EEWORLDEEWORLDEEWORLD

Part Number

Search

BUK202-50Y

Description
Buffer/Inverter Based Peripheral Driver
CategoryAnalog mixed-signal IC    Drivers and interfaces   
File Size208KB,14 Pages
ManufacturerNexperia
Websitehttps://www.nexperia.com
Environmental Compliance
Download Datasheet Parametric View All

BUK202-50Y Overview

Buffer/Inverter Based Peripheral Driver

BUK202-50Y Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerNexperia
Reach Compliance Codenot_compliant
ECCN codeEAR99
Interface integrated circuit typeBUFFER OR INVERTER BASED PERIPHERAL DRIVER
JESD-609 codee3
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Terminal surfaceTin (Sn)
Maximum time at peak reflow temperatureNOT SPECIFIED

BUK202-50Y Preview

Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename
Nexperia.
Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use
http://www.nexperia.com
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use
salesaddresses@nexperia.com
(email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
-
© Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via
salesaddresses@nexperia.com).
Thank you for your cooperation and
understanding,
Kind regards,
Team Nexperia
Philips Semiconductors
Product specification
PowerMOS transistor
TOPFET high side switch
DESCRIPTION
Monolithic temperature and
overload protected power switch
based on MOSFET technology in a
5 pin plastic envelope, configured
as a single high side switch.
BUK202-50Y
QUICK REFERENCE DATA
SYMBOL
I
L
SYMBOL
PARAMETER
Nominal load current (ISO)
PARAMETER
Continuous off-state supply voltage
Continuous load current
Continuous junction temperature
On-state resistance
MIN.
9
MAX.
50
20
150
38
UNIT
A
UNIT
V
A
˚C
mΩ
APPLICATIONS
General controller for driving
lamps, motors, solenoids, heaters.
V
BG
I
L
T
j
R
ON
FEATURES
Vertical power DMOS switch
Low on-state resistance
5 V logic compatible input
Overtemperature protection -
self resets with hysteresis
Overload protection against
short circuit load with
output current limiting;
latched - reset by input
High supply voltage load
protection
Supply undervoltage lock out
Status indication for overload
protection activated
Diagnostic status indication
of open circuit load
Very low quiescent current
Voltage clamping for turn off of
inductive loads
ESD protection on all pins
Reverse battery and
overvoltage protection
FUNCTIONAL BLOCK DIAGRAM
BATT
STATUS
POWER
MOSFET
CONTROL &
PROTECTION
CIRCUITS
LOAD
GROUND
RG
INPUT
Fig.1. Elements of the TOPFET HSS with internal ground resistor.
PINNING - SOT263
PIN
1
2
3
4
5
tab
DESCRIPTION
Ground
Input
Battery
(+ve supply)
Status
Load
PIN CONFIGURATION
tab
SYMBOL
I
S
1 2345
B
TOPFET
HSS
G
L
leadform
263-01
Fig. 2.
connected to pin 3
Fig. 3.
April 1995
1
Rev 1.100
Philips Semiconductors
Product specification
PowerMOS transistor
TOPFET high side switch
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
V
BG
PARAMETER
Battery voltages
Continuous off-state supply voltage
Reverse battery voltages
1
Repetitive peak supply voltage
Continuous reverse supply voltage
Continuous load current
Total power dissipation
Storage temperature
Continuous junction temperature
2
Lead temperature
Input and status
Continuous input current
Continuous status current
Repetitive peak input current
Repetitive peak status current
Inductive load clamping
E
BL
Non-repetitive clamping energy
T
mb
= 150 ˚C prior to turn-off
-
CONDITIONS
-
External resistors:
R
I
= R
S
4.7 kΩ,
δ ≤
0.1
R
I
= R
S
4.7 kΩ
T
mb
110 ˚C
T
mb
25 ˚C
-
-
during soldering
MIN.
0
BUK202-50Y
MAX.
50
UNIT
V
-V
BG
-V
BG
I
L
P
D
T
stg
T
j
T
sold
-
-
-
-
-55
-
-
32
16
20
125
175
150
250
V
V
A
W
˚C
˚C
˚C
I
I
I
S
I
I
I
S
-
-
δ ≤
0.1
δ ≤
0.1
-5
-5
-20
-20
5
5
20
20
mA
mA
mA
mA
1.7
J
ESD LIMITING VALUE
SYMBOL
V
C
PARAMETER
Electrostatic discharge capacitor
voltage
CONDITIONS
Human body model;
C = 250 pF; R = 1.5 kΩ
MIN.
-
MAX.
2
UNIT
kV
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Thermal resistance
3
R
th j-mb
R
th j-a
Junction to mounting base
Junction to ambient
-
in free air
-
-
0.8
60
1
75
K/W
K/W
CONDITIONS
MIN.
TYP.
MAX.
UNIT
1
Reverse battery voltage is allowed only with external input and status resistors to limit the currents to a safe value.
2
For normal continuous operation. A higher T
j
is allowed as an overload condition but at the threshold T
j(TO)
the over temperature trip operates
to protect the switch.
3
Of the output Power MOS transistor.
April 1995
2
Rev 1.100
Philips Semiconductors
Product specification
PowerMOS transistor
TOPFET high side switch
STATIC CHARACTERISTICS
T
mb
= 25 ˚C unless otherwise stated
SYMBOL
V
BG
V
BL
-V
LG
PARAMETER
Clamping voltages
Battery to ground
Battery to load
Negative load to ground
Supply voltage
Operating range
1
Currents
I
L
I
B
I
G
I
L
R
ON
R
ON
R
G
Nominal load current
2
Quiescent current
3
Operating current
4
Off-state load current
5
Resistances
On-state resistance
6
On-state resistance
Internal ground resistance
CONDITIONS
I
G
= 1 mA
I
L
= I
G
= 1 mA
I
L
= 1 mA
battery to ground
-
V
BG
= 13 V
V
BL
= 0.5 V; T
mb
= 85 ˚C
V
IG
= 0 V; V
LG
= 0 V
V
IG
= 5 V; I
L
= 0 A
V
BL
= 13 V; V
IG
= 0 V
V
BG
= 13 V; I
L
= 10 A; t
p
= 300
µs
V
BG
= 5 V; I
L
= 2 A; t
p
= 300
µs
I
G
= 10 mA
9
-
1.5
-
MIN.
50
50
12
BUK202-50Y
TYP.
55
55
17
MAX.
65
65
21
UNIT
V
V
V
V
BG
5
-
40
V
-
0.1
2.2
0.1
-
2
4
1
A
µA
mA
µA
-
-
-
28
36
150
38
48
-
mΩ
mΩ
INPUT CHARACTERISTICS
T
mb
= 25 ˚C; V
BG
= 13 V
SYMBOL
I
I
V
IG
V
IG(ON)
V
IG(OFF)
PARAMETER
Input current
Input clamping voltage
Input turn-on threshold voltage
Input turn-off threshold voltage
CONDITIONS
V
IG
= 5 V
I
I
= 200
µA
MIN.
35
6
-
1.5
TYP.
60
7.5
2.1
2
MAX.
100
8.5
2.7
-
UNIT
µA
V
V
V
1
On-state resistance is increased if the supply voltage is less than 9 V. Refer to figure 8.
2
Defined as in ISO 10483-1.
3
This is the continuous current drawn from the supply when the input is low and includes leakage current to the load.
4
This is the continuous current drawn from the supply with no load connected, but with the input high.
5
The measured current is in the load pin only.
6
The supply and input voltage for the R
ON
tests are continuous. The specified pulse duration t
p
refers only to the applied load current.
April 1995
3
Rev 1.100
Philips Semiconductors
Product specification
PowerMOS transistor
TOPFET high side switch
PROTECTION FUNCTIONS AND STATUS INDICATIONS
Truth table for normal, open-circuit load and overload conditions and abnormal supply voltages.
FUNCTIONS
SYMBOL
CONDITION
Normal on-state
Normal off-state
I
L(OC)
Open circuit load
1
Open circuit load
T
j(TO)
Over temperature
2
Over temperature
3
V
BL(TO)
Short circuit load
4
Short circuit load
V
BG(TO)
V
BG(LP)
Low supply voltage
5
High supply voltage
6
INPUT
1
0
1
0
1
0
1
0
X
X
TRUTH TABLE
STATUS
1
1
0
1
0
0
0
1
1
1
OUTPUT
1
0
1
0
0
0
0
0
0
0
3
40
4
45
9
150
150
BUK202-50Y
THRESHOLD
MIN.
TYP.
MAX.
UNIT
450
750
mA
175
-
˚C
10.5
12
V
5
50
V
V
For input ‘0’ equals low, ‘1’ equals high, ‘X’ equals don’t care.
For status ‘0’ equals low, ‘1’ equals open or high.
For output switch ‘0’ equals off, ‘1’ equals on.
STATUS CHARACTERISTICS
T
mb
= 25 ˚C.
The status output is an open drain transistor, and requires an external pull-up circuit to indicate a logic high.
SYMBOL
V
SG
V
SG
I
S
I
S
PARAMETER
Status clamping voltage
Status low voltage
Status leakage current
Status saturation current
7
Application information
R
S
External pull-up resistor
8
V
SS
= 5 V
-
100
-
kΩ
CONDITIONS
I
S
= 100
µA;
V
IG
= 0 V
I
S
= 50
µA;
V
BG
= 13 V; V
IG
= 5 V
V
SG
= 5 V
V
SS
= 5 V; R
S
= 0
Ω;
V
BG
= 13 V
MIN.
6
-
-
-
TYP.
7
0.7
0.1
5
MAX.
8
0.8
1
-
UNIT
V
V
µA
mA
1
In the on-state, the switch detects whether the load current is less than the quoted open load threshold current. This is for status indication
only. Typical hysteresis equals 230 mA. The thresholds are specified for supply voltage within the normal working range.
2
After cooling below the reset temperature the switch will resume normal operation. The reset temperature is lower than the trip temperature by
typically 10 ˚C.
3
If the overtemperature protection has operated, status remains low to indicate the overtemperature condition even if the input is taken low,
providing the device has not cooled below the reset temperature.
4
After short circuit protection has operated, the input voltage must be toggled low for the switch to resume normal operation.
5
Undervoltage sensor causes the device to switch off. Typical hysteresis equals 0.5 V.
6
Overvoltage sensor causes the device to switch off. Typical hysteresis equals 1.3 V.
7
In a fault condition with the pull-up resistor short circuited while the status transistor is conducting.
8
The pull-up resistor also protects the status pin during reverse battery conditions.
April 1995
4
Rev 1.100
Lei Jun lost the 1 billion bet with Dong Mingzhu. It seems that the typhoon still can't blow up the pigs.
[color=#000][font=-apple-system-font, "][size=19px]Xiaomi Group announced its 2018 annual report on the 19th: Xiaomi achieved revenue of 174.915 billion yuan. So far, the five-year, billion-dollar bet...
高进 Talking
Please tell me what warming means
After my code is compiled, a warming occurs, and the content is as follows: Warning: LATCH primitive "ether_mac:ether_mac|ethermac_recv:recv|fsm_ram_wr_ns.RECV_PRENUM_7327" is permanently enabled. Exc...
zgm1193 FPGA/CPLD
Infrared decoding LPC214X
I saw the following infrared code structure in a tutorial. I don't understand how the 1.125ms period representing 0 is converted into 0x109c0? How is the 2.25ms period representing 1 converted into 0x...
tekkon MCU
The pad is 0.3mm/center distance is 0.5mm and the wire cannot come out
In this case, I wonder how you guys route the wires? I used padless vias with inner and outer diameters of 0.3mm, and routed them from the bottom layer. Now I have a problem, some power vias cannot be...
yangxf1217 PCB Design
Switching Power Supply Design Series 2 - "EMI Suppression"
[font=微软雅黑][size=3]Following [url=https://www.eeworld.com.cn/training/2014/TI_power_0213/383.html]《Switching Power Supply Design: PCB Thermal Management》[/url], Daxuetang has launched another practica...
linjiang Analogue and Mixed Signal
MicroPython will be upgraded to 1.9.1
MicroPython will be upgraded to 1.9.1 to fix the USB bug on Win10....
dcexpert MicroPython Open Source section

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 87  1554  1730  2717  2087  2  32  35  55  43 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号