EM565161BA-55G datasheet, PDF - EEWORLD Datasheet

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EM565161BA-55G: DescriptionSRAM; Categorystorage storage; File Size239KB，13 Pages; ManufacturerEtron; Websitehttp://www.etron.com/

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EM565161BA-55G Overview

SRAM

EM565161BA-55G Parametric

Parameter Name	Attribute value
Maker	Etron
package instruction	,
Reach Compliance Code	compliant

EM565161BA-55G Preview

EtronTech

Features

•

Single Power Supply Voltage, 3.0 ~ 3.6 V

•

Power Down Features Using CE1#, CE2, LB# and

UB#

•

Low Power Dissipation

•

Data retention Supply Voltage: 1.5V to 3.6V

•

Direct TTL Compatibility for All Input and Output

•

Wide Operating Temperature Range: -40°C to 85°C

•

Standby current (maximum) @ VDD = 3.6 V

•

Lead Free Package available

EM565161

512K x 16 Low Power SRAM

Preliminary, Rev 1.2 Dec/2007

Pin Assignment

48-Ball BGA (CSP), Top View

LB#

OE#

CE2

DQ8

UB#

CE1#

DQ0

DQ9

DQ10

DQ1

DQ2

GND

DQ11

A17

DQ3

VDD

Ordering Information

Part Number

EM565161BJ-70/-70G

EM565161BA-70/-70G

EM565161BJ-55/-55G

EM565161BA-55/-55G

G : indicates Lead Free Package

VDD

DQ12

GND

A16

DQ4

GND

Spee

70 ns

55 ns

DDS2

Package

µA

6x9 BGA

8x10 BGA

6x9 BGA

8x10 BGA

A18

A10

A11

DQ15

A12

A13

WE#

DQ7

DQ14

DQ13

A14

A15

DQ5

DQ6

Pin Names

Symbol

A0 – A18

DQ0-DQ15

CE1#,CE2

OE#

WE#

LB#,UB#

GND

Function

Address Inputs

Data Inputs/Outputs

Chip Enable Input

Output Enable

Read/Write Control Input

Data Byte Control Inputs

Ground

Power Supply

No Connection

Overview

The EM565161 is an 8M-bit SRAM organized as 512K words by 16 bits. It is designed with advanced CMOS

technology. This Device operates from a single power supply. Advanced circuit technology provides both high

speed and low power. It is automatically placed in low-power mode when CE1# or both UB# and LB# are

asserted high or CE2 is asserted low. There are three control inputs. CE1# and CE2 are used to select the

device and for data retention control, and output enable (OE#) provides fast memory access. Data byte control

pin (LB#,UB#) provides lower and upper byte access. This device is well suited to various microprocessor

system applications where high speed, low power and battery backup are required. And, with a guaranteed

operating range from –40°C to 85°C, the EM565161 can be used in environments exhibiting extreme

temperature conditions.

Etron Technology, Inc.

No. 6, Technology Rd. V, Science-Based Industrial Park, Hsinchu, Taiwan 30077, R.O.C.

TEL: (886)-3-5782345

FAX: (886)-3-5778671

Etron Technology, Inc., reserves the right to make changes to its products and specifications without notice.

EtronTech

Block Diagram

EM565161

MEMORY

CELL ARRAY

512kx16

A18

VDD

GND

DQ0

DQ1

DQ2

DQ3

DQ4

DQ5

DQ6

DQ7

SENSE AMP

DQ8

DQ9

DQ10

DQ11

DQ12

DQ13

DQ14

DQ15

COLUMN ADDRESS

DECODER

WE#

UB#

LB#

OE#

CE1#

CE2

POWER DOWN

CIRCUIT

Preliminary

Rev 1.2

Dec. 2007

EtronTech

Operating Mode

Mode

CE1# CE2

OE# WE#

LB#

Read

Write

Output Disabled

Standby

High-Z

UB#

DQ0~DQ7

DOUT

High-Z

DOUT

DIN

High-Z

DIN

High-Z

EM565161

DQ8~DQ15

DOUT

High-Z

DIN

High-Z

Power

IDDO

High-Z

IDDS

Note:X=don’t care. H=logic high. L=logic low.

Absolute Maximum Ratings

Supply voltage, VDD

Input voltages, VIN

Input and output voltages, VI/O

Operating temperature, TOPR

Storage temperature, TSTRG

Soldering Temperature (10s), TSOLDER

Power dissipation, PD

-0.3 to +4.6V

-0.5 to VDD +0.5V

-40 to +85°C

-55 to +150°C

260°C

Preliminary

Rev 1.2

Dec. 2007

EtronTech

DC Recommended Operating Conditions (Ta=-40°C to 85°C)

Symbol

VDD

VIH

VIL

Parameter

Power Supply Voltage

Input High Voltage

Input Low Voltage

Min

3.0

2.2

-0.3

(2)

EM565161

Max

3.6

VDD + 0.3

0.6

3.6

(1)

Unit

VDR

Data Retention Supply Voltage

Note:

(1) Overshoot : VDD +2.0V in case of pulse width

≤

20ns

(2) Undershoot : -2.0V in case of pulse width

≤

20ns

1.0

DC Characteristics (Ta = -40°C to 85°C, VDD = 3.0V to 3.6V)

Parameter

Input low current

Output low voltage

Output high voltage

Operating current

Symbol

IIL

VOL

VOH

IDD1

IDD2

Test Conditions

IIN = 0V to VDD

IOL = 2.1 mA

IOH = -1.0 mA

CE1# = VIL and

CE2 = VIH and

IOUT = 0mA

Other Input = VIH / VIL

CE1# = VDD – 0.2V or

Standby current

IDDS2

UB# and LB# = VDD-0.2V

or CE2 = 0.2V

-70

−

Cycle time = min

Min

-1

−

VDD

–

0.15

−

Max

0.4

−

Cycle time = 1µs

Unit

µA

-55

−

µA

Capacitance (Ta = 25°C; f = 1 MHz)

Parameter

Input capacitance

Input/Output capacitance

Symbol

CIN

CIO

Min

−

Max

Unit

Test Conditions

VIN = GND

VIO = GND

Notes:

This parameter is periodically sampled and is not 100% tested.

Preliminary

Rev 1.2

Dec. 2007

EtronTech

Read Cycle

EM565161

AC Characteristics and Operating Conditions (Ta = -40°C to 85°C, VDD = 3.0V to 3.6V)

EM565161

Symbol

tRC

tAA

tCO1

tCO2

tOE

tBA

tLZ

tOLZ

tBLZ

tHZ

tOHZ

tBHZ

tOH

Write Cycle

EM565161

Symbol

tWC

tWP

tCW

tBW

tAS

tWR

tWHZ

tOW

tDS

tDH

Write cycle time

Write pulse width

Chip Enable to end of write

Data Byte Control to end of Write

Address setup time

Write Recovery time

WE# Low to Output in High-Z

WE# High to Output in Low-Z

Data Setup Time

Data Hold Time

Parameter

Min

−

-55

Max

−

Min

−

-70

Max

−

Unit

Read cycle time

Address access time

Chip Enable (CE1#) Access Time

Chip Enable (CE2) Access Time

Output enable access time

Data Byte Control Access Time

Chip Enable Low to Output in Low-Z

Output enable Low to Output in Low-Z

Data Byte Control Low to Output in Low-Z

Chip Enable High to Output in High-Z

Output Enable High to Output in High-Z

Data Byte Control High to Output in High-Z

Output Data Hold Time

Parameter

Min

−

-55

Max

−

Min

−

-70

Max

−

Unit

AC Test Condition

•

Output load : 60pF + one TTL gate

•

Input pulse level : 0.4V, 2.4V

•

Timing measurements : 0.5 x V

•

tR, tF : 5ns

Preliminary

Rev 1.2

Dec. 2007

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EM565161BA-55G Related Products

	EM565161BA-55G	EM565161BA-70G
Description	SRAM	SRAM
Maker	Etron	Etron
Reach Compliance Code	compliant	compliant

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