12N50L-TA3-T datasheet, PDF - EEWORLD Datasheet

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12N50L-TA3-T: Description12 Amps, 500 Volts N-CHANNEL POWER MOSFET; CategoryDiscrete semiconductor The transistor; File Size30KB，2 Pages; ManufacturerUNISONIC TECHNOLOGIES CO.,LTD; Websitehttp://www.unisonic.com.tw/; Environmental Compliance

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12N50L-TA3-T Overview

12 Amps, 500 Volts N-CHANNEL POWER MOSFET

12N50L-TA3-T Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Parts packaging code	TO-220AB
package instruction	TO-220, 3 PIN
Contacts	3
Reach Compliance Code	compli
Avalanche Energy Efficiency Rating (Eas)	684 mJ
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	500 V
Maximum drain current (Abs) (ID)	12 A
Maximum drain current (ID)	12 A
Maximum drain-source on-resistance	0.54 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	192 W
Maximum pulsed drain current (IDM)	48 A
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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12N50L-TA3-T Related Products

	12N50L-TA3-T	12N50	12N50G-TA3-T	12N50L-TF1-T
Description	12 Amps, 500 Volts N-CHANNEL POWER MOSFET	12 Amps, 500 Volts N-CHANNEL POWER MOSFET	12 Amps, 500 Volts N-CHANNEL POWER MOSFET	12 Amps, 500 Volts N-CHANNEL POWER MOSFET
Is it Rohs certified?	conform to	-	conform to	conform to
Parts packaging code	TO-220AB	-	TO-220AB	TO-220AB
Contacts	3	-	3	3
Reach Compliance Code	compli	-	compli	compli
Avalanche Energy Efficiency Rating (Eas)	684 mJ	-	684 mJ	684 mJ
Configuration	SINGLE WITH BUILT-IN DIODE	-	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	500 V	-	500 V	500 V
Maximum drain current (Abs) (ID)	12 A	-	12 A	12 A
Maximum drain current (ID)	12 A	-	12 A	12 A
Maximum drain-source on-resistance	0.54 Ω	-	0.54 Ω	0.54 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	-	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-220AB	-	TO-220AB	TO-220AB
JESD-30 code	R-PSFM-T3	-	R-PSFM-T3	R-PSFM-T3
Number of components	1	-	1	1
Number of terminals	3	-	3	3
Operating mode	ENHANCEMENT MODE	-	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	-	150 °C	150 °C
Package body material	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	-	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	-	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	N-CHANNEL	-	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	192 W	-	192 W	42 W
Maximum pulsed drain current (IDM)	48 A	-	48 A	48 A
surface mount	NO	-	NO	NO
Terminal form	THROUGH-HOLE	-	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	-	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	-	SWITCHING	SWITCHING
Transistor component materials	SILICON	-	SILICON	SILICON

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