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12N50L-TF1-T

Description
12 Amps, 500 Volts N-CHANNEL POWER MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size30KB,2 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
Environmental Compliance
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12N50L-TF1-T Overview

12 Amps, 500 Volts N-CHANNEL POWER MOSFET

12N50L-TF1-T Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerUNISONIC TECHNOLOGIES CO.,LTD
Parts packaging codeTO-220AB
Contacts3
Reach Compliance Codecompli
Avalanche Energy Efficiency Rating (Eas)684 mJ
Shell connectionISOLATED
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage500 V
Maximum drain current (Abs) (ID)12 A
Maximum drain current (ID)12 A
Maximum drain-source on-resistance0.54 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)42 W
Maximum pulsed drain current (IDM)48 A
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON

12N50L-TF1-T Related Products

12N50L-TF1-T 12N50 12N50G-TA3-T 12N50L-TA3-T
Description 12 Amps, 500 Volts N-CHANNEL POWER MOSFET 12 Amps, 500 Volts N-CHANNEL POWER MOSFET 12 Amps, 500 Volts N-CHANNEL POWER MOSFET 12 Amps, 500 Volts N-CHANNEL POWER MOSFET
Is it Rohs certified? conform to - conform to conform to
Parts packaging code TO-220AB - TO-220AB TO-220AB
Contacts 3 - 3 3
Reach Compliance Code compli - compli compli
Avalanche Energy Efficiency Rating (Eas) 684 mJ - 684 mJ 684 mJ
Configuration SINGLE WITH BUILT-IN DIODE - SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 500 V - 500 V 500 V
Maximum drain current (Abs) (ID) 12 A - 12 A 12 A
Maximum drain current (ID) 12 A - 12 A 12 A
Maximum drain-source on-resistance 0.54 Ω - 0.54 Ω 0.54 Ω
FET technology METAL-OXIDE SEMICONDUCTOR - METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-220AB - TO-220AB TO-220AB
JESD-30 code R-PSFM-T3 - R-PSFM-T3 R-PSFM-T3
Number of components 1 - 1 1
Number of terminals 3 - 3 3
Operating mode ENHANCEMENT MODE - ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C - 150 °C 150 °C
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR - RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT - FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL - N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 42 W - 192 W 192 W
Maximum pulsed drain current (IDM) 48 A - 48 A 48 A
surface mount NO - NO NO
Terminal form THROUGH-HOLE - THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE - SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING - SWITCHING SWITCHING
Transistor component materials SILICON - SILICON SILICON
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