900 V 900 V 900 V
Maximum drain current (Abs) (ID) 3 A 3 A 3 A 3 A - 3 A 3 A 3 A 3 A
Maximum drain current (ID) 3 A 3 A 3 A 3 A - 3 A 3 A 3 A 3 A
Maximum drain-source on-resistance 4.8 Ω 4.8 Ω 4.8 Ω 4.8 Ω - 4.8 Ω 4.8 Ω 4.8 Ω 4.8 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR - METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-220AB TO-220AB TO-263AB TO-220AB - TO-263AB TO-263AB TO-263AB TO-220AB
JESD-30 code R-PSFM-T3 R-PSFM-T3 R-PSSO-G2 R-PSFM-T3 - R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSFM-T3
Number of components 1 1 1 1 - 1 1 1 1
Number of terminals 3 3 2 3 - 2 2 2 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE - ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C - 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT SMALL OUTLINE FLANGE MOUNT - SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE FLANGE MOUNT
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL - N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 90 W 25 W 90 W 25 W - 90 W 90 W 90 W 90 W
Maximum pulsed drain current (IDM) 10 A 10 A 10 A 10 A - 10 A 10 A 10 A 10 A
Certification status Not Qualified Not Qualified Not Qualified Not Qualified - Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO YES NO - YES YES YES NO
Terminal form THROUGH-HOLE THROUGH-HOLE GULL WING THROUGH-HOLE - GULL WING GULL WING GULL WING THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE SINGLE - SINGLE SINGLE SINGLE SINGLE
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING - SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON - SILICON SILICON SILICON SILICON
Base Number Matches 1 1 1 1 - 1 1 1 1
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