12 Amps, 500 Volts N-CHANNEL POWER MOSFET
| 12N50 | 12N50G-TA3-T | 12N50L-TF1-T | 12N50L-TA3-T | |
|---|---|---|---|---|
| Description | 12 Amps, 500 Volts N-CHANNEL POWER MOSFET | 12 Amps, 500 Volts N-CHANNEL POWER MOSFET | 12 Amps, 500 Volts N-CHANNEL POWER MOSFET | 12 Amps, 500 Volts N-CHANNEL POWER MOSFET |
| Is it Rohs certified? | - | conform to | conform to | conform to |
| Parts packaging code | - | TO-220AB | TO-220AB | TO-220AB |
| Contacts | - | 3 | 3 | 3 |
| Reach Compliance Code | - | compli | compli | compli |
| Avalanche Energy Efficiency Rating (Eas) | - | 684 mJ | 684 mJ | 684 mJ |
| Configuration | - | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | - | 500 V | 500 V | 500 V |
| Maximum drain current (Abs) (ID) | - | 12 A | 12 A | 12 A |
| Maximum drain current (ID) | - | 12 A | 12 A | 12 A |
| Maximum drain-source on-resistance | - | 0.54 Ω | 0.54 Ω | 0.54 Ω |
| FET technology | - | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | - | TO-220AB | TO-220AB | TO-220AB |
| JESD-30 code | - | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 |
| Number of components | - | 1 | 1 | 1 |
| Number of terminals | - | 3 | 3 | 3 |
| Operating mode | - | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Maximum operating temperature | - | 150 °C | 150 °C | 150 °C |
| Package body material | - | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | - | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | - | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
| Peak Reflow Temperature (Celsius) | - | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| Polarity/channel type | - | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| Maximum power dissipation(Abs) | - | 192 W | 42 W | 192 W |
| Maximum pulsed drain current (IDM) | - | 48 A | 48 A | 48 A |
| surface mount | - | NO | NO | NO |
| Terminal form | - | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| Terminal location | - | SINGLE | SINGLE | SINGLE |
| Maximum time at peak reflow temperature | - | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| transistor applications | - | SWITCHING | SWITCHING | SWITCHING |
| Transistor component materials | - | SILICON | SILICON | SILICON |
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