PNP BCY78 – BCY79
SILICON PLANAR EPITAXIAL TRANSISTORS
The BCY78 and BCY79 are PNP transistors mounted in TO-18 metal package with the collector
connected to the case .
They are designed for use in audio drive and low-noise input stages.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CEO
V
CES
V
EBO
I
C
I
B
P
D
P
D
T
J
T
Stg
Ratings
Collector-Emitter Voltage (I
B
=0)
Collector-Emitter Voltage (
V
BE
=0)
Emitter-Base Voltage (I
C
=0)
Collector Current
Base Current
Total Power Dissipation
Total Power Dissipation
Junction Temperature
Storage Temperature range
@ T
amb
= 25°
@ T
case
= 45°
BCY79
BCY78
BCY79
BCY78
BCY79
BCY78
BCY79
BCY78
BCY79
BCY78
BCY79
BCY78
BCY79
BCY78
BCY79
BCY78
BCY79
BCY78
Value
-45
-32
-45
-32
-5
-5
-200
-20
390
1
200
-65 to +150
Unit
V
V
V
mA
mA
mW
Watts
°C
°C
THERMAL CHARACTERISTICS
Symbol
R
thJ-a
R
thJ-c
Ratings
Thermal Resistance, Junction to mounting
base
Thermal Resistance, Junction to ambient in
free air
BCY79
BCY78
BCY79
BCY78
Value
450
150
Unit
°C/W
°C/W
COMSET SEMICONDUCTORS
1/4
PNP BCY78 – BCY79
ELECTRICAL CHARACTERISTICS
Tj=25°C unless otherwise specified
Symbol
I
CES
I
CES
I
EBO
V
CEO
V
EBO
V
CE(SAT)
Ratings
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
Test Condition(s)
V
CB
=-35 V, V
BE
=0V
V
CB
=-25 V, V
B
=0V
V
CB
=-35 V
V
BE
=0V,T
j
=150°C
V
CB
=-25 V
V
BE
=0V,T
j
=150°C
V
BE
=-4.0 V, I
C
=0
Min Typ
-
-
-
-
-
-
-
-
-0.12
-04
-0.7
-0.85
-0.55
-0.65
-0.68
-0.75
BCY79IX
BCY78IX
>40
Typ.270
>250
<460
>160
<630
>60
>250
<500
Mx
-20
-10
-20
-
-
-
-0.25
-08
Unit
nA
µA
nA
V
V
BCY79
BCY78
BCY79
BCY78
BCY79
BCY78
BCY79
BCY78
BCY79
BCY78
BCY79
BCY78
BCY79
BCY78
BCY79
BCY78
BCY79
BCY78
BCY79
BCY78
BCY79
BCY78
BCY79
BCY78
BCY79
BCY78
-
-45
-32
-5
-
-
-0.6
-0.7
-
-0.6
-
-
Collector Emitter Breakdown
I
C
=-2 mA, I
B
=0
Voltage
Emitter Base Breakdown
I
E
=-1µA, I
C
=0
Voltage
Collector-Emitter saturation
Voltage
I
C
=-10 mA, I
B
=-0.25 mA
I
C
=-100 mA, I
B
=-2.5 mA
I
C
=-10 mA, I
B
=-0.25 mA
I
C
=-100 mA, I
B
=-2.5 mA
I
C
=-10 µA, V
CE
=-5 V
I
C
=-2 mA, V
CE
=-5 V
V
-0.85
-1.2
-
-0.75
V
-
-
BCY79X
BCY78X
>100
Typ.390
>380
<630
>240
<1000
>60
>350
<700
V
BE(SAT)
Base-Emitter Saturation
Voltage
V
BE
Base-Emitter Voltage
I
C
=-10 mA, V
CE
=-1 V
I
C
=-100 mA, V
CE
=-1 V
I
C
=-10 µA, V
CE
=-5 V
h
FE
DC Current Gain
I
C
=-2 mA, V
CE
=-5 V
I
C
=-10 mA, V
CE
=-1 V
h
fe
Small-Signal
Current Gain
I
C
=-100 mA, V
CE
=-1 V
I
C
=2 mA, V
C E
=5 V
f = 1kHz
BCY79VII
BCY78VII
-
Typ.140
>120
<220
>80
-
>40
>125
<250
BCY79VIII
BCY78VIII
>30
Typ.200
>180
<310
>120
<400
>45
>175
<350
COMSET SEMICONDUCTORS
2/4
PNP BCY78 – BCY79
MECHANICAL DATA CASE TO-18
DIMENSIONS
mm
A
B
D
E
F
G
H
I
L
12,7
0,49
5,3
4,9
5,8
2,54
1,2
1,16
45°
inches
0,5
0,019
0,208
0,193
0,228
0,1
0,047
0,045
45°
Pin 1 :
Pin 2 :
Pin 3 :
emitter
base
Collector
Information furnished is believed to be accurate and reliable. However, CS assumes no responsability
for the consequences of use of such information nor for errors that could appear.
Data are subject to change without notice.
COMSET SEMICONDUCTORS
4/4
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