APT904R2GN datasheet, PDF - EEWORLD Datasheet

APT904R2GN: DescriptionTRANSISTOR,MOSFET,N-CHANNEL,900V V(BR)DSS,3A I(D),TO-257ISO; CategoryDiscrete semiconductor The transistor; File Size442KB，4 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com

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APT904R2GN Overview

TRANSISTOR,MOSFET,N-CHANNEL,900V V(BR)DSS,3A I(D),TO-257ISO

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Microsemi
package instruction	,
Reach Compliance Code	unknown
Configuration	Single
Maximum drain current (Abs) (ID)	3 A
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-609 code	e0
Operating mode	ENHANCEMENT MODE
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	100 W
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)

	APT904R2GN	APT904RGN
Description	TRANSISTOR,MOSFET,N-CHANNEL,900V V(BR)DSS,3A I(D),TO-257ISO	TRANSISTOR,MOSFET,N-CHANNEL,900V V(BR)DSS,3.3A I(D),TO-257ISO
Is it Rohs certified?	incompatible	incompatible
Maker	Microsemi	Microsemi
Reach Compliance Code	unknown	unknown
Configuration	Single	Single
Maximum drain current (Abs) (ID)	3 A	3.3 A
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-609 code	e0	e0
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	100 W	100 W
surface mount	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)

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