EtronTech
Features
•
Single Power Supply Voltage, 3.0 ~ 3.6 V
•
Power Down Features Using CE1#, CE2, LB# and
UB#
•
Low Power Dissipation
•
Data retention Supply Voltage: 1.5V to 3.6V
•
Direct TTL Compatibility for All Input and Output
•
Wide Operating Temperature Range: -40°C to 85°C
•
Standby current (maximum) @ VDD = 3.6 V
•
Lead Free Package available
EM565161
512K x 16 Low Power SRAM
Preliminary, Rev 1.2 Dec/2007
Pin Assignment
48-Ball BGA (CSP), Top View
1
A
LB#
2
OE#
3
A0
4
A1
5
A2
6
CE2
B
DQ8
UB#
A3
A4
CE1#
DQ0
C
DQ9
DQ10
A5
A6
DQ1
DQ2
D
GND
DQ11
A17
A7
DQ3
VDD
Ordering Information
Part Number
EM565161BJ-70/-70G
EM565161BA-70/-70G
EM565161BJ-55/-55G
EM565161BA-55/-55G
G : indicates Lead Free Package
E
VDD
DQ12
GND
A16
DQ4
GND
Spee
d
70 ns
70 ns
55 ns
55 ns
I
DDS2
Package
35
µA
35
µA
35
µA
35
µA
6x9 BGA
8x10 BGA
6x9 BGA
8x10 BGA
H
A18
A8
A9
A10
A11
NC
G
DQ15
NC
A12
A13
WE#
DQ7
F
DQ14
DQ13
A14
A15
DQ5
DQ6
Pin Names
Symbol
A0 – A18
DQ0-DQ15
CE1#,CE2
OE#
WE#
LB#,UB#
GND
V
DD
NC
Function
Address Inputs
Data Inputs/Outputs
Chip Enable Input
Output Enable
Read/Write Control Input
Data Byte Control Inputs
Ground
Power Supply
No Connection
Overview
The EM565161 is an 8M-bit SRAM organized as 512K words by 16 bits. It is designed with advanced CMOS
technology. This Device operates from a single power supply. Advanced circuit technology provides both high
speed and low power. It is automatically placed in low-power mode when CE1# or both UB# and LB# are
asserted high or CE2 is asserted low. There are three control inputs. CE1# and CE2 are used to select the
device and for data retention control, and output enable (OE#) provides fast memory access. Data byte control
pin (LB#,UB#) provides lower and upper byte access. This device is well suited to various microprocessor
system applications where high speed, low power and battery backup are required. And, with a guaranteed
operating range from –40°C to 85°C, the EM565161 can be used in environments exhibiting extreme
temperature conditions.
Etron Technology, Inc.
No. 6, Technology Rd. V, Science-Based Industrial Park, Hsinchu, Taiwan 30077, R.O.C.
TEL: (886)-3-5782345
FAX: (886)-3-5778671
Etron Technology, Inc., reserves the right to make changes to its products and specifications without notice.
EtronTech
Block Diagram
EM565161
A0
MEMORY
CELL ARRAY
512kx16
A18
VDD
GND
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
SENSE AMP
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
COLUMN ADDRESS
DECODER
WE#
UB#
LB#
OE#
CE1#
CE2
POWER DOWN
CIRCUIT
Preliminary
2
Rev 1.2
Dec. 2007
EtronTech
Operating Mode
Mode
CE1# CE2
OE# WE#
LB#
L
Read
L
H
L
H
H
L
L
Write
L
H
X
L
H
L
L
Output Disabled
L
H
Standby
X
X
H
X
L
X
X
X
X
X
X
X
X
X
H
X
X
H
H
X
X
H
High-Z
High-Z
H
H
H
X
UB#
L
L
H
L
L
H
X
DQ0~DQ7
DOUT
High-Z
DOUT
DIN
High-Z
DIN
High-Z
EM565161
DQ8~DQ15
DOUT
DOUT
High-Z
DIN
DIN
High-Z
High-Z
High-Z
Power
IDDO
IDDO
IDDO
IDDO
IDDO
IDDO
IDDO
IDDO
High-Z
IDDS
Note:X=don’t care. H=logic high. L=logic low.
Absolute Maximum Ratings
Supply voltage, VDD
Input voltages, VIN
Input and output voltages, VI/O
Operating temperature, TOPR
Storage temperature, TSTRG
Soldering Temperature (10s), TSOLDER
Power dissipation, PD
-0.3 to +4.6V
-0.3 to +4.6V
-0.5 to VDD +0.5V
-40 to +85°C
-55 to +150°C
260°C
1W
Preliminary
3
Rev 1.2
Dec. 2007
EtronTech
DC Recommended Operating Conditions (Ta=-40°C to 85°C)
Symbol
VDD
VIH
VIL
Parameter
Power Supply Voltage
Input High Voltage
Input Low Voltage
Min
3.0
2.2
-0.3
(2)
EM565161
Max
3.6
VDD + 0.3
0.6
3.6
(1)
Unit
V
VDR
Data Retention Supply Voltage
Note:
(1) Overshoot : VDD +2.0V in case of pulse width
≤
20ns
(2) Undershoot : -2.0V in case of pulse width
≤
20ns
1.0
DC Characteristics (Ta = -40°C to 85°C, VDD = 3.0V to 3.6V)
Parameter
Input low current
Output low voltage
Output high voltage
Operating current
Symbol
IIL
VOL
VOH
IDD1
IDD2
Test Conditions
IIN = 0V to VDD
IOL = 2.1 mA
IOH = -1.0 mA
CE1# = VIL and
CE2 = VIH and
IOUT = 0mA
Other Input = VIH / VIL
CE1# = VDD – 0.2V or
Standby current
IDDS2
UB# and LB# = VDD-0.2V
or CE2 = 0.2V
-70
−
35
Cycle time = min
Min
-1
−
VDD
–
0.15
−
−
Max
1
0.4
−
35
mA
Cycle time = 1µs
5
Unit
µA
V
V
-55
−
35
µA
Capacitance (Ta = 25°C; f = 1 MHz)
Parameter
Input capacitance
Input/Output capacitance
Symbol
CIN
CIO
Min
−
−
Max
8
10
Unit
pF
pF
Test Conditions
VIN = GND
VIO = GND
Notes:
This parameter is periodically sampled and is not 100% tested.
Preliminary
4
Rev 1.2
Dec. 2007
EtronTech
Read Cycle
EM565161
AC Characteristics and Operating Conditions (Ta = -40°C to 85°C, VDD = 3.0V to 3.6V)
EM565161
Symbol
tRC
tAA
tCO1
tCO2
tOE
tBA
tLZ
tOLZ
tBLZ
tHZ
tOHZ
tBHZ
tOH
Write Cycle
EM565161
Symbol
tWC
tWP
tCW
tBW
tAS
tWR
tWHZ
tOW
tDS
tDH
Write cycle time
Write pulse width
Chip Enable to end of write
Data Byte Control to end of Write
Address setup time
Write Recovery time
WE# Low to Output in High-Z
WE# High to Output in Low-Z
Data Setup Time
Data Hold Time
Parameter
Min
55
45
45
45
0
0
−
5
25
0
-55
Max
−
−
−
−
−
−
20
−
−
−
Min
70
55
60
60
0
0
−
5
30
0
-70
Max
−
−
−
−
−
−
20
−
−
−
ns
Unit
Read cycle time
Address access time
Chip Enable (CE1#) Access Time
Chip Enable (CE2) Access Time
Output enable access time
Data Byte Control Access Time
Chip Enable Low to Output in Low-Z
Output enable Low to Output in Low-Z
Data Byte Control Low to Output in Low-Z
Chip Enable High to Output in High-Z
Output Enable High to Output in High-Z
Data Byte Control High to Output in High-Z
Output Data Hold Time
Parameter
Min
55
−
−
−
−
−
10
5
10
−
−
−
0
-55
Max
−
55
55
55
25
55
−
−
−
20
20
20
−
Min
70
−
−
−
−
−
10
5
10
−
−
−
0
-70
Max
−
70
70
70
35
70
−
−
−
25
25
25
−
ns
Unit
AC Test Condition
•
Output load : 60pF + one TTL gate
•
Input pulse level : 0.4V, 2.4V
•
Timing measurements : 0.5 x V
DD
•
tR, tF : 5ns
Preliminary
5
Rev 1.2
Dec. 2007
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