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MA45365

Description
X BAND, 12pF, 60V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, GLASS PACKAGE-2
CategoryDiscrete semiconductor    diode   
File Size90KB,3 Pages
ManufacturerTE Connectivity
Websitehttp://www.te.com
Download Datasheet Parametric View All

MA45365 Overview

X BAND, 12pF, 60V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, GLASS PACKAGE-2

MA45365 Parametric

Parameter NameAttribute value
MakerTE Connectivity
package instructionO-LALF-W2
Contacts2
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresLOW LEAKAGE
Minimum breakdown voltage60 V
Shell connectionISOLATED
ConfigurationSINGLE
Diode Capacitance Tolerance10%
Minimum diode capacitance ratio7.3
Nominal diode capacitance12 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
frequency bandX BAND
JESD-30 codeO-LALF-W2
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Maximum power dissipation0.25 W
Certification statusNot Qualified
minimum quality factor650
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
Varactor Diode ClassificationABRUPT
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